Patents by Inventor Chandra MOHAPATRA
Chandra MOHAPATRA has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20240141498Abstract: The present disclosure relates to methods of correlating zones of processing chambers, and related systems and methods. In one implementation, a method of correlating zones of a processing chamber includes partitioning the processing volume into a plurality of zones along a first direction of the processing volume and a second direction of the processing volume. The second direction intersects the first direction. The plurality of zones have a first zone number (m), and a second zone number (n). The method includes determining a group number. The determining of the group number includes multiplying a first value by a second value. The first value correlates to a first zone number (m) of a plurality of zones and the second value correlates to a second zone number (n) of the plurality of zones. The method includes grouping the zones into groups having a number that is equal to the group number.Type: ApplicationFiled: December 20, 2022Publication date: May 2, 2024Inventors: Zuoming ZHU, Ala MORADIAN, Shu-Kwan LAU, Manjunath SUBBANNA, Errol Antonio C. SANCHEZ, Abhishek DUBE, Erika R. WARRICK, Martin Jeffrey SALINAS, Chandra MOHAPATRA
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Publication number: 20240018688Abstract: The present disclosure relates to batch processing apparatus, systems, and related methods and structures for epitaxial deposition operations. In one implementation, an apparatus for substrate processing includes a chamber body. The chamber body includes a processing volume, a plurality of gas inject passages, and an exhaust port. The apparatus includes one or more upper heat sources positioned above the processing volume, one or more lower heat sources positioned below the processing volume, and a pedestal assembly positioned in the processing volume. The apparatus includes one or more side heat sources positioned outwardly of the processing volume and configured to heat the processing volume through a side of the processing volume. The chamber body can be a dual-chamber body that includes a second processing volume, and the one or more side heat sources can be positioned outwardly of one or more of the processing volume or the second processing volume.Type: ApplicationFiled: December 2, 2022Publication date: January 18, 2024Inventors: Errol Antonio C. SANCHEZ, Shu-Kwan LAU, Zuoming ZHU, Saurabh CHOPRA, Abhishek DUBE, Chandra MOHAPATRA, Alexandros ANASTASOPOULOS, Martin Jeffrey SALINAS
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Publication number: 20230197848Abstract: Methods of forming a strained channel device utilizing dislocations disposed in source/drain structures are described. Those methods and structures may include forming a thin silicon germanium material in a source/drain opening of a device comprising silicon, wherein multiple dislocations are formed in the silicon germanium material. A source/drain material may be formed on the thin silicon germanium material, wherein the dislocations induce a tensile strain in a channel region of the device.Type: ApplicationFiled: February 21, 2023Publication date: June 22, 2023Inventors: Michael Jackson, Anand Murthy, Glenn Glass, Saurabh Morarka, Chandra Mohapatra
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Patent number: 11610995Abstract: Methods of forming a strained channel device utilizing dislocations disposed in source/drain structures are described. Those methods and structures may include forming a thin silicon germanium material in a source/drain opening of a device comprising silicon, wherein multiple dislocations are formed in the silicon germanium material. A source/drain material may be formed on the thin silicon germanium material, wherein the dislocations induce a tensile strain in a channel region of the device.Type: GrantFiled: September 9, 2022Date of Patent: March 21, 2023Assignee: Daedalus Prime LLCInventors: Michael Jackson, Anand Murthy, Glenn Glass, Saurabh Morarka, Chandra Mohapatra
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Publication number: 20230006063Abstract: Methods of forming a strained channel device utilizing dislocations disposed in source/drain structures are described. Those methods and structures may include forming a thin silicon germanium material in a source/drain opening of a device comprising silicon, wherein multiple dislocations are formed in the silicon germanium material. A source/drain material may be formed on the thin silicon germanium material, wherein the dislocations induce a tensile strain in a channel region of the device.Type: ApplicationFiled: September 9, 2022Publication date: January 5, 2023Inventors: Michael Jackson, Anand Murthy, Glenn Glass, Saurabh Morarka, Chandra Mohapatra
