Abstract: Methods of filling a feature with large grain tungsten include deposition of a tungsten carbon nitride (WCN) or tungsten nitride (WN) film that lines the feature. The WCN or WN film may be treated. It provides a template for subsequent growth of large grain tungsten. The top of the feature is treated with nitrogen to inhibit nucleation, facilitating bottom-up growth. In some embodiments, single grain tungsten is grown from the bottom up. Methods of at least partially filling a feature with single grain tungsten include treatment of the feature. In some embodiments, single grain tungsten is grown without a liner layer in the feature.

Abstract: A substrate processing system is provided and includes a substrate support, a memory, and calibration, operating parameter, and solving modules. The substrate support supports a substrate and includes temperature control elements. The memory stores, for the temperature control elements, temperature calibration values and sensitivity calibration values. The calibration module, during calibration of the temperature control elements, performs a first calibration process to determine the temperature calibration values or a second calibration process to determine the sensitivity calibration values. The sensitivity calibration values relate at least one of trim amounts or deposition amounts to temperature changes. The operating parameter module determines operating parameters for the temperature control elements based on the temperature and sensitivity calibration values.

Abstract: Methods and apparatuses for depositing thin films using long and short conversion times during alternating cycles of atomic layer deposition (ALD) are provided herein. Embodiments involve alternating conversion duration of an ALD cycle in one or more cycles of a multi-cycle ALD process. Some embodiments involve modulation of dose, purge, pressure, plasma power or plasma energy in two or more ALD cycles.

Abstract: A substrate processing system is provided and includes a substrate support, a memory, and calibration, operating parameter, and solving modules. The substrate support supports a substrate and includes temperature control elements. The memory stores, for the temperature control elements, temperature calibration values and sensitivity calibration values. The calibration module, during calibration of the temperature control elements, performs a first calibration process to determine the temperature calibration values or a second calibration process to determine the sensitivity calibration values. The sensitivity calibration values relate at least one of trim amounts or deposition amounts to temperature changes. The operating parameter module determines operating parameters for the temperature control elements based on the temperature and sensitivity calibration values.

Abstract: Methods and apparatuses for depositing thin films using long and short conversion times during alternating cycles of atomic layer deposition (ALD) are provided herein. Embodiments involve alternating conversion duration of an ALD cycle in one or more cycles of a multi-cycle ALD process. Some embodiments involve modulation of dose, purge, pressure, plasma power or plasma energy in two or more ALD cycles.

Abstract: Methods and apparatuses for depositing thin films using long and short conversion times during alternating cycles of atomic layer deposition (ALD) are provided herein. Embodiments involve alternating conversion duration of an ALD cycle in one or more cycles of a multi-cycle ALD process. Some embodiments involve modulation of dose, purge, pressure, plasma power or plasma energy in two or more ALD cycles.

Abstract: A substrate processing system is provided and includes a substrate support, a memory, and calibration, operating parameter, and solving modules. The substrate support supports a substrate and includes temperature control elements. The memory stores, for the temperature control elements, temperature calibration values and sensitivity calibration values. The calibration module, during calibration of the temperature control elements, performs a first calibration process to determine the temperature calibration values or a second calibration process to determine the sensitivity calibration values. The sensitivity calibration values relate at least one of trim amounts or deposition amounts to temperature changes. The operating parameter module determines operating parameters for the temperature control elements based on the temperature and sensitivity calibration values.