Abstract: A method for manufacturing a high-electron-mobility transistor includes the following steps: providing a semiconductor substrate, wherein the semiconductor substrate includes a channel layer and a barrier layer on the channel layer; forming a protective layer on the semiconductor substrate at a position corresponding to a gate opening; forming an overlay layer on the semiconductor substrate in an area around the protective layer, and removing the protective layer to form the gate opening; and forming a p-type layer in and at the gate opening and on the overlay layer. Compared with the prior art, the method for manufacturing a high-electron-mobility transistor lowers the technical threshold of manufacture, allows the threshold voltage (Vth) and ON-resistance (Rds(ON)) of each such transistor to be individually controlled at the desired levels, and can improve product yield effectively.

Abstract: A semiconductor field-effect transistor, a power amplifier comprising the same and a manufacturing method thereof are provided herein. The semiconductor field-effect transistor contains an n-type doped layer arranged close to the edge of the two-dimensional electron gas area in a channel layer; said n-type doped layer is arranged to adjust the distribution of electron concentration in the transistor, and to improve the RF linearity of the overall component; thereby not only the threshold voltage can be controlled through the adjustment of the charge, but the contact and series resistance can also be reduced.

Abstract: A structure for integrating a field-effect transistor (FET) and a heterojunction bipolar transistor (HBT) is provided. The structure includes: a substrate; a first epitaxial structure located on the substrate, having a part of the HBT; and a second epitaxial structure located on the first epitaxial structure, having a part of the FET.

Abstract: An unmanned aerial vehicle including a feeling-effect showing device is provided. The feeling-effect showing device is adapted for showing a feeling effect such as a visual effect and/or an audio effect. In addition, a method of using a plurality of unmanned aerial vehicles to show a feeling effect is also provided.

Abstract: The creation provides a mobile electronic device adapted for being connected to a server through a network. The mobile electronic device includes a lens, a wireless communication unit, a storing unit and a processing unit. The lens is adapted for taking a static picture. The wireless communication unit is adapted for being connected to the server through the network. The storing unit stores an object-identifying application. The processing unit is adapted for executing the object-identifying application. The object-identifying application analyzes and identifies the static picture by means of a database stored in the server. At least one related information of at least one identified object in the static picture is forwarded from the server back to the mobile electronic device.

Abstract: A photodiode device and methods of manufacturing the same are provided. The photodiode device comprises a light absorption layer defining a light-facing side and a back-light side; a via passing through the absorption layer, the via defining a side wall and a bottom surface; a conformal isolation layer covering the side wall and the bottom surface; a first patterned conductive layer disposed on the back-light side, the first patterned conductive layer having a first portion covering a first portion of the conformation isolation layer; a second patterned conductive layer disposed on the light-facing side of the absorption layer; and an opening through the conformal isolation layer, wherein the opening is filled with the second patterned conductive layer such that the second patterned conductive layer is connected with the first portion of the first patterned conductive layer.

Abstract: A solar cell device having an airbridge type contact and the method of forming the same are provided. The solar cell device includes a semiconductor layer for turning light into electric current; at least two conductive line sections for transmitting the electric current from the semiconductor layer and formed on the semiconductor layer; and an airbridge type contact interposing between the two conductive line sections and connecting thereto, wherein a space under the airbridge type contact and between the two conductive line sections is formed, and light is allowed to enter the semiconductor layer by passing through the space.

Abstract: A photodiode device and the manufacturing method of the same are provided. The photodiode device includes a substrate; an epitaxy layer on the substrate, the epitaxy layer including a window layer and a cap layer on the window layer, the cap layer covering a portion of the window layer; and a patterned conductive layer on the cap layer, the patterned conductive layer being formed with a bottom area and a top area wherein the bottom area is greater than the top area.

Abstract: A multi-junction solar cell structure includes a supporting substrate, a Group IV element-based thin film, and a Group III-V element-based thin film sequentially stacked on the supporting substrate. When the multi-junction solar cell structure is active, the Group III-V element-based thin film contacts the light before the Group IV element-based thin film does. The Group IV element-based thin film includes a first solar cell and the Group III-V element-based thin film includes a second solar cell, wherein the band gap of the first solar cell is lower than the band gap of the second solar cell.

Abstract: A photodiode device and methods of manufacturing the same are provided. The photodiode device comprises a light adsorption layer defining a light-facing side and a back-light side; a via passing through the adsorption layer, the via defining a side wall and a bottom surface; a conformal isolation layer covering the side wall and the bottom surface; a first patterned conductive layer disposed on the back-light side, the first patterned conductive layer having a first portion covering a first portion of the conformation isolation layer; a second patterned conductive layer disposed on the light-facing side of the adsorption layer; and an opening through the conformal isolation layer, wherein the opening is filled with the second patterned conductive layer such that the second patterned conductive layer is connected with the first portion of the first patterned conductive layer.

Abstract: A method of manufacturing photodiode device includes the following steps: providing a wafer having a substrate and an epitaxy layer, the substrate having a first surface and a second surface and the epitaxy layer formed on the first surface; forming a first conductive layer on the second surface of the substrate; forming a patterned conductive layer above the epitaxy layer; and etching the patterned conductive layer by a reactive ion etching (RIE) process performed under argon gas and helium gas.

Abstract: A radiation detector, particularly suited for the detection of long wavelength infrared radiation, employs a plurality of multiple quantum well (MQW) superlattices in a unitary stack. The superlattices are electrically connected in parallel, and current outputs are obtained from the parallel connection as an indication of the incident radiation. Electrical contact layers are provided on the opposite sides of each superlattice, with adjacent superlattices sharing a common contact layer. The number of quantum well/barrier layer periods per superlattice is preferably reduced to about 20-30 divided by the number of superlattices in the stack, as compared to a single-superlattice detector with about 20-30 periods. This allows a common bias voltage applied to the superlattices to be similarly reduced by a factor approximately equal to the number of superlattices in the stack.

