Abstract: The present disclosure relates to a method, performed by at least one processor of an information processing system, of analyzing a pathological image. The method includes receiving a pathological image, detecting an object associated with medical information, in the received pathological image by using a machine learning model, generating an analysis result on the received pathological image, based on a result of the detecting, and outputting medical information about at least one region included in the pathological image, based on the analysis result.

Abstract: Provided is a display panel including a base substrate, a display element layer, and a light control layer, wherein the display element layer includes a first electrode, a second electrode, a light-emitting layer and a first pixel definition layer, the light control layer includes a second pixel definition layer, and a light control pattern including quantum dots, a bottom surface of the first pixel definition layer has a first width in a first direction, the first pixel definition layer has a first height in a second direction, a bottom surface of the second pixel definition layer has a second width in the first direction, the second pixel definition layer has a second height in the second direction, and a first aspect ratio calculated by dividing the first height by the first width is smaller than a second aspect ratio calculated by dividing the second height by the second width.

Abstract: Provided is a collector including an adhesion enhancing layer capable of providing a positive electrode having excellent adhesion and low interfacial resistance, a positive electrode including the same, and a lithium secondary battery including the positive electrode. The collector includes a conductive metal layer, and an adhesion enhancing layer provided on at least one surface of the conductive metal layer, wherein the adhesion enhancing layer has a surface roughness (Ra) of 90 nm to 600 nm and a diiodomethane contact angle of 70° to 120°.

Abstract: A method of driving an electronic device includes displaying a plurality of fingerprint recognition icons on a display device configured to perform fingerprint recognition, and releasing a lock state of the display device through a fingerprint authentication process upon determining at least one first fingerprint recognition icon among the plurality of fingerprint recognition icons is touched. The plurality of fingerprint recognition icons include at least one first fingerprint recognition icon configured to support the fingerprint recognition and at least one second fingerprint recognition icon configured to not support the fingerprint recognition.

Abstract: A semiconductor memory device includes a bit line extending in a first direction on a substrate, an active pattern on the bit line, a word line on a first sidewall of the active pattern and extending in a second direction, a back gate electrode on a second sidewall of the active pattern and extending in the second direction, a gate isolation pattern on the first sidewall of the active pattern and including a low-k pattern extending in the second direction, and a data storage pattern connected to the second surface of the active pattern. The word line is between the active pattern and the gate isolation pattern, and a vertical distance between the bit line and the word line is greater than a vertical distance between the bit line and the low-k pattern.

Abstract: The present disclosure relates to a medical image analysis method using a processor and a memory which are hardware. The method includes generating predicted second metadata for a medical image by using a prediction model, and determining a processing method of the medical image based on one of first metadata stored corresponding to the medical image and the second metadata.

Abstract: The present disclosure relates to a method, performed by at least one processor of an information processing system, of analyzing a pathological image. The method includes receiving a pathological image, detecting an object associated with medical information, in the received pathological image by using a machine learning model, generating an analysis result on the received pathological image, based on a result of the detecting, and outputting medical information about at least one region included in the pathological image, based on the analysis result.

Abstract: Methods for making semiconductor devices are disclosed herein. A method configured in accordance with a particular embodiment includes forming a spacer material on an encapsulant such that the encapsulant separates the spacer material from an active surface of a semiconductor device and at least one interconnect projecting away from the active surface. The method further includes molding the encapsulant such that at least a portion of the interconnect extends through the encapsulant and into the spacer material. The interconnect can include a contact surface that is substantially co-planar with the active surface of the semiconductor device for providing an electrical connection with the semiconductor device.

Abstract: Methods for making semiconductor devices are disclosed herein. A method configured in accordance with a particular embodiment includes forming a spacer material on an encapsulant such that the encapsulant separates the spacer material from an active surface of a semiconductor device and at least one interconnect projecting away from the active surface. The method further includes molding the encapsulant such that at least a portion of the interconnect extends through the encapsulant and into the spacer material. The interconnect can include a contact surface that is substantially co-planar with the active surface of the semiconductor device for providing an electrical connection with the semiconductor device.

Abstract: Provided are a boron-nitride nanoplatelet(s) (BNNP)/metal nanocomposite powder and a preparing method thereof, the BNNP/metal nanocomposite powder including a base metal and BNNP dispersed in the base metal and configured to serve as a reinforcement of the base metal, wherein the BNNP are interposed between metal particles of the base metal in the form of a thin film of a plurality of layers and combined with the metal particles, and an amount of the BNNP in the base metal is greater than 0 vol % and less than 90 vol %.

Abstract: The present invention provides a method for preparing a transparent hydrogel membrane, the method including: (a) preparing 6 to 10 wt % of a hyaluronic acid solution based on a total weight of a mixture by dissolving a hyaluronic acid in a basic aqueous solution; (b) mixing, with the hyaluronic acid solution, 0.01 to 0.05 wt % of a crosslinking agent based on the total weight of the mixture; and (c) shaping the transparent hydrogel membrane by pouring the mixture into a mold.