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Patent number: 11482618Abstract: Methods of forming a strained channel device utilizing dislocations disposed in source/drain structures are described. Those methods and structures may include forming a thin silicon germanium material in a source/drain opening of a device comprising silicon, wherein multiple dislocations are formed in the silicon germanium material. A source/drain material may be formed on the thin silicon germanium material, wherein the dislocations induce a tensile strain in a channel region of the device.Type: GrantFiled: April 19, 2022Date of Patent: October 25, 2022Assignee: Daedalus Prime LLCInventors: Michael Jackson, Anand Murthy, Glenn Glass, Saurabh Morarka, Chandra Mohapatra
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Patent number: 11411110Abstract: Methods of forming a strained channel device utilizing dislocations disposed in source/drain structures are described. Those methods and structures may include forming a thin silicon germanium material in a source/drain opening of a device comprising silicon, wherein multiple dislocations are formed in the silicon germanium material. A source/drain material may be formed on the thin silicon germanium material, wherein the dislocations induce a tensile strain in a channel region of the device.Type: GrantFiled: October 12, 2021Date of Patent: August 9, 2022Assignee: Intel CorporationInventors: Michael Jackson, Anand Murthy, Glenn Glass, Saurabh Morarka, Chandra Mohapatra
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Publication number: 20220238714Abstract: Methods of forming a strained channel device utilizing dislocations disposed in source/drain structures are described. Those methods and structures may include forming a thin silicon germanium material in a source/drain opening of a device comprising silicon, wherein multiple dislocations are formed in the silicon germanium material. A source/drain material may be formed on the thin silicon germanium material, wherein the dislocations induce a tensile strain in a channel region of the device.Type: ApplicationFiled: April 19, 2022Publication date: July 28, 2022Inventors: Michael Jackson, Anand Murthy, Glenn Glass, Saurabh Morarka, Chandra Mohapatra
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Publication number: 20220059699Abstract: Methods of forming a strained channel device utilizing dislocations disposed in source/drain structures are described. Those methods and structures may include forming a thin silicon germanium material in a source/drain opening of a device comprising silicon, wherein multiple dislocations are formed in the silicon germanium material. A source/drain material may be formed on the thin silicon germanium material, wherein the dislocations induce a tensile strain in a channel region of the device.Type: ApplicationFiled: October 12, 2021Publication date: February 24, 2022Inventors: Michael Jackson, Anand Murthy, Glenn Glass, Saurabh Morarka, Chandra Mohapatra
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Patent number: 11107920Abstract: Methods of forming a strained channel device utilizing dislocations disposed in source/drain structures are described. Those methods and structures may include forming a thin silicon germanium material in a source/drain opening of a device comprising silicon, wherein multiple dislocations are formed in the silicon germanium material. A source/drain material may be formed on the thin silicon germanium material, wherein the dislocations induce a tensile strain in a channel region of the device.Type: GrantFiled: July 11, 2019Date of Patent: August 31, 2021Assignee: Intel CorporationInventors: Michael Jackson, Anand Murthy, Glenn Glass, Saurabh Morarka, Chandra Mohapatra
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Patent number: 11004978Abstract: Methods of forming germanium channel structure are described. An embodiment includes forming a germanium fin on a substrate, wherein a portion of the germanium fin comprises a germanium channel region, forming a gate material on the germanium channel region, and forming a graded source/drain structure adjacent the germanium channel region. The graded source/drain structure comprises a germanium concentration that is higher adjacent the germanium channel region than at a source/drain contact region.Type: GrantFiled: February 7, 2020Date of Patent: May 11, 2021Assignee: Intel CorporationInventors: Glenn Glass, Karthik Jambunathan, Anand Murthy, Chandra Mohapatra, Seiyon Kim
