Abstract: Methods for making semiconductor devices are disclosed herein. A method configured in accordance with a particular embodiment includes forming a spacer material on an encapsulant such that the encapsulant separates the spacer material from an active surface of a semiconductor device and at least one interconnect projecting away from the active surface. The method further includes molding the encapsulant such that at least a portion of the interconnect extends through the encapsulant and into the spacer material. The interconnect can include a contact surface that is substantially co-planar with the active surface of the semiconductor device for providing an electrical connection with the semiconductor device.

Abstract: Methods for making semiconductor devices are disclosed herein. A method configured in accordance with a particular embodiment includes forming a spacer material on an encapsulant such that the encapsulant separates the spacer material from an active surface of a semiconductor device and at least one interconnect projecting away from the active surface. The method further includes molding the encapsulant such that at least a portion of the interconnect extends through the encapsulant and into the spacer material. The interconnect can include a contact surface that is substantially co-planar with the active surface of the semiconductor device for providing an electrical connection with the semiconductor device.

Abstract: Methods for making semiconductor devices are disclosed herein. A method configured in accordance with a particular embodiment includes forming a spacer material on an encapsulant such that the encapsulant separates the spacer material from an active surface of a semiconductor device and at least one interconnect projecting away from the active surface. The method further includes molding the encapsulant such that at least a portion of the interconnect extends through the encapsulant and into the spacer material. The interconnect can include a contact surface that is substantially co-planar with the active surface of the semiconductor device for providing an electrical connection with the semiconductor device.

Abstract: Methods for making semiconductor devices are disclosed herein. A method configured in accordance with a particular embodiment includes forming a spacer material on an encapsulant such that the encapsulant separates the spacer material from an active surface of a semiconductor device and at least one interconnect projecting away from the active surface. The method further includes molding the encapsulant such that at least a portion of the interconnect extends through the encapsulant and into the spacer material. The interconnect can include a contact surface that is substantially co-planar with the active surface of the semiconductor device for providing an electrical connection with the semiconductor device.

Abstract: Methods for making semiconductor devices are disclosed herein. A method configured in accordance with a particular embodiment includes forming a spacer material on an encapsulant such that the encapsulant separates the spacer material from an active surface of a semiconductor device and at least one interconnect projecting away from the active surface. The method further includes molding the encapsulant such that at least a portion of the interconnect extends through the encapsulant and into the spacer material. The interconnect can include a contact surface that is substantially co-planar with the active surface of the semiconductor device for providing an electrical connection with the semiconductor device.

Abstract: Systems, devices, and methods for interconnects for a multi-die package are described. A multi-die package may include a set of conductive pillars and two or more semiconductor dice that each include a bond pad. In some cases, the multi-die package may include a plurality of pillar-wire combinations, and a bond wire may couple a corresponding conductive pillar with a corresponding bond pad. Pillar-wire combinations may each collectively have a matched impedance, or pillar-wire combinations in different groups may have different collective impedances. In other cases, a conductive pillar may be directly coupled with a corresponding bond pad without a bond wire. Different pillar-wire combinations or directly-coupled pillars may carry different signals. In some cases, pillars may be individually impedance-matched to a desired impedance.

Abstract: A semiconductor die that includes a first die located on a first side of an interposer and a second die located on a second side of the interposer. Active sides of the first and second dies may each face the interposer. A bond wire may electrically connect the first die to the second side of the interposer and a bond wire may electrically connect the second die to the first side of the interposer. The bond wires may extend through a plurality of windows in the interposer. First and second dies may be attached to a first side of an interposer and may be electrically connected to a second side of the interposer through windows and third and fourth dies may be attached to a second side of the interposer and may be electrically connected to the first side of the interposer through windows.

Abstract: A semiconductor die that includes a first die located on a first side of an interposer and a second die located on a second side of the interposer. Active sides of the first and second dies may each face the interposer. A bond wire may electrically connect the first die to the second side of the interposer and a bond wire may electrically connect the second die to the first side of the interposer. The bond wires may extend through a plurality of windows in the interposer. First and second dies may be attached to a first side of an interposer and may be electrically connected to a second side of the interposer through windows and third and fourth dies may be attached to a second side of the interposer and may be electrically connected to the first side of the interposer through windows.

Abstract: A semiconductor die that includes a first die located on a first side of an interposer and a second die located on a second side of the interposer. Active sides of the first and second dies may each face the interposer. A bond wire may electrically connect the first die to the second side of the interposer and a bond wire may electrically connect the second die to the first side of the interposer. The bond wires may extend through a plurality of windows in the interposer. First and second dies may be attached to a first side of an interposer and may be electrically connected to a second side of the interposer through windows and third and fourth dies may be attached to a second side of the interposer and may be electrically connected to the first side of the interposer through windows.

Abstract: A semiconductor die that includes a first die located on a first side of an interposer and a second die located on a second side of the interposer. Active sides of the first and second dies may each face the interposer. A bond wire may electrically connect the first die to the second side of the interposer and a bond wire may electrically connect the second die to the first side of the interposer. The bond wires may extend through a plurality of windows in the interposer. First and second dies may be attached to a first side of an interposer and may be electrically connected to a second side of the interposer through windows and third and fourth dies may be attached to a second side of the interposer and may be electrically connected to the first side of the interposer through windows.