Abstract: A multi-layer collector heterojunction transistor (10) provides for high power, high efficiency transistor amplifier operation, especially in the RF (radio frequency) range of operation. A larger band gap first collector layer (12), approximately 15% of the active collector region (11) thickness, is provided at the base-collector junction (13). A smaller band gap second collector layer (14) forms the remainder of the active collector region (11). The multi-layer collector structure provides higher reverse bias breakdown voltage and higher carrier mobility during relevant portions of the output signal swing. A lower saturation voltage limit, or "knee" voltage, is provided at the operating points where linear operating regions transition to saturation operating regions as depicted in the output voltage-current (I-V) characteristic curves. The magnitude of the output signal swing of an amplifier may be increased, providing higher power amplification with greater power efficiency.

Abstract: An improved multiquantum well superlattice photodetector (10) for detecting long wavelength infrared radiation. Electron transport in a first excited energy state is enhanced in barrier layers (20) of the superlattice (16) by lowering the potential energy barriers of the barrier layers (20) to a predetermined level below the first excited energy state. The tunneling component of the dark current in a multiquantum well photodetector (10) may be substantially eliminated by placing a blocking layer (22) at one end of the superlattice (16). The thickness of the blocking layer (22) is also substantially greater than that of the barrier layers (20) of the superlattice (16) to prevent charge carriers which tunnel through the superlattice (16) from reaching the collector contact. The blocking layer (22) also has a potential energy barrier having a height at a level higher than that of the barrier layers (20) of the superlattice (16).

Abstract: A multiple quantum well (MQW) radiation sensor eliminates tunneling current from the photoactivated current that provides an indication of incident radiation, and yet preserves a substantial bias voltage across the superlattice, by fabricating an intermediate contact layer between the superlattice and a tunneling blocking layer. Using the intermediate contact layer to apply a bias voltage across the superlattice but not the blocking layer, the photoexcited current flow through the intermediate contact and blocking layers is taken as an indication of the incident radiation. The width of the intermediate contact layer and the barrier energy height of the blocking layer relative to that of the superlattice barrier layers are selected to enable a substantial photoexcited current flow across the blocking layer.

Abstract: A multiple quantum well (MQW) radiation sensor distinguishes radiation within a desired bandwidth, particularly long wavelength infrared radiation (LWIR), from background high intensity noise radiation that excites majority-minority charge carrier pairs. A minority charge carrier collector is provided at one end of the MQW, and the flow of minority charge carriers to the collector is sensed. The minority charge carrier flow provides an indication of the majority charge carrier flow that is attributable to the noise radiation rather than to radiation within the desired bandwidth, and can thus be used to provide a corrected indication of the desired bandwidth radiation.

Abstract: A multiple quantum well (MQW) superlattice photodetector, is surmounted by a slab of transparent material having an angled surface that extends upward and away from the photodetector, such that incident radiation which is initially normal to the superlattice undergoes total internal reflection at the angled surface and is reflected onto the detector at a substantially non-normal angle. This off-normal angle allows the radiation to be partially absorbed by the detector. A reflection grating is preferably formed on the opposite side of the detector to redirect received radiation back through the MQW superlattice at an altered angle, such that remaining radiation can be absorbed by the detector during the second pass. The detector is formed upon a substrate, with the slab, substrate and quantum wells all preferably formed from the same type of material. Multiple detectors may be formed in an array upon a common substrate, with a slab providing a common reflective surface for the overall array.

Abstract: A multiple quantum well superlattice radiation detector is compositionally graded to establish an internal electric field within the superlattice that allows the device to operate with a reduced or zero externally applied bias voltage. The compositional grading can be implemented by grading the doping levels of successive quantum wells or the relative proportions of elements in successive barrier layers of the superlattice, or by a combination of the two. If a tunneling current blocking layer is employed, it can also be compositionally graded to inhibit a substantial increase in the blocking layer's barrier energy level near a charge carrier collector on the other side of the blocking layer from the superlattice. The charge carrier collector can itself be provided with a graded dopant concentration near the blocking layer to inhibit reverse bias voltage breakdown in the blocking layer.

Abstract: A multiquantum well superlattice photodetector for detecting long wavelength infrared radiation in which dark current is reduced by a blocking layer. The tunneling component of the dark current in a multiquantum well photodetector is substantially eliminated by placing a blocking layer at one end of the superlattice. The blocking layer has a potential energy barrier having a height at the same level of the barrier layers of the superlattice. The thickness of the blocking layer is substantially greater than the barrier layers of the superlattice to prevent charge carriers which tunnel through the superlattice from reaching the ohmic contact.

Abstract: A multiple quantum well photodetector structure has superlattice which absorbs radiation polarized non-parallel to the superlattice during a first pass. Non-absorbed radiation polarized parallel to the superlattice is reflected back into the superlattice at a cross-angle to its incident angle, with its polarization shifted to a substantially non-parallel angle to the superlattice. At least part of this radiation is absorbed during its second pass through the superlattice, thereby increasing the efficiency of the device. An optical back grating is used to perform the cross-angle reflection, and a front grating may also be used to shift an incoming beam which is initially normal to the superlattice to an angle at which part of the beam is absorbed. The front grating is at a cross-angle to the back grating to enable a cross-angular shift by the back grating.