Patents by Inventor Chan Mook Lim
Chan Mook Lim has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 9548422Abstract: A semiconductor light emitting device includes a light emitting structure and first and second electrodes. The light emitting structure includes first and second conductivity type semiconductor layers and an active layer interposed therebetween. The first and second electrodes are electrically connected to the first and second conductivity type semiconductor layers. The second electrode includes a current blocking layer, a reflective part disposed on the current blocking layer, a transparent electrode layer disposed on the second conductivity type semiconductor layer, a pad electrode part disposed within a region of the current blocking layer, and at least one finger electrode part disposed at least in part on the transparent electrode layer. The transparent electrode layer can be spaced apart from the reflective part, and have an opening surrounding the reflective part. In some examples, the transparent electrode layer can further be spaced apart from the current blocking layer.Type: GrantFiled: August 7, 2014Date of Patent: January 17, 2017Assignee: SAMSUNG ELECTRONICS CO., LTD.Inventors: Tae Hun Kim, Ki Seok Kim, Chan Mook Lim, Tae Kang Kim
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Patent number: 9548426Abstract: A semiconductor light-emitting device includes a light-emitting structure including a first conductivity-type semiconductor layer, an active layer, and a second conductivity-type semiconductor layer, and a selective transmission-reflection layer disposed on the light-emitting structure and including a plurality of dielectric layers having different optical thicknesses alternately stacked at least once. The sum of an optical thickness of a dielectric layer having a maximum optical thickness and an optical thickness of a dielectric layer having a minimum optical thickness is in the range of 0.75 to 0.80.Type: GrantFiled: May 22, 2015Date of Patent: January 17, 2017Assignee: SAMSUNG ELECTRONICS CO., LTD.Inventors: Myeong Ha Kim, Chan Mook Lim, Masaaki Sofue, Sang Yeob Song, Mi Jeong Yun
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Publication number: 20170005242Abstract: A semiconductor light emitting device may include a substrate having a first surface and a second surface, the second surface being opposite to the first surface; a light emitting structure disposed on the first surface of the substrate and including a first conductivity-type semiconductor layer, an active layer and a second conductivity-type semiconductor layer; and a reflector disposed on the second surface of the substrate and including a low refractive index layer and a Bragg layer, wherein the Bragg layer includes a plurality of alternately stacked layers having different refractive indices, and wherein a refractive index of the low refractive index layer is lower than a refractive index of the Bragg layer.Type: ApplicationFiled: April 26, 2016Publication date: January 5, 2017Applicant: SAMSUNG ELECTRONICS CO., LTD.Inventors: Myeong Ha KIM, Sang Yeob SONG, Chan Mook LIM
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Publication number: 20160351754Abstract: A semiconductor light-emitting device having improved light extraction efficiency provided by a reflector including a separation layer. The separation layer may be interposed between first and second Bragg layers including one or more pairs of refractive layers having different refractive indices, the first pairs being stacked on one side of the separation layer and the second pairs being stacked on an opposing side of the separation layer.Type: ApplicationFiled: April 4, 2016Publication date: December 1, 2016Inventors: Myeong Ha KIM, Chan Mook LIM
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Patent number: 9484500Abstract: A semiconductor light emitting device and method of manufacturing the semiconductor light emitting device are provided. The semiconductor light emitting device includes a light emitting structure including a first conductivity type semiconductor layer, an active layer, and a second conductivity type semiconductor layer. The device may also includes a first electrode connected to the first conductivity type semiconductor layer, and a second electrode connected to the second conductivity type semiconductor layer and having a pad region and a finger region extended from the pad region in one direction.Type: GrantFiled: June 10, 2014Date of Patent: November 1, 2016Assignee: SAMSUNG ELECTRONICS CO., LTD.Inventors: Ki Seok Kim, Sang Seok Lee, Su Yeol Lee, Chan Mook Lim
