Abstract: A light emitting diode includes a first conductivity type semiconductor layer and a mesa disposed on the first conductivity type semiconductor layer wherein the mesa is a semiconductor stack including an active layer and a second conductivity type semiconductor layer; a ZnO layer disposed on the second conductivity type semiconductor layer; a lower insulation layer covering the ZnO layer and the mesa, and including an opening exposing the ZnO layer; a first pad metal layer disposed on the lower insulation layer, and electrically connected to the first conductivity type semiconductor layer; a second pad metal layer electrically connected to the ZnO layer through the opening of the lower insulation layer, and an upper insulation layer covering the first pad metal layer and the second pad metal layer.

Abstract: A light emitting device including a first light emitting part having a first area, a second light emitting part having a second area, and a third light emitting part having a third area, in which the first light emitting part is disposed on the same plane as the second light emitting part, the third light emitting part is disposed over the first and second light emitting parts, and the third area is larger than each of the first and second areas.

Abstract: A light emitting device including first, second, and third light emitting parts disposed one over another and each including a first-type semiconductor layer, an active layer, and a second-type semiconductor layer, a first conductive pattern at least partially disposed between the second and third light emitting parts, the first conductive pattern including a first portion electrically coupled with at least one of the first-type and second-type semiconductor layers of the first and second light emitting parts, and a second portion extending from the first portion and disposed on one surface of the second light emitting part between the second and third light emitting parts, and a second conductive pattern disposed on the third light emitting part and electrically coupled with the first conductive pattern, in which the second conductive pattern at least partially overlaps with the second portion of the first conductive pattern.

Abstract: A light emitting diode with a zinc oxide layer and a method of fabricating the same are disclosed. The light emitting diode includes: a light emitting structure including a gallium nitride based first conductivity type semiconductor layer, a gallium nitride based second conductivity type semiconductor layer, and an active layer interposed therebetween; and a ZnO transparent electrode layer disposed on the second conductivity type semiconductor layer, wherein the ZnO transparent electrode layer comprises a ZnO seed layer and a ZnO bulk layer formed on the ZnO seed layer, wherein the ZnO bulk layer is porous compared to the ZnO seed layer, wherein an interface between the ZnO seed layer and the second conductivity type semiconductor layer is flatter than an interface between the ZnO seed layer and the ZnO bulk layer, and wherein the interface between the ZnO seed layer and the ZnO bulk layer has an irregular concavo-convex shape.

Abstract: A light-emitting diode includes, a semiconductor stack including a first semiconductor layer, a second semiconductor layer, and an active layer. The light-emitting diode also includes a transparent conductive layer including a first transparent conductive layer disposed on the second semiconductor layer and a second transparent conductive layer disposed on the first transparent conductive layer. The second transparent conductive layer has a conductivity different than the first transparent conductive layer.

Abstract: A light-emitting electrode having a ZnO transparent electrode and a method for manufacturing the same are provided. A light-emitting element according to an embodiment comprises: a light-emitting structure comprising a first conductive semiconductor layer, an active layer, and a second conductive semiconductor layer; and a ZnO transparent electrode, which is positioned on the second conductive semiconductor layer, which makes an Ohmic contact with the second conductive semiconductor layer, and which comprises monocrystalline ZnO, wherein the diffraction angle of a peak of the ZnO transparent electrode, which results from X-ray diffraction (XRD) omega 2theta (?2?) scan, is in the range of ±1% with regard to the diffraction angle of a peak of the second conductive semiconductor layer, which results from XRD ?2? scan, and the FWHM of a main peak of the ZnO transparent electrode, which results from XRD omega (?) scan, is equal to or less than 900 arc sec.

Abstract: An exemplary light emitting diode is provided to comprise: a first semiconductor layer; a mesa disposed on the first semiconductor layer and including an active layer and a second semiconductor layer disposed on the active layer; a ZnO transparent electrode disposed on the mesa; a first electrode disposed on the first semiconductor layer; and a second electrode disposed on the ZnO transparent electrode, and including a second electrode pad and at least one second electrode extending portion extending from the second electrode pad. The second electrode extending portion contacts the ZnO transparent electrode. The ZnO transparent electrode includes a first region and a second region. The first region protrudes from the top surface of the ZnO transparent electrode, includes a plurality of projecting portions arranged in a predetermined pattern, the thickness of the first region greater than the thickness of the second region.

