Abstract: Provided is an apparatus for manufacturing a photovoltaic cell in which a light absorption layer is formed by promoting chalcogenation. The apparatus includes a chamber, an object supporting element which is disposed inside the chamber and on which an object is mounted, and a microporous member which is disposed to cover the object supporting element, on which a chalcogen source is mounted, and which has micropores having such a size that the chalcogen source reaches the object through the micropores.

Abstract: Provided is a method for manufacturing a photovoltaic cell in which a light absorption layer is formed by promoting chalcogenation. The method includes providing a microporous member, arranging an object on a first side of the microporous member, and arranging a chalcogen source on a second side of the microporous member opposite to the first side, heating the chalcogen source, transmitting a liquefied or evaporated portion of the heated chalcogen source through the microporous member, and exposing the object to the liquefied or evaporated portion of the heated chalcogen source that has passed through the microporous member.

Abstract: A photovoltaic-charged secondary battery system is provided, in which an electrode for optical power generation and an electrode for charging and discharging generated electrical energy are integrated into a single cell structure, and the potential difference between the electrodes is systematically controlled, thus maximizing the conversion efficiency of optical energy, maximizing the utilization rate of cell energy, and extending the life span of the battery. Thus, the photovoltaic-charged secondary battery system may include a transparent electrode capable of transmitting light; a PN semiconductor layer formed on the transparent electrode and generating a current by incident light; and a secondary battery layer, formed on the PN semiconductor layer, in which the current generated by the PN semiconductor layer is charged.

Abstract: Provided are a bulk heterojunction solar cell, including: a substrate; a rear electrode formed on a top surface of the substrate; a core layer comprising a copper indium gallium diselenide (CIGS) layer in which a CIGS powder is formed on a top surface of the rear electrode to be porous, an n-type buffer layer coated on the CIGS powder, and an n-type ZnO layer coated on the n-type buffer layer; and a grid electrode formed on a top surface of the core layer, and a method of manufacturing the same. A porous p-type semiconductor layer is formed by sintering CIGS powders, and then, the n-type semiconductor is coated on the surface of the CIGS powders by using a wet method such that a much larger junction area than a physical size of the solar cell is formed and a power output of the solar cell can be greatly increased.

Abstract: An array of light emitting devices, each device comprising a sloped wall mesa (24) of luminescent semiconductor material. Extending over the sloped wall mesas (24) is a metal contact (30). The array can be arranged as a parallel addressable system so that all devices (24) can be stimulated to emit light simultaneously. Alternatively, the array can be arranged as a matrix addressable array, in which case individual devices can be selectively stimulated.

Abstract: The present invention provides a photovoltaic-charged secondary battery system, in which an electrode for optical power generation and an electrode for charging and discharging generated electrical energy are integrated into a single cell structure, and the potential difference between the electrodes is systematically controlled, thus maximizing the conversion efficiency of optical energy, maximizing the utilization rate of cell energy, and extending the life span of the battery. For this, the present invention provides a photovoltaic-charged secondary battery system including: a transparent electrode capable of transmitting light; a PN semiconductor layer formed on the transparent electrode and generating a current by incident light; and a secondary battery layer, formed on the PN semiconductor layer, in which the current generated by the PN semiconductor layer is charged.

Abstract: A vertical-cavity device comprises: (a) a chip comprising an active semiconductor layer for providing optical gain; (b) a first mirror arranged on a first side of the active layer; (c) a second mirror arranged on a second side of the active layer, opposite to the first mirror, and forming with at least the first mirror an optically resonant cavity that passes through the active layer in a direction out of the plane of the active layer; (d) a heatspreader for removing heat from the active layer, the heatspreader being arranged inside the cavity and having a first surface adjacent to the chip and a second surface opposite to the first surface, the heatspreader being transparent to light of wavelengths in an operating bandwidth of the device. In addition to removing heat from the active layer, the heatspreader also has one or more further selected property that has a further selected effect on light output from the device.

Abstract: An array of light emitting devices, each device comprising a sloped wall mesa (24) of luminescent semiconductor material. Extending over the sloped wall mesas (24) is a metal contact (30). The array can be arranged as a parallel addressable system so that all devices (24) can be stimulated to emit light simultaneously. Alternatively, the array can be arranged as a matrix addressable array, in which case individual devices can be selectively stimulated.