Abstract: An apparatus of tilting a seat cushion of a vehicle, includes a tilting motor, a pinion gear, a sector gear, and a tilting link which perform the tilting operation of the seat cushion and exert a binding force in a tilted state of the seat cushion and are provided to be connected to both of one side and the other side of a seat cushion frame, and has two sector gears positioned on left and right sides and connected to each other by a connection bar so that, by strengthening a binding force of the front portion of the seat cushion, it is possible to secure the safety of passengers in the event of a collision.

Abstract: A solar cell including a first conductive type semiconductor substrate; a first intrinsic semiconductor layer on a front surface of the semiconductor substrate; a first conductive type first semiconductor layer on at least one surface of the first intrinsic semiconductor layer; a second conductive type second semiconductor layer on a back surface of the semiconductor substrate; a second intrinsic semiconductor layer between the second semiconductor layer and the semiconductor substrate; a first conductive type third semiconductor layer on the back surface of the semiconductor substrate, the third semiconductor layer being spaced apart from the second semiconductor layer; and a third intrinsic semiconductor layer between the third semiconductor layer and the semiconductor substrate.

Abstract: A solar cell including a first conductive type semiconductor substrate; a first intrinsic semiconductor layer on a front surface of the semiconductor substrate; a first conductive type first semiconductor layer on at least one surface of the first intrinsic semiconductor layer; a second conductive type second semiconductor layer on a back surface of the semiconductor substrate; a second intrinsic semiconductor layer between the second semiconductor layer and the semiconductor substrate; a first conductive type third semiconductor layer on the back surface of the semiconductor substrate, the third semiconductor layer being spaced apart from the second semiconductor layer; and a third intrinsic semiconductor layer between the third semiconductor layer and the semiconductor substrate.

Abstract: A junction box connected to a photoelectric converter and including a body with a diode. The body includes first parts that are parallel to each other, a second part connecting ends of the first parts, and a bridge connecting the first parts. The diode is in the bridge, and the second part is spaced from the bridge to form an opening.

Abstract: A photoelectric module includes first and second photoelectric devices, and a connection support member electrically and structurally connecting the first and second photoelectric devices, the connection support member including a conductive core including an accommodation slot portion configured to accommodate portions of the first and second photoelectric devices, the accommodation slot portions electrically contacting bus lines extending out of the first and second photoelectric devices, and an insulation molding configured to insulate the conductive core.

Abstract: A sealing member according to an exemplary embodiment of the present invention includes a first plate having a predetermined width with a plate shape, and a second plate with a plate shape connected to both ends of the first plate, wherein the first plate and the second plate have the same plate shape and form a closed line.

Abstract: A photoelectric device and a photoelectric system including the same are provided. The photoelectric device includes a photoelectric module configured to perform photoelectric conversion and a cover glass facing the photoelectric module and having a receiving space that receives the photoelectric module. The cover glass includes a plate-shaped base part formed to face a main surface of the photoelectric module and a sidewall protruding from an edge of the base part to face a side section of the photoelectric module.

Abstract: A solar cell including a first conductive type semiconductor substrate; a first intrinsic semiconductor layer on a front surface of the semiconductor substrate; a first conductive type first semiconductor layer on at least one surface of the first intrinsic semiconductor layer; a second conductive type second semiconductor layer on a back surface of the semiconductor substrate; a second intrinsic semiconductor layer between the second semiconductor layer and the semiconductor substrate; a first conductive type third semiconductor layer on the back surface of the semiconductor substrate, the third semiconductor layer being spaced apart from the second semiconductor layer; and a third intrinsic semiconductor layer between the third semiconductor layer and the semiconductor substrate.