Patents by Inventor Chan-Yi Chen

Chan-Yi Chen has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20240144467
    Abstract: A hot spot defect detecting method and a hot spot defect detecting system are provided. In the method, hot spots are extracted from a design of a semiconductor product to define a hot spot map comprising hot spot groups, wherein local patterns in a same context of the design yielding a same image content are defined as a same hot spot group. During runtime, defect images obtained by an inspection tool performing hot scans on a wafer manufactured with the design are acquired and the hot spot map is aligned to each defect image to locate the hot spot groups. The hot spot defects in each defect image are detected by dynamically mapping the hot spot groups located in each defect image to a plurality of threshold regions and respectively performing automatic thresholding on pixel values of the hot spots of each hot spot group in the corresponding threshold region.
    Type: Application
    Filed: January 8, 2024
    Publication date: May 2, 2024
    Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Chien-Huei Chen, Pei-Chao Su, Xiaomeng Chen, Chan-Ming Chang, Shih-Yung Chen, Hung-Yi Chung, Kuang-Shing Chen, Li-Jou Lee, Yung-Cheng Lin, Wei-Chen Wu, Shih-Chang Wang, Chien-An Lin
  • Publication number: 20240097051
    Abstract: A Schottky diode includes a substrate, a first drift region in the substrate, a second drift region in the substrate, a first dielectric layer disposed over the substrate, a first doped region in the first drift region, a second doped region in the second drift region, a third doped region in the first drift region, and a metal field plate disposed over the first dielectric layer. The first drift region and the first doped region include a first conductivity type. The second drift region, the second doped region and third doped region include a second conductivity type complementary to the first conductivity type. The first dielectric layer overlaps a portion of the first drift region and a portion of the second drift region. The second doped region is separated from the first doped region.
    Type: Application
    Filed: January 16, 2023
    Publication date: March 21, 2024
    Inventors: GUAN-YI LI, CHIA-CHENG HO, CHAN-YU HUNG, FEI-YUN CHEN
  • Patent number: 7132584
    Abstract: A method of using high temperature plasma to disintegrate waste containing titanyl phthalocyanine (TiOPc) comprises heating a mixture of titanyl phthalocyanine (TiOPc), a vitrifying material and optionally selected waste soil to a temperature of 1,220° C. to 10,000° C. until the mixture becomes a molten lava. The plasma breaks down the titanyl phthalocyanine and encapsulates the benign products in the lava that is chemically very stable. Since the titanyl phthalocyanine (TiOPc) is disintegrated completely in the process, the titanyl phtbalocyanine (TiOPc) no longer represents a threat to the environmental.
    Type: Grant
    Filed: February 11, 2004
    Date of Patent: November 7, 2006
    Assignees: Labeltek Inc., Tai Chan Environmental Technologies Ltd.
    Inventors: Yu-Ting Shen, Chih-Wei Kuo, Ling Lu, Chan-Yi Chen, Chang-Lung Hsieh, Chi-Ho Fu, Bun-Ching Liu, Fu-Chen Liu, Chen-Lin Huan
  • Publication number: 20050177018
    Abstract: A method of using high temperature plasma to disintegrate waste containing titanyl phthalocyanine (TiOPc) comprises heating a mixture of titanyl phthalocyanine (TiOPc), a vitrifying material and selected waste soil to a temperature of 1,220° C. to 10,000° C. until the mixture becomes molten lava. The plasma breaks down the titanyl phthalocyanine and encapsulates the benign products in the lava that is chemically very stable. Since the titanyl phthalocyanine (TiOPc) is disintegrated completely in the process, the titanyl phthalocyanine (TiOPc) no longer represents a threat to the environmental.
    Type: Application
    Filed: February 11, 2004
    Publication date: August 11, 2005
    Inventors: Yu-Ting Shen, Chih-Wei Kuo, Ling Lu, Chan-Yi Chen, Chang-Lung Hsieh, Chi-Ho Fu, Bun-Ching Liu, Fu-Chen Liu, Chen-Lin Huan
  • Publication number: 20050049450
    Abstract: A melting plasma method for treatment of Alq3 organic waste has steps of (a) providing an organic waste comprising Alq3; (b) heating the Alq3 organic waste provided in step (a) by melting plasma; and (c) obtaining a non-toxic organic solid lava which does not have any Alq3.
    Type: Application
    Filed: August 29, 2003
    Publication date: March 3, 2005
    Inventors: Yu-Ting Shen, Chun-Liang Lai, Ling Lu, Chan-Yi Chen, Chang-Lung Hsieh, Chi-Ho Fu, Bun-Ching Liu, Fu-Chen Liu, Chen-Lin Huan