Abstract: Transition metal dichalcogenide films and methods for depositing transition metal dichalcogenide films on a substrate are described. Methods for converting transition metal oxide films to transition metal dichalcogenide films are also described. The substrate is exposed to a metal precursor and an oxidant to form a transition metal oxide film; the transition metal oxide film is exposed to a chalcogenide precursor to form the transition metal dichalcogenide film.

Abstract: A method of capping a metal layer includes performing a conversion process to reduce a metal oxide layer formed on a top surface of the metal layer and form a metal sulfide layer on the top surface of the metal layer, exposing the top surface of the metal layer to an oxidizing environment, and performing a removal process to remove the metal sulfide layer.

Abstract: Methods of depositing metal-containing films having a composition gradient (i.e., gradient films) are described. The gradient films may be deposited by an atomic layer deposition (ALD) process or a chemical vapor deposition (CVD) process. The gradient film includes at least one metal selected from the group consisting of aluminum (Al), ruthenium (Ru), cobalt (Co), zinc (Zn), molybdenum (Mo), titanium (Ti), tungsten (W), tantalum (Ta), manganese (Mn), iridium (Ir), and copper (Cu). A metallic film is deposited on the gradient film, the metallic film including one or more of copper (Cu), ruthenium (Ru), cobalt (Co), tungsten (W), or molybdenum (Mo).

Abstract: Methods of manufacturing interconnect structures as part of a microelectronic device fabrication process are described. Methods of selectively depositing iridium-containing films are also described. The methods include exposing a substrate including a metallic material and a dielectric material to an iridium-containing precursor and a reactant to form the iridium-containing film. The iridium-containing film selectively grows on the metallic material relative to the dielectric material.

Abstract: Provided are ultrathin films for use as modulable-resistance channels (memristors, resistive switches, synaptic nodes/synaptic emulators, hysteretic resistors, ReRAM or RRAM, transistors, memtransistors) in the back-end-of-line (BEOL) applications, thus, combining two logic nodes in the BEOL and the front-end-of-line (FEOL). Transition metal dichalcogenides (TMDC) films, other 2D material films, metal oxide films, metal carboxide films, metal nitride oxide films, and a nitride films are provided for modulable-resistance channel (memristors, resistive switches, synaptic nodes/synaptic emulators, hysteretic resistors, ReRAM or RRAM, transistors, memtransistors) material applications in BEOL processes. Also provided are computing schemes making use of the modulable-resistance components.

Abstract: Provided are ultrathin films for use as modulable-resistance channels (memristors, resistive switches, synaptic nodes/synaptic emulators, hysteretic resistors, ReRAM or RRAM, transistors, memtransistors) in the back-end-of-line (BEOL) applications, thus, combining two logic nodes in the BEOL and the front-end-of-line (FEOL). Transition metal dichalcogenides (TMDC) films, other 2D material films, metal oxide films, metal carboxide films, metal nitride oxide films, and a nitride films are provided for modulable-resistance channel (memristors, resistive switches, synaptic nodes/synaptic emulators, hysteretic resistors, ReRAM or RRAM, transistors, memtransistors) material applications in BEOL processes. Also provided are computing schemes making use of the modulable-resistance components.

Abstract: Methods of depositing transition metal dichalcogenide (TMDC) films are described. The TMDC films can be used in electronic devices as, for example, a channel material in both back-end-of-line (BEOL) and front-end-of line (FEOL) applications depending on the TMDC growth temperature.

Abstract: A wound dressing system having an oxygen-permeable membrane having a first surface and a second surface with oxygen-permeable pillars extending from the second surface is described.

Abstract: Molybdenum(0) and coordination complexes are described. Methods for depositing molybdenum-containing films on a substrate are described. The substrate is exposed to a molybdenum precursor and a reactant to form the molybdenum-containing film (e.g., elemental molybdenum, molybdenum oxide, molybdenum carbide, molybdenum silicide, molybdenum disulfide, molybdenum nitride). The exposures can be sequential or simultaneous.