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Patent number: 9300111Abstract: A semiconductor light emitting device includes a conductive substrate, a light emitting laminate including a second conductivity type semiconductor layer, an active layer, and a first conductivity type semiconductor layer stacked on the conductive substrate, a first electrode layer electrically connected to the first conductivity type semiconductor layer, a second electrode layer between the conductive substrate and the second conductivity type semiconductor layer, the second electrode layer being electrically connected to the second conductivity type semiconductor layer, and a passivation layer between the active layer and the second electrode layer, the passivation layer covering at least a lateral surface of the active layer of the light emitting laminate.Type: GrantFiled: January 14, 2014Date of Patent: March 29, 2016Assignee: SAMSUNG ELECTRONICS CO., LTD.Inventors: Jong Ho Lee, Chan Mook Lim, Young Chul Shin, Su Hyun Jo
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Publication number: 20160087159Abstract: A semiconductor light-emitting device includes a light-emitting structure including a first conductivity-type semiconductor layer, an active layer, and a second conductivity-type semiconductor layer, and a selective transmission-reflection layer disposed on the light-emitting structure and including a plurality of dielectric layers having different optical thicknesses alternately stacked at least once. The sum of an optical thickness of a dielectric layer having a maximum optical thickness and an optical thickness of a dielectric layer having a minimum optical thickness is in the range of 0.75 to 0.80.Type: ApplicationFiled: May 22, 2015Publication date: March 24, 2016Inventors: Myeong Ha KIM, Chan Mook LIM, Masaaki SOFUE, Sang Yeob SONG, Mi Jeong YUN
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Patent number: 9123623Abstract: A method of manufacturing a semiconductor light emitting device having a multi-cell array, including: sequentially forming a first conductive semiconductor layer, an active layer and a second conductive semiconductor layer on a substrate; etching and removing portions of the second conductive semiconductor layer and the active layer so as to expose portions of an upper surface of the first conductive semiconductor layer corresponding to respective regions of the second conductive semiconductor layer spaced apart from one another; and separating light emitting cells by partially etching the exposed portions of the first conductive semiconductor layer, wherein the separating of the light emitting cells is not performed at an edge portion of the substrate.Type: GrantFiled: July 2, 2013Date of Patent: September 1, 2015Assignee: SAMSUNG ELECTRONICS CO., LTD.Inventors: Su Hyun Jo, Jong Ho Lee, Jin Hyun Lee, Chan Mook Lim, Jin Hwan Kim
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Publication number: 20150108520Abstract: A semiconductor light emitting device includes a light emitting structure and first and second electrodes. The light emitting structure includes first and second conductivity type semiconductor layers and an active layer interposed therebetween. The first and second electrodes are electrically connected to the first and second conductivity type semiconductor layers. The second electrode includes a current blocking layer, a reflective part disposed on the current blocking layer, a transparent electrode layer disposed on the second conductivity type semiconductor layer, a pad electrode part disposed within a region of the current blocking layer, and at least one finger electrode part disposed at least in part on the transparent electrode layer. The transparent electrode layer can be spaced apart from the reflective part, and have an opening surrounding the reflective part. In some examples, the transparent electrode layer can further be spaced apart from the current blocking layer.Type: ApplicationFiled: August 7, 2014Publication date: April 23, 2015Inventors: Tae Hun KIM, Ki Seok KIM, Chan Mook LIM, Tae Kang KIM
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Publication number: 20150091041Abstract: A semiconductor light emitting device includes a substrate, a first structure, a second structure, first and second n-electrodes, and first and second p-electrodes. The first structure is disposed on the substrate and includes a first n-type semiconductor layer, a first active layer, and a first p-type semiconductor layer. The second structure is spaced apart from the first structure on the substrate and includes a second n-type semiconductor layer, a second active layer and a second p-type semiconductor layer. The first n-electrode and the first p-electrode are connected to the first n-type semiconductor layer and the first p-type semiconductor layer, respectively. The second n-electrode and the second p-electrode are connected to the second n-type semiconductor layer and the second p-type semiconductor layer, respectively. The second n-electrode is spaced apart from the second active layer to encompass the second active layer.Type: ApplicationFiled: August 7, 2014Publication date: April 2, 2015Inventors: Ju Heon YOON, Myeong Ha KIM, Chan Mook LIM, Joon Woo JEON, Jin Young CHOI
