Patents by Inventor Chan Wing Chor

Chan Wing Chor has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Low-voltage structure for high-voltage electrostatic discharge protection
    Patent number: 8513774
    Abstract: An electrostatic discharge (ESD) protected device may include a substrate, an N+ doped buried layer, an N-type well region and a P-type well region. The N+ doped buried layer may be disposed proximate to the substrate. The N-type well region may be disposed proximate to a portion of the N+ doped buried layer to form a collector region. The P-type well region may be disposed proximate to remaining portions of the N+ doped buried layer and having at least a P+ doped plate corresponding to a base region and distributed segments of N+ doped plates corresponding to an emitter region.
    Type: Grant
    Filed: October 6, 2010
    Date of Patent: August 20, 2013
    Assignee: Macronix International Co., Ltd.
    Inventors: Hsin-Liang Chen, Chan Wing Chor
  • LOW-VOLTAGE STRUCTURE FOR HIGH-VOLTAGE ELECTROSTATIC DISCHARGE PROTECTION
    Publication number: 20120086080
    Abstract: An electrostatic discharge (ESD) protected device may include a substrate, an N+ doped buried layer, an N-type well region and a P-type well region. The N+ doped buried layer may be disposed proximate to the substrate. The N-type well region may be disposed proximate to a portion of the N+ doped buried layer to form a collector region. The P-type well region may be disposed proximate to remaining portions of the N+ doped buried layer and having at least a P+ doped plate corresponding to a base region and distributed segments of N+ doped plates corresponding to an emitter region.
    Type: Application
    Filed: October 6, 2010
    Publication date: April 12, 2012
    Inventors: Hsin-Liang Chen, Chan Wing Chor