Abstract: An apparatus for treating a substrate includes a process chamber having a treatment space defined therein, a support unit for supporting the substrate in the treatment space, a fluid supply unit for supplying supercritical fluid to the treatment space, and a controller configured to control the fluid supply unit, wherein the fluid supply unit is configured to selectively supply the supercritical fluid at a first density or a second density higher than the first density into the treatment space. Thus, drying efficiency of the substrate when drying the substrate using the supercritical fluid may be improved.

Abstract: A supercritical processing apparatus includes an upper vessel including a first fluid hole formed in a center thereof, and a lower vessel including a second fluid hole formed in a center thereof. A space is defined between the upper and lower vessels and configured to allow a substrate to be placed therein. The upper vessel further includes a first guide portion provided at a lower portion thereof to be gradually inclined downward toward a periphery thereof from the first fluid hole.

Abstract: The present disclosure relates to a spin head, apparatus and method for treating a substrate including the spin head. The spin head includes a supporting plate where a substrate is placed and a chuck pin placed on the supporting plate and supporting a lateral portion of the substrate, wherein the chuck pin includes an outer body and an inner body inserted in the outer body and provided with a different material from the outer body, wherein each outer body and the inner body is provided with any one of a first material or a second material, and wherein one material of the first material and the second material is provided with a material having lower heat conductivity and better thermal resistance than another one.

Abstract: Disclosed is a method of treating a substrate. In one embodiment, supercritical fluid is supplied to a treatment space in a chamber such that the substrate in the treatment space is treated. The supercritical fluid is supplied to the treatment space while exhausting the treatment space. A temperature of the supercritical fluid supplied when exhausting the treatment space is higher than a temperature of the supercritical fluid supplied to the treatment space for treating the substrate.

Abstract: A composition for cleaning a substrate is provided. According to an embodiment, the composition for cleaning the substrate includes an organic solvent having a Hansen solubility parameter of 5 or more to 12 or less for polystyrene latex to the substrate.

Abstract: An apparatus for processing a substrate includes a chamber having a processing space inside, a substrate support unit that supports the substrate in the processing space, and a temperature adjustment unit that is installed in the chamber and that adjusts temperature in the processing space. The temperature adjustment unit includes a heating member that heats the processing space and a cooling member that cools the processing space. The cooling member is located closer to a central axis of the chamber than the heating member.

Abstract: Disclosed are an anhydrous substrate cleaning composition, a substrate treating method, and a substrate treating apparatus. The anhydrous substrate cleaning composition includes an etching composite that provides fluorine, a solvent that dissolves the etching composite, and a binder that is a composite including phosphorous.

Abstract: Disclosed are a substrate treating apparatus and a substrate treating method. The substrate treating apparatus includes a first process chamber configured to supply a development liquid to a substrate that is carried into the first process chamber after an exposure process is performed on the substrate, a second process chamber configured to treat the substrate through a supercritical fluid, a feeding robot configured to transfer the substrate from the first process chamber to the second process chamber, and a controller configured to control the feeding robot such that the substrate is transferred to the second process chamber in a state in which the development liquid supplied by the first process chamber resides in the substrate.

Abstract: An apparatus for treating a substrate includes a developing chamber that performs a developing process on the substrate by supplying a developing solution, a supercritical chamber that treats the substrate by supplying a supercritical fluid, and a transfer chamber having a transfer unit that transfers the substrate W between the developing chamber and the supercritical chamber.

Abstract: An apparatus for treating a substrate includes a process chamber having a treatment space defined therein, a support unit for supporting the substrate in the treatment space, a fluid supply unit for supplying supercritical fluid to the treatment space, and a controller configured to control the fluid supply unit, wherein the fluid supply unit is configured to selectively supply the supercritical fluid at a first density or a second density higher than the first density into the treatment space. Thus, drying efficiency of the substrate when drying the substrate using the supercritical fluid may be improved.

Abstract: Disclosed is a method of treating a substrate. In one embodiment, supercritical fluid is supplied to a treatment space in a chamber such that the substrate in the treatment space is treated. The supercritical fluid is supplied to the treatment space while exhausting the treatment space. A temperature of the supercritical fluid supplied when exhausting the treatment space is higher than a temperature of the supercritical fluid supplied to the treatment space for treating the substrate.

Abstract: An apparatus for treating a substrate includes a developing chamber that performs a developing process on the substrate by supplying a developing solution, a supercritical chamber that treats the substrate by supplying a supercritical fluid, and a transfer chamber having a transfer unit that transfers the substrate W between the developing chamber and the supercritical chamber.

Abstract: The present disclosure relates to a spin head, apparatus and method for treating a substrate including the spin head.

Abstract: A supercritical processing apparatus includes an upper vessel including a first fluid hole formed in a center thereof, and a lower vessel including a second fluid hole formed in a center thereof. A space is defined between the upper and lower vessels and configured to allow a substrate to be placed therein. The upper vessel further includes a first guide portion provided at a lower portion thereof to be gradually inclined downward toward a periphery thereof from the first fluid hole.

Abstract: A composition for cleaning a substrate is provided. According to an embodiment, the composition for cleaning the substrate includes an organic solvent having a Hansen solubility parameter of 5 or more to 12 or less for polystyrene latex to the substrate.

Abstract: An apparatus for treating a substrate includes a developing chamber that performs a developing process on the substrate by supplying a developing solution, a supercritical chamber that treats the substrate by supplying a supercritical fluid, and a transfer chamber having a transfer unit that transfers the substrate W between the developing chamber and the supercritical chamber.

Abstract: A substrate treating method includes performing a developing process on a substrate subjected to an exposing process and a post-bake process by applying a developing fluid to the substrate, applying a rinsing fluid to the substrate subjected to the developing process, and moving, to a high-pressure chamber, the substrate having the rinsing fluid applied thereto and treating the substrate by using a supercritical fluid.

Abstract: A substrate treating apparatus is provided which includes a treating container of which a top end is opened, a substrate support unit placed in a treating container to support a substrate, a treatment solution supply unit supplying a treatment solution to a substrate put on the support unit, and a heating unit placed in the substrate support unit to heat the substrate. The heating unit includes a heating element and a reflection element reflecting a heat from the heating element upward.

Abstract: An apparatus for processing a substrate includes a chamber having a processing space inside, a substrate support unit that supports the substrate in the processing space, and a temperature adjustment unit that is installed in the chamber and that adjusts temperature in the processing space. The temperature adjustment unit includes a heating member that heats the processing space and a cooling member that cools the processing space. The cooling member is located closer to a central axis of the chamber than the heating member.

Abstract: Disclosed are an anhydrous substrate cleaning composition, a substrate treating method, and a substrate treating apparatus. The anhydrous substrate cleaning composition includes an etching composite that provides fluorine, a solvent that dissolves the etching composite, and a binder that is a composite including phosphorous.