Abstract: Provided are a boron-nitride nanoplatelet(s) (BNNP)/metal nanocomposite powder and a preparing method thereof, the BNNP/metal nanocomposite powder including a base metal and BNNP dispersed in the base metal and configured to serve as a reinforcement of the base metal, wherein the BNNP are interposed between metal particles of the base metal in the form of a thin film of a plurality of layers and combined with the metal particles, and an amount of the BNNP in the base metal is greater than 0 vol % and less than 90 vol %.

Abstract: The present invention provides a method for preparing a transparent hydrogel membrane, the method including: (a) preparing 6 to 10 wt % of a hyaluronic acid solution based on a total weight of a mixture by dissolving a hyaluronic acid in a basic aqueous solution; (b) mixing, with the hyaluronic acid solution, 0.01 to 0.05 wt % of a crosslinking agent based on the total weight of the mixture; and (c) shaping the transparent hydrogel membrane by pouring the mixture into a mold.

Abstract: Methods for making semiconductor devices are disclosed herein. A method configured in accordance with a particular embodiment includes forming a spacer material on an encapsulant such that the encapsulant separates the spacer material from an active surface of a semiconductor device and at least one interconnect projecting away from the active surface. The method further includes molding the encapsulant such that at least a portion of the interconnect extends through the encapsulant and into the spacer material. The interconnect can include a contact surface that is substantially co-planar with the active surface of the semiconductor device for providing an electrical connection with the semiconductor device.

Abstract: Methods for making semiconductor devices are disclosed herein. A method configured in accordance with a particular embodiment includes forming a spacer material on an encapsulant such that the encapsulant separates the spacer material from an active surface of a semiconductor device and at least one interconnect projecting away from the active surface. The method further includes molding the encapsulant such that at least a portion of the interconnect extends through the encapsulant and into the spacer material. The interconnect can include a contact surface that is substantially co-planar with the active surface of the semiconductor device for providing an electrical connection with the semiconductor device.

Abstract: Systems, devices, and methods for interconnects for a multi-die package are described. A multi-die package may include a set of conductive pillars and two or more semiconductor dice that each include a bond pad. In some cases, the multi-die package may include a plurality of pillar-wire combinations, and a bond wire may couple a corresponding conductive pillar with a corresponding bond pad. Pillar-wire combinations may each collectively have a matched impedance, or pillar-wire combinations in different groups may have different collective impedances. In other cases, a conductive pillar may be directly coupled with a corresponding bond pad without a bond wire. Different pillar-wire combinations or directly-coupled pillars may carry different signals. In some cases, pillars may be individually impedance-matched to a desired impedance.

Abstract: A semiconductor die that includes a first die located on a first side of an interposer and a second die located on a second side of the interposer. Active sides of the first and second dies may each face the interposer. A bond wire may electrically connect the first die to the second side of the interposer and a bond wire may electrically connect the second die to the first side of the interposer. The bond wires may extend through a plurality of windows in the interposer. First and second dies may be attached to a first side of an interposer and may be electrically connected to a second side of the interposer through windows and third and fourth dies may be attached to a second side of the interposer and may be electrically connected to the first side of the interposer through windows.

Abstract: A semiconductor die that includes a first die located on a first side of an interposer and a second die located on a second side of the interposer. Active sides of the first and second dies may each face the interposer. A bond wire may electrically connect the first die to the second side of the interposer and a bond wire may electrically connect the second die to the first side of the interposer. The bond wires may extend through a plurality of windows in the interposer. First and second dies may be attached to a first side of an interposer and may be electrically connected to a second side of the interposer through windows and third and fourth dies may be attached to a second side of the interposer and may be electrically connected to the first side of the interposer through windows.

Abstract: A semiconductor die that includes a first die located on a first side of an interposer and a second die located on a second side of the interposer. Active sides of the first and second dies may each face the interposer. A bond wire may electrically connect the first die to the second side of the interposer and a bond wire may electrically connect the second die to the first side of the interposer. The bond wires may extend through a plurality of windows in the interposer. First and second dies may be attached to a first side of an interposer and may be electrically connected to a second side of the interposer through windows and third and fourth dies may be attached to a second side of the interposer and may be electrically connected to the first side of the interposer through windows.

Abstract: A semiconductor die that includes a first die located on a first side of an interposer and a second die located on a second side of the interposer. Active sides of the first and second dies may each face the interposer. A bond wire may electrically connect the first die to the second side of the interposer and a bond wire may electrically connect the second die to the first side of the interposer. The bond wires may extend through a plurality of windows in the interposer. First and second dies may be attached to a first side of an interposer and may be electrically connected to a second side of the interposer through windows and third and fourth dies may be attached to a second side of the interposer and may be electrically connected to the first side of the interposer through windows.