Abstract: Methods of depositing iridium-containing films are described. Methods of manufacturing interconnect structures as part of a microelectronic device fabrication process are also described. The methods include forming a dielectric layer including at least one feature defining a gap having sidewalls and a bottom on a substrate. The methods further include forming a blocking layer on the bottom by exposing the substrate to a blocking compound; selectively depositing an iridium-containing film on the sidewalls; removing the blocking layer; and performing a gap fill process to fill the gap with a gapfill material.

Abstract: Methods of manufacturing interconnect structures as part of a microelectronic device fabrication process are described. The methods include forming a dielectric layer including at least one feature defining a gap having sidewalls and a bottom on a substrate. The methods further include selectively depositing a metal-containing layer directly on the bottom; forming a blocking layer directly on the metal-containing layer; selectively forming a transition metal dichalcogenide (TMDC) film on the sidewalls; removing the blocking layer; and performing a gap fill process to fill the gap with a gapfill material.

Abstract: A method of capping a metal layer includes performing a conversion process to reduce a metal oxide layer formed on a top surface of the metal layer and form a metal sulfide layer on the top surface of the metal layer, exposing the top surface of the metal layer to an oxidizing environment, and performing a removal process to remove the metal sulfide layer.

Abstract: Transition metal dichalcogenide (TMDC) films and methods for conformally depositing TMDC films on a substrate surface are described. The substrate surface may have one or more features formed therein, one or more layers formed thereon, and combinations thereof. The substrate surface is exposed to a transition metal precursor and an oxidant to form a transition metal oxide film in a first phase. The transition metal oxide film is exposed to a chalcogenide precursor to convert the transition metal oxide film to the TMDC film in a second phase.

Abstract: Transition metal dichalcogenide films and methods for depositing transition metal dichalcogenide films on a substrate are described. Methods for converting transition metal oxide films to transition metal dichalcogenide films are also described. The substrate is exposed to a precursor and a chalcogenide reactant to form the transition metal dichalcogenide film. The exposures can be sequential or simultaneous.

Abstract: Molybdenum(0) and coordination complexes are described. Methods for depositing molybdenum-containing films on a substrate are described. The substrate is exposed to a molybdenum precursor and a reactant to form the molybdenum-containing film (e.g., elemental molybdenum, molybdenum oxide, molybdenum carbide, molybdenum silicide, molybdenum disulfide, molybdenum nitride). The exposures can be sequential or simultaneous.

Abstract: Transition metal dichalcogenide films and methods for depositing transition metal dichalcogenide films on a substrate are described. Methods for converting transition metal oxide films to transition metal dichalcogenide films are also described. The substrate is exposed to a metal precursor and an oxidant to form a transition metal oxide film; the transition metal oxide film is exposed to a chalcogenide precursor to form the transition metal dichalcogenide film.

Abstract: Devices and methods for supplying oxygen to a patient for treatment of a wound or condition are provided. An outer housing includes a user contact surface with protrusions for penetrating biofilms of the wound and delivering oxygen produced by an onboard oxygen generating subsystem which electrochemically generates oxygen using an onboard power supply. The user contact surface and the protrusions are gas permeable to absorb and transmit generated oxygen into the wound to improve healing or treat the condition.

Abstract: Molybdenum(0) and coordination complexes are described. Methods for depositing molybdenum-containing films on a substrate are described. The substrate is exposed to a molybdenum precursor and a reactant to form the molybdenum-containing film (e.g., elemental molybdenum, molybdenum oxide, molybdenum carbide, molybdenum silicide, molybdenum disulfide, molybdenum nitride). The exposures can be sequential or simultaneous.

Abstract: Transition metal dichalcogenide films and methods for depositing transition metal dichalcogenide films on a substrate are described. Methods for converting transition metal oxide films to transition metal dichalcogenide films are also described. The substrate is exposed to a metal precursor and an oxidant to form a transition metal oxide film; the transition metal oxide film is exposed to a chalcogenide precursor to form the transition metal dichalcogenide film.

Abstract: Transition metal dichalcogenide films and methods for depositing transition metal dichalcogenide films on a substrate are described. Methods for converting transition metal oxide films to transition metal dichalcogenide films are also described. The substrate is exposed to a precursor and a chalcogenide reactant to form the transition metal dichalcogenide film. The exposures can be sequential or simultaneous.