Abstract: A method for enhancing charge carrier mobility of a field-effect transistor device. The method comprises generating uniaxial nanogrooves on a substrate and blade coating a solution comprising a semiconducting polymer onto the substrate. The polymer solution is spread onto the substrate in a direction parallel to the nanogrooves and a main-chain axis of the polymer is parallel to the nanogrooves. The semiconducting polymer can be then annealed, so that a polymer film is formed which is layered on top of the substrate, with polymer chains aligned parallel to a direction of charge carrier movement.

Abstract: One or more embodiments of the present invention report here a comparative study of field effect transistors (FETs) fabricated with semiconducting polymer PBT, regioregular semiconducting polymers, PCDTPT and their fluorinated analogue (P2F, PCDTFBT), in the transistor channel. The present invention shows that simple fluorination of PBT and PCDTPT to PCDTFBT leads to air-stability and reliable transistor characteristics. The FETs fabricated from aligned PCDTFBT yielded stable threshold voltages (at zero volt) and a narrow distribution of saturation hole mobilities of 65 cm2 V?1 s?1 (average over 50 independent FET devices). At higher source-drain voltage (higher electric field in the channel) the mobility approaches 100 cm2 V?1 s?1, the highest value for semiconducting polymers reported to date. High mobility is retained over 150 hours in ambient air without any encapsulation layers.

Abstract: Embodiments of the invention include methods and materials for preparing organic semiconducting layers, for example one used in an organic semiconductor device including a substrate with a nanostructured surface and a polymeric semiconductor film overlying the nanostructured surface. Aspects of the invention use capillary action to modulate polymer chain self-assembly on a surface and unidirectional alignment at a critical buried interface where charge carriers migrate between a dielectric and the polymer. By controlling the properties of the surfaces upon which polymers are disposed, artisans can enhance the transistor saturated mobilities of conjugated polymers.

Abstract: A method for enhancing charge carrier mobility of a field-effect transistor device. The method comprises generating uniaxial nanogrooves on a substrate and blade coating a solution comprising a semiconducting polymer onto the substrate. The polymer solution is spread onto the substrate in a direction parallel to the nanogrooves and a main-chain axis of the polymer is parallel to the nanogrooves. The semiconducting polymer can be then annealed, so that a polymer film is formed which is layered on top of the substrate, with polymer chains aligned parallel to a direction of charge carrier movement.

Abstract: Embodiments of the invention include methods and materials for preparing organic semiconducting layers, for example one used in an organic semiconductor device including a substrate with a nanostructured surface and a polymeric semiconductor film overlying the nanostructured surface. Aspects of the invention use capillary action to modulate polymer chain self-assembly on a surface and unidirectional alignment at a critical buried interface where charge carriers migrate between a dielectric and the polymer. By controlling the properties of the surfaces upon which polymers are disposed, artisans can enhance the transistor saturated mobilities of conjugated polymers.

Abstract: A method of fabricating a thin-film transistor on an insulation substrate. A gate and a gate line are formed on the insulation substrate. A gate dielectric layer, a silicon layer, a doped silicon layer and a conductive layer are formed over the insulation substrate. The conductive layer and the doped silicon layer are patterned to form a source/drain line, while the conductive layer and the doped silicon layer on the gate remain. A transparent conductive layer is formed over the insulation substrate. The transparent conductive layer, the conductive layer and the doped silicon layer are patterned to respectively form a pixel electrode, a source/drain conductive layer and a source/drain region. A protection layer is then formed over the insulation layer. The protection layer is patterned to expose the pixel electrode. The method of fabricating the thin-film transistor can be applied to fabrication of fax machine, CIS such as scanner and various electronic devices.