Abstract: A light-emitting electrode having a ZnO transparent electrode and a method for manufacturing the same are provided. A light-emitting element according to an embodiment comprises: a light-emitting structure comprising a first conductive semiconductor layer, an active layer, and a second conductive semiconductor layer; and a ZnO transparent electrode, which is positioned on the second conductive semiconductor layer, which makes an Ohmic contact with the second conductive semiconductor layer, and which comprises monocrystalline ZnO, wherein the diffraction angle of a peak of the ZnO transparent electrode, which results from X-ray diffraction (XRD) omega 2theta (?2?) scan, is in the range of ±1% with regard to the diffraction angle of a peak of the second conductive semiconductor layer, which results from XRD ?2? scan, and the FWHM of a main peak of the ZnO transparent electrode, which results from XRD omega (?) scan, is equal to or less than 900 arcsec.

Abstract: A light-emitting diode includes, a semiconductor stack including a first semiconductor layer, a second semiconductor layer, and an active layer. The light-emitting diode also includes a transparent conductive layer including a first transparent conductive layer disposed on the second semiconductor layer and a second transparent conductive layer disposed on the first transparent conductive layer. The second transparent conductive layer has a conductivity different than the first transparent conductive layer.

Abstract: A light-emitting diode includes, a semiconductor stack including a first semiconductor layer, a second semiconductor layer, and an active layer. The light-emitting diode also includes a transparent conductive layer including a first transparent conductive layer disposed on the second semiconductor layer and a second transparent conductive layer disposed on the first transparent conductive layer. The second transparent conductive layer has a conductivity different than the first transparent conductive layer.

Abstract: An exemplary light emitting diode is provided to comprise: a first semiconductor layer; a mesa disposed on the first semiconductor layer and including an active layer and a second semiconductor layer disposed on the active layer; a ZnO transparent electrode disposed on the mesa; a first electrode disposed on the first semiconductor layer; and a second electrode disposed on the ZnO transparent electrode, and including a second electrode pad and at least one second electrode extending portion extending from the second electrode pad. The second electrode extending portion contacts the ZnO transparent electrode. The ZnO transparent electrode includes a first region and a second region. The first region protrudes from the top surface of the ZnO transparent electrode, includes a plurality of projecting portions arranged in a predetermined pattern, the thickness of the first region greater than the thickness of the second region.

Abstract: Disclosed herein are a light emitting diode including a plurality of protrusions including zinc oxide and a method for manufacturing the same. According to an exemplary embodiment of the present disclosure, the light emitting diode includes: a substrate; a nitride light emitting structure disposed on the substrate; and a transparent electrode layer disposed on the nitride light emitting structure, wherein the transparent electrode layer includes a plurality of protrusions, the plurality of protrusions each have a lower portion and an upper portion, and a side of the lower portion and a side of the upper portion have different gradients.

Abstract: Disclosed herein are a light emitting diode including a plurality of protrusions including zinc oxide and a method for manufacturing the same. According to an exemplary embodiment of the present disclosure, the light emitting diode includes: a substrate; a nitride light emitting structure disposed on the substrate; and a transparent electrode layer disposed on the nitride light emitting structure, wherein the transparent electrode layer includes a plurality of protrusions, the plurality of protrusions each have a lower portion and an upper portion, and a side of the lower portion and a side of the upper portion have different gradients.

Abstract: Disclosed herein are a light emitting diode including a plurality of protrusions including zinc oxide and a method for manufacturing the same. According to an exemplary embodiment of the present disclosure, the light emitting diode includes: a substrate; a nitride light emitting structure disposed on the substrate; and a transparent electrode layer disposed on the nitride light emitting structure, wherein the transparent electrode layer includes a plurality of protrusions, the plurality of protrusions each have a lower portion and an upper portion, and a side of the lower portion and a side of the upper portion have different gradients.

Abstract: A light-emitting diode includes, a semiconductor stack including a first semiconductor layer, a second semiconductor layer, and an active layer. The light-emitting diode also includes a transparent conductive layer including a first transparent conductive layer disposed on the second semiconductor layer and a second transparent conductive layer disposed on the first transparent conductive layer. The second transparent conductive layer has a conductivity different than the first transparent conductive layer.

Abstract: Disclosed herein are a light emitting diode including a plurality of protrusions including zinc oxide and a method for manufacturing the same. According to an exemplary embodiment of the present disclosure, the light emitting diode includes: a substrate; a nitride light emitting structure disposed on the substrate; and a transparent electrode layer disposed on the nitride light emitting structure, wherein the transparent electrode layer includes a plurality of protrusions, the plurality of protrusions each have a lower portion and an upper portion, and a side of the lower portion and a side of the upper portion have different gradients.