Abstract: A process of depositing zirconium oxide (ZrO2) layers possessing dual properties of anti-reflection and passivation of silicon surfaces, including passivation of n-type and p-type silicon substrates. To grow a ZrO2 anti-reflection passivation layer, a precursor layer of zirconium oxide is spun on a silicon surface then dried, pyrolyzed and fired at suitable contact firing conditions, avoiding additional deposition. Thermal annealing in a hydrogen environment improves passivation quality of ZrO2 layer to a level 3-4 times higher than that of fired films alone. ZrO2 dielectric passivation layers exhibit improved passivation quality after illumination due to photo-enhanced passivation and higher passivation quality at higher thermal budget suitable for screen printed metal contact firing, unlike standard PECVD deposited passivation layers. The method is adaptable for fabrication of silicon solar cells and other structures utilizing passivated layers.

Abstract: A process of depositing zirconium oxide (ZrO2) layers possessing dual properties of anti-reflection and passivation of silicon surfaces, including passivation of n-type and p-type silicon substrates. To grow a ZrO2 anti-reflection passivation layer, a precursor layer of zirconium oxide is spun on a silicon surface then dried, pyrolyzed and fired at suitable contact firing conditions, avoiding additional deposition. Thermal annealing in a hydrogen environment improves passivation quality of ZrO2 layer to a level 3-4 times higher than that of fired films alone. ZrO2 dielectric passivation layers exhibit improved passivation quality after illumination due to photo-enhanced passivation and higher passivation quality at higher thermal budget suitable for screen printed metal contact firing, unlike standard PECVD deposited passivation layers. The method is adaptable for fabrication of silicon solar cells and other structures utilizing passivated layers.

Abstract: A plasma based deposition process to deposit thin film on the inner surfaces of the shaped objects such as plastic or metallic object like bottles, hollow tubes etc. at room temperature has been developed. In present invention uniform hydrogenated amorphous carbon (also called Diamond-Like Carbon, DLC) films on inner surfaces of plastic bottles is successfully deposited. Applications of such product include entire food and drug industries. There is a huge demand of polyethylene terephthalate (PET) or polyethylene naphthalate (PEN)) bottles, meant for the storage of potable water, carbonated soft drinks, wines, medicines etc. However, the higher cost prohibits their wide, spread use. The cheaper alternative is to use plastic bottles inside coated with chemically inert material such as Diamond-Like Carbon (DLC) will be commercially viable. Inventor process can be scaled up for mass production.

Abstract: A process for the preparation of nano structured silicon thin film using radio frequency (rf) plasma discharge useful for light emitting devices such as light emitting diode, laser etc. which allows precise control of the nanocrystal size of silicon and its uniform distribution without doping using a plasma processing for obtaining efficient photoluminescence at room temperature.

Abstract: A plasma based deposition process to deposit thin film on the inner surfaces of the shaped objects such as plastic or metallic object like bottles, hollow tubes etc. at room temperature has been developed. In present invention uniform hydrogenated amorphous carbon (also called Diamond-Like Carbon, DLC) films on inner surfaces of plastic bottles is successfully deposited. Applications of such product include entire food and drug industries. There is a huge demand of polyethylene terephthalate (PET) or polyethylene naphthalate (PEN)) bottles, meant for the storage of potable water, carbonated soft drinks, wines, medicines etc. However, the higher cost prohibits their wide, spread use. The cheaper alternative is to use plastic bottles inside coated with chemically inert material such as Diamond-Like Carbon (DLC) will be commercially viable. Inventor process can be scaled up for mass production.

Abstract: The present invention provides a process for the preparation of nano structured silicon thin film using radio frequency (rf) plasma discharge useful for light emitting devices such as light emitting diode, laser etc. The present invention shows the possibility of precise control of the nanocrystal size of silicon and its uniform distribution without doping using plasma processing for obtaining efficient photoluminescence at room temperature. Process developed to deposit the photo luminescent nano structured silicon thin films using plasma enhanced chemical vapour deposition technique can find use in electroluminescence devices like light emitting diodes (LEDs), LASER etc. This could also be advantageous for integration of silicon photonic devices with the existing silicon microelectronic technology.