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Patent number: 8981396Abstract: A semiconductor light emitting device includes a substrate, a semiconductor laminate having a base semiconductor layer, a first conductivity-type semiconductor layer, an active layer, and a second conductivity-type semiconductor layer sequentially formed on the substrate and divided by an isolation region to provide a plurality of light emitting cells, an intermediate separation layer interposed between the base semiconductor layer and the first conductivity-type semiconductor layer, a plurality of first and second electrodes connected to the first and second conductivity-type semiconductor layers, respectively, of the plurality of light emitting cells, and a wiring unit connecting the first and second electrodes of different light emitting cells.Type: GrantFiled: February 19, 2013Date of Patent: March 17, 2015Assignee: Samsung Electronics Co., Ltd.Inventors: Jin Hyun Lee, Bum Joon Kim, Seung Wan Chae, Chan Mook Lim, Jong Ho Lee, Jin Hwan Kim, Su Hyun Jo
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Patent number: 8957431Abstract: A semiconductor light emitting device (LED) includes a first light emitting cell having a first plurality of electrodes. A second light emitting cell includes a second plurality of electrodes. The first and second light emitting cells are disposed on the substrate and are physically separated from each other. A first interconnection unit electrically connects the first plurality of electrodes to the second plurality of the electrodes.Type: GrantFiled: March 6, 2013Date of Patent: February 17, 2015Assignee: Samsung Electronics Co., Ltd.Inventors: Chan Mook Lim, Jong Ho Lee, Jin Hwan Kim, Young Chul Shin, Su Hyun Jo, Jin Hyun Lee
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Publication number: 20140367720Abstract: A semiconductor light emitting device and method of manufacturing the semiconductor light emitting device are provided. The semiconductor light emitting device includes a light emitting structure including a first conductivity type semiconductor layer, an active layer, and a second conductivity type semiconductor layer. The device may also includes a first electrode connected to the first conductivity type semiconductor layer, and a second electrode connected to the second conductivity type semiconductor layer and having a pad region and a finger region extended from the pad region in one direction.Type: ApplicationFiled: June 10, 2014Publication date: December 18, 2014Inventors: Ki Seok KIM, Sang Seok LEE, Su Yeol LEE, Chan Mook LIM
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Patent number: 8912726Abstract: Light emitting devices. A light emitting device including a power source; and a plurality of light emitting diode (LED) arrays coupled to the power source unit; and at least one delay unit. Each delay unit is coupled to a corresponding light emitting diode array of the light emitting diode arrays.Type: GrantFiled: March 7, 2013Date of Patent: December 16, 2014Assignee: Samsung Electronics Co., Ltd.Inventors: Jong Ho Lee, Sung Tae Kim, Chan Mook Lim, Jin Hwan Kim
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Patent number: 8901581Abstract: A semiconductor light emitting device includes a substrate and a plurality of light emitting cells disposed on the substrate. Each light emitting cell includes first and second conductive semiconductor layers having an active layer formed therebetween, and first and second electrodes formed on the first and second layers. A first insulation layer is formed on portions of the light emitting cell, while a second insulation layer entirely covers at least one light emitting cell. A method of manufacturing the semiconductor light emitting device, and a light emitting module and an illumination apparatus including the semiconductor light emitting device are also provided.Type: GrantFiled: May 15, 2013Date of Patent: December 2, 2014Assignee: Samsung Electronics Co., Ltd.Inventors: Chan Mook Lim, Jong Ho Lee, Jin Hwan Kim, Jin Hyun Lee, Su Hyun Jo, Hae Yeon Hwang