Abstract: Methods for making semiconductor devices are disclosed herein. A method configured in accordance with a particular embodiment includes forming a spacer material on an encapsulant such that the encapsulant separates the spacer material from an active surface of a semiconductor device and at least one interconnect projecting away from the active surface. The method further includes molding the encapsulant such that at least a portion of the interconnect extends through the encapsulant and into the spacer material. The interconnect can include a contact surface that is substantially co-planar with the active surface of the semiconductor device for providing an electrical connection with the semiconductor device.

Abstract: Methods for making semiconductor devices are disclosed herein. A method configured in accordance with a particular embodiment includes forming a spacer material on an encapsulant such that the encapsulant separates the spacer material from an active surface of a semiconductor device and at least one interconnect projecting away from the active surface. The method further includes molding the encapsulant such that at least a portion of the interconnect extends through the encapsulant and into the spacer material. The interconnect can include a contact surface that is substantially co-planar with the active surface of the semiconductor device for providing an electrical connection with the semiconductor device.

Abstract: Methods for making semiconductor devices are disclosed herein. A method configured in accordance with a particular embodiment includes forming a spacer material on an encapsulant such that the encapsulant separates the spacer material from an active surface of a semiconductor device and at least one interconnect projecting away from the active surface. The method further includes molding the encapsulant such that at least a portion of the interconnect extends through the encapsulant and into the spacer material. The interconnect can include a contact surface that is substantially co-planar with the active surface of the semiconductor device for providing an electrical connection with the semiconductor device.

Abstract: Methods for making semiconductor devices are disclosed herein. A method configured in accordance with a particular embodiment includes forming a spacer material on an encapsulant such that the encapsulant separates the spacer material from an active surface of a semiconductor device and at least one interconnect projecting away from the active surface. The method further includes molding the encapsulant such that at least a portion of the interconnect extends through the encapsulant and into the spacer material. The interconnect can include a contact surface that is substantially co-planar with the active surface of the semiconductor device for providing an electrical connection with the semiconductor device.

Abstract: Methods for making semiconductor devices are disclosed herein. A method configured in accordance with a particular embodiment includes forming a spacer material on an encapsulant such that the encapsulant separates the spacer material from an active surface of a semiconductor device and at least one interconnect projecting away from the active surface. The method further includes molding the encapsulant such that at least a portion of the interconnect extends through the encapsulant and into the spacer material. The interconnect can include a contact surface that is substantially co-planar with the active surface of the semiconductor device for providing an electrical connection with the semiconductor device.

Abstract: Provided are a new microalgae strain and a use thereof, and more particularly, Ettlia sp. YC001 (KCTC 12109BP) having high carbon dioxide fixability, lipid productivity and carotenoid productivity, and a use thereof. The strain may be used for producing high quality biodiesel by controlling a lipid content and a composition ratio of a fatty acid according to culture conditions and/or culture time, and may be easily used for industrial uses, for examples, cosmetics, health foods, and medicines since large amounts of carotenoid and pigments are accumulated in cells.

Abstract: Methods for making semiconductor devices are disclosed herein. A method configured in accordance with a particular embodiment includes forming a spacer material on an encapsulant such that the encapsulant separates the spacer material from an active surface of a semiconductor device and at least one interconnect projecting away from the active surface. The method further includes molding the encapsulant such that at least a portion of the interconnect extends through the encapsulant and into the spacer material. The interconnect can include a contact surface that is substantially co-planar with the active surface of the semiconductor device for providing an electrical connection with the semiconductor device.

Abstract: Methods for making semiconductor devices are disclosed herein. A method configured in accordance with a particular embodiment includes forming a spacer material on an encapsulant such that the encapsulant separates the spacer material from an active surface of a semiconductor device and at least one interconnect projecting away from the active surface. The method further includes molding the encapsulant such that at least a portion of the interconnect extends through the encapsulant and into the spacer material. The interconnect can include a contact surface that is substantially co-planar with the active surface of the semiconductor device for providing an electrical connection with the semiconductor device.

Abstract: Optical waveguides with power monitoring or optical detection capabilities are disclosed. The waveguide includes a lower cladding, a core disposed on the lower cladding, an upper cladding disposed on the core and a trench extending transversely through a distal end of the lower cladding, core and upper cladding. The trench includes a distal wall that provides a reflective surface disposed at an angle relative to the end of the core of greater than 90°. A detector is disposed above the trench for receiving a reflected light beam off of the reflective surface. Various methods of manufacturing these devices are also disclosed.

Abstract: Optical waveguides with power monitoring or optical detection capabilities are disclosed. The waveguide includes a lower cladding, a core disposed on the lower cladding, an upper cladding disposed on the core and a trench extending transversely through a distal end of the lower cladding, core and upper cladding. The trench includes a distal wall that provides a reflective surface disposed at an angle relative to the end of the core of greater than 90°. A detector is disposed above the trench for receiving a reflected light beam off of the reflective surface. Various methods of manufacturing these devices are also disclosed.