Patents by Inventor Chan-Sik KWON

Chan-Sik KWON has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20250168984
    Abstract: A printed circuit board includes: a substrate body part including a first region and a second region, and including a first side and a second side; first upper redistribution patterns disposed on the first side in the first region; third upper redistribution patterns disposed on the first side in the second region; second upper redistribution patterns disposed on the first side and between the first and third upper redistribution patterns; connection patterns connecting the first upper redistribution patterns to the second upper redistribution patterns; a solder resist film including first recesses, second recesses, and third recesses, which respectively expose upper surfaces of the first, second and third upper redistribution patterns; and dummy wire patterns disposed within the second and third recesses and connecting the second upper redistribution patterns to the third upper redistribution patterns, wherein the first, second and third upper redistribution patterns are electrically connected to one another
    Type: Application
    Filed: May 29, 2024
    Publication date: May 22, 2025
    Inventors: Jin Duck PARK, Chan-Sik KWON, Yong-Seong KIM, In Wook IM
  • Patent number: 11740276
    Abstract: A crack detection chip includes a chip which includes an internal region and an external region surrounding the internal region, a guard ring formed inside the chip along an edge of the chip to define the internal region and the external region, an edge wiring disposed along an edge of the internal region in the form of a closed curve and a pad which is exposed on a surface of the chip and is connected to the edge wiring. The edge wiring is connected to a Time Domain Reflectometry (TDR) module which applies an incident wave to the edge wiring through the pad, and detects a reflected wave formed in the edge wiring to detect a position of a crack.
    Type: Grant
    Filed: September 14, 2020
    Date of Patent: August 29, 2023
    Assignee: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Chan-Sik Kwon, Jin Duck Park, Jin Wook Jang, Ji-Yeon Han
  • Publication number: 20210018553
    Abstract: A crack detection chip includes a chip which includes an internal region and an external region surrounding the internal region, a guard ring formed inside the chip along an edge of the chip to define the internal region and the external region, an edge wiring disposed along an edge of the internal region in the form of a closed curve and a pad which is exposed on a surface of the chip and is connected to the edge wiring. The edge wiring is connected to a Time Domain Reflectometry (TDR) module which applies an incident wave to the edge wiring through the pad, and detects a reflected wave formed in the edge wiring to detect a position of a crack.
    Type: Application
    Filed: September 14, 2020
    Publication date: January 21, 2021
    Inventors: CHAN-SIK KWON, JIN DUCK PARK, JIN WOOK JANG, JI-YEON HAN
  • Patent number: 10788528
    Abstract: A crack detection chip includes a chip which includes an internal region and an external region surrounding the internal region, a guard ring formed inside the chip along an edge of the chip to define the internal region and the external region, an edge wiring disposed along an edge of the internal region in the form of a closed curve and a pad which is exposed on a surface of the chip and is connected to the edge wiring. The edge wiring is connected to a Time Domain Reflectometry (TDR) module which applies an incident wave to the edge wiring through the pad, and detects a reflected wave formed in the edge wiring to detect a position of a crack.
    Type: Grant
    Filed: October 4, 2018
    Date of Patent: September 29, 2020
    Assignee: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Chan-Sik Kwon, Jin Duck Park, Jin Wook Jang, Ji-Yeon Han
  • Publication number: 20190265291
    Abstract: A crack detection chip includes a chip which includes an internal region and an external region surrounding the internal region, a guard ring formed inside the chip along an edge of the chip to define the internal region and the external region, an edge wiring disposed along an edge of the internal region in the form of a closed curve and a pad which is exposed on a surface of the chip and is connected to the edge wiring. The edge wiring is connected to a Time Domain Reflectometry (TDR) module which applies an incident wave to the edge wiring through the pad, and detects a reflected wave formed in the edge wiring to detect a position of a crack.
    Type: Application
    Filed: October 4, 2018
    Publication date: August 29, 2019
    Inventors: Chan-Sik Kwon, Jin Duck Park, Jin Wook Jang, Ji-Yeon Han
  • Patent number: 9255959
    Abstract: A test apparatus for a semiconductor package comprising an X-ray analyzer acquiring an X-ray image of the semiconductor package and detecting a thickness of the semiconductor package from the X-ray image, and a thermal reaction analyzer applying a voltage to the semiconductor package and detecting a failure position of the semiconductor package using a surface temperature of the semiconductor package and the thickness of the semiconductor package may be provided.
    Type: Grant
    Filed: August 7, 2013
    Date of Patent: February 9, 2016
    Assignee: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Chan-Sik Kwon, Seok-Won Jeong, Jae-Ho Choi, Jun-Young Ko
  • Publication number: 20140062496
    Abstract: A test apparatus for a semiconductor package comprising an X-ray analyzer acquiring an X-ray image of the semiconductor package and detecting a thickness of the semiconductor package from the X-ray image, and a thermal reaction analyzer applying a voltage to the semiconductor package and detecting a failure position of the semiconductor package using a surface temperature of the semiconductor package and the thickness of the semiconductor package may be provided.
    Type: Application
    Filed: August 7, 2013
    Publication date: March 6, 2014
    Applicant: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Chan-Sik KWON, Seok-Won JEONG, Jae-Ho CHOI, Jun-Young KO