Abstract: A light-emitting device and a manufacturing method thereof are provided. The light-emitting device includes a substrate, an epitaxial blocking layer, and a light-emitting epitaxial structure. The substrate has a surface, in which the surface includes a plurality of protruding parts and a plurality of recess parts relative to the protruding parts. The epitaxial blocking layer disposed on the substrate covers the recess parts and exposes the protruding parts. The light-emitting epitaxial structure disposed on the substrate is connected to the protruding parts and is disposed above the recess parts. The light-emitting epitaxial structure is formed by using the protruding parts as a growth surface thereof so as to have a better crystalline quality.

Abstract: A light-emitting device and a manufacturing method thereof are provided. The light-emitting device includes a substrate, an epitaxial blocking layer, and a light-emitting epitaxial structure. The substrate has a surface, in which the surface includes a plurality of protruding parts and a plurality of recess parts relative to the protruding parts. The epitaxial blocking layer disposed on the substrate covers the recess parts and exposes the protruding parts. The light-emitting epitaxial structure disposed on the substrate is connected to the protruding parts and is disposed above the recess parts. The light-emitting epitaxial structure is formed by using the protruding parts as a growth surface thereof so as to have a better crystalline quality.

Abstract: A light-emitting device includes a substrate; a light-emitting unit formed on the substrate, comprising a first conductivity type semiconductor; a second conductivity type semiconductor; an active layer formed between the first and the second conductivity type semiconductors; and an exposed region formed in the light-emitting unit, exposing the first conductivity type semiconductor; a first electrode extending layer formed on the first conductivity type semiconductor in the exposed region; a second electrode extending layer formed on the second conductivity type semiconductor; a transparent insulator, formed on the light-emitting unit and filled in the exposed region; a first electrode formed on the transparent insulator; and a plurality of conductive channel layers formed in the transparent insulator; wherein one of the plurality of conductive channel layers connects the first electrode and one of the first and the second electrode extending layers.

Abstract: A light-emitting device includes a substrate; a light-emitting unit formed on the substrate, comprising a first conductivity type semiconductor; a second conductivity type semiconductor; an active layer formed between the first and the second conductivity type semiconductors; and an exposed region formed in the light-emitting unit, exposing the first conductivity type semiconductor; a first electrode extending layer formed on the first conductivity type semiconductor in the exposed region; a second electrode extending layer formed on the second conductivity type semiconductor; a transparent insulator, formed on the light-emitting unit and filled in the exposed region; a first electrode formed on the transparent insulator; and a plurality of conductive channel layers formed in the transparent insulator; wherein one of the plurality of conductive channel layers connects the first electrode and one of the first and the second electrode extending layers.

Abstract: A light-emitting diode and method for manufacturing the same are described. The light-emitting diode comprises: a conductive substrate including a first surface and a second surface opposite to the first surface; a reflector structure comprising a conductive reflector layer bonding to the first surface of the conductive substrate and a conductive distributed Bragg reflector (DBR) structure stacked on the conductive reflector layer; an illuminant epitaxial structure disposed on the reflector structure; a first electrode disposed on a portion of the illuminant epitaxial structure; and a second electrode bonded to the second surface of the conductive substrate.