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Publication number: 20140217355Abstract: A semiconductor light emitting device includes: a semiconductor laminate having first and second conductivity type semiconductor layers and an active layer formed between the first and second conductivity type semiconductor layers; first and second electrodes connected to the first and second conductivity type semiconductor layers, respectively; and a micro-pattern formed on a light emitting surface from which light generated from the active layer is output, wherein a section of the micro-pattern parallel to the light emitting surface has a polygonal shape.Type: ApplicationFiled: February 5, 2013Publication date: August 7, 2014Applicants: SAMSUNG ELECTRONICS CO., LTD.Inventors: Gi Bum KIM, Ming MA, Ahmed NOEMAUN, E. Fred SCHUBERT, Jae-Hee CHO, Cheol Soo SONE, Sung Tae KIM, Chan Mook LIM
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Publication number: 20140219304Abstract: A semiconductor light emitting device includes a conductive substrate, a light emitting laminate including a second conductivity type semiconductor layer, an active layer, and a first conductivity type semiconductor layer stacked on the conductive substrate, a first electrode layer electrically connected to the first conductivity type semiconductor layer, a second electrode layer between the conductive substrate and the second conductivity type semiconductor layer, the second electrode layer being electrically connected to the second conductivity type semiconductor layer, and a passivation layer between the active layer and the second electrode layer, the passivation layer covering at least a lateral surface of the active layer of the light emitting laminate.Type: ApplicationFiled: January 14, 2014Publication date: August 7, 2014Applicant: SAMSUNG ELECTRONICS CO., LTD.Inventors: Jong Ho LEE, Chan Mook LIM, Young Chul SHIN, Su Hyun JO
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Publication number: 20140008665Abstract: A method of manufacturing a semiconductor light emitting device having a multi-cell array, including: sequentially forming a first conductive semiconductor layer, an active layer and a second conductive semiconductor layer on a substrate; etching and removing portions of the second conductive semiconductor layer and the active layer so as to expose portions of an upper surface of the first conductive semiconductor layer corresponding to respective regions of the second conductive semiconductor layer spaced apart from one another; and separating light emitting cells by partially etching the exposed portions of the first conductive semiconductor layer, wherein the separating of the light emitting cells is not performed at an edge portion of the substrate.Type: ApplicationFiled: July 2, 2013Publication date: January 9, 2014Inventors: Su Hyun JO, Jong Ho LEE, Jin Hyun LEE, Chan Mook LIM, Jin Hwan KIM
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Publication number: 20130313986Abstract: A light emitting apparatus includes a power supply providing power having a predetermined frequency, a plurality of light emitting diode arrays, and at least one frequency converter. The light emitting diode arrays are electrically connected to the power supply and respectively have an array structure in which at least one or more light emitting diodes are connected to one another in series. The at least one frequency converter is connected to both ends of the power supply, and configured to modulate a frequency of the power provided from the power supply and provide a modulated electrical signal to at least one of the plurality of light emitting diode arrays.Type: ApplicationFiled: May 22, 2013Publication date: November 28, 2013Applicant: SAMSUNG ELECTRONICS CO., LTD.Inventors: Je Won KIM, Sung Tae KIM, Chan Mook LIM
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Publication number: 20130306997Abstract: A semiconductor light emitting device includes a substrate and a plurality of light emitting cells disposed on the substrate. Each light emitting cell includes first and second conductive semiconductor layers having an active layer formed therebetween, and first and second electrodes formed on the first and second layers. A first insulation layer is formed on portions of the light emitting cell, while a second insulation layer entirely covers at least one light emitting cell. A method of manufacturing the semiconductor light emitting device, and a light emitting module and an illumination apparatus including the semiconductor light emitting device are also provided.Type: ApplicationFiled: May 15, 2013Publication date: November 21, 2013Applicant: SAMSUNG ELECTRONICS CO., LTD.Inventors: Chan Mook LIM, Jong Ho LEE, Jin Hwan KIM, Jin Hyun LEE, Su Hyun JO, Hae Yeon HWANG