Abstract: A pixel structure including a substrate, a signal line, a plurality of pixel units and a light blocking pattern layer is provided. The signal line is disposed on the substrate and has opposing first and second sides. Two adjacent pixel units are disposed respectively on the first side and the second side of the signal line. Each pixel units includes an active device, a common electrode, an insulating layer, and a pixel electrode. The insulating layer is located on the common electrode. The pixel electrode is located on the insulating layer and is electrically connected to the active device. The pixel electrode includes an edge strip electrode and a plurality of extension electrodes. The extension electrodes respectively extend from the edge strip electrode toward the signal line. The light blocking pattern layer is located between two adjacent pixel units, and the light blocking pattern layer and the signal line overlap with each other.

Abstract: A semiconductor reaction device and a semiconductor reaction method are disclosed. The semiconductor reaction device includes a vacuum chamber, a stage unit, a heating unit, and a first lifting mechanism. The stage unit carries a substrate. When the stage unit drives the substrate to rise, the substrate separates the vacuum chamber to form a reaction space and a bottom space. The heating unit is disposed in the vacuum chamber. The heating unit and the substrate are located on opposite sides of the stage unit. The first lifting mechanism connects with the heating unit so as to move the heating unit, so that the heating unit is movable relative to the stage unit. When the substrate rises to form the reaction space, the distance between the heating unit and the substrate is changed by the first lifting mechanism, thereby changing the temperature of the substrate.

Abstract: A pixel structure including a substrate, a signal line, a plurality of pixel units and a light blocking pattern layer is provided. The signal line is disposed on the substrate and has opposing first and second sides. Two adjacent pixel units are disposed respectively on the first side and the second side of the signal line. Each pixel units includes an active device, a common electrode, an insulating layer, and a pixel electrode. The insulating layer is located on the common electrode. The pixel electrode is located on the insulating layer and is electrically connected to the active device. The pixel electrode includes an edge strip electrode and a plurality of extension electrodes. The extension electrodes respectively extend from the edge strip electrode toward the signal line. The light blocking pattern layer is located between two adjacent pixel units, and the light blocking pattern layer and the signal line overlap with each other.