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Publication number: 20200176601Abstract: Methods of forming germanium channel structure are described. An embodiment includes forming a germanium fin on a substrate, wherein a portion of the germanium fin comprises a germanium channel region, forming a gate material on the germanium channel region, and forming a graded source/drain structure adjacent the germanium channel region. The graded source/drain structure comprises a germanium concentration that is higher adjacent the germanium channel region than at a source/drain contact region.Type: ApplicationFiled: February 7, 2020Publication date: June 4, 2020Applicant: Intel CorporationInventors: Glenn Glass, Karthik Jambunathan, Anand Murthy, Chandra Mohapatra, Seiyon Kim
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Patent number: 10573750Abstract: Methods of forming germanium channel structure are described. An embodiment includes forming a germanium fin on a substrate, wherein a portion of the germanium fin comprises a germanium channel region, forming a gate material on the germanium channel region, and forming a graded source/drain structure adjacent the germanium channel region. The graded source/drain structure comprises a germanium concentration that is higher adjacent the germanium channel region than at a source/drain contact region.Type: GrantFiled: December 24, 2015Date of Patent: February 25, 2020Assignee: Intel CorporationInventors: Glenn Glass, Karthik Jambunathan, Anand Murthy, Chandra Mohapatra, Seiyon Kim
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Publication number: 20190334034Abstract: Methods of forming a strained channel device utilizing dislocations disposed in source/drain structures are described. Those methods and structures may include forming a thin silicon germanium material in a source/drain opening of a device comprising silicon, wherein multiple dislocations are formed in the silicon germanium material. A source/drain material may be formed on the thin silicon germanium material, wherein the dislocations induce a tensile strain in a channel region of the device.Type: ApplicationFiled: July 11, 2019Publication date: October 31, 2019Inventors: Michael JACKSON, Anand MURTHY, Glenn GLASS, Saurabh MORARKA, Chandra MOHAPATRA
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Patent number: 10396201Abstract: Methods of forming a strained channel device utilizing dislocations disposed in source/drain structures are described. Those methods and structures may include forming a thin silicon germanium material in a source/drain opening of a device comprising silicon, wherein multiple dislocations are formed in the silicon germanium material. A source/drain material may be formed on the thin silicon germanium material, wherein the dislocations induce a tensile strain in a channel region of the device.Type: GrantFiled: September 26, 2013Date of Patent: August 27, 2019Assignee: Intel CorporationInventors: Michael Jackson, Anand Murthy, Glenn Glass, Saurabh Morarka, Chandra Mohapatra
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Publication number: 20180261696Abstract: Methods of forming germanium channel structure are described. An embodiment includes forming a germanium fin on a substrate, wherein a portion of the germanium fin comprises a germanium channel region, forming a gate material on the germanium channel region, and forming a graded source/drain structure adjacent the germanium channel region. The graded source/drain structure comprises a germanium concentration that is higher adjacent the germanium channel region than at a source/drain contact region.Type: ApplicationFiled: December 24, 2015Publication date: September 13, 2018Inventors: Glenn Glass, Karthik Jambunathan, Anand Murthy, Chandra Mohapatra, Seiyon Kim
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Publication number: 20160204256Abstract: Methods of forming a strained channel device utilizing dislocations disposed in source/drain structures are described. Those methods and structures may include forming a thin silicon germanium material in a source/drain opening of a device comprising silicon, wherein multiple dislocations are formed in the silicon germanium material. A source/drain material may be formed on the thin silicon germanium material, wherein the dislocations induce a tensile strain in a channel region of the device.Type: ApplicationFiled: September 26, 2013Publication date: July 14, 2016Inventors: Michael JACKSON, Anand MURTHY, Glenn GLASS, Saurabh MORARKA, Chandra MOHAPATRA
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Patent number: 9005471Abstract: A heat transfer fluid comprising a carrier fluid and a nano-additive is provided. The heat transfer fluid is manufactured by dispersing the nano-additive in the carrier fluid. The nano-additive comprises nano-particles having a porous structure that provides dispersion stability of the nano-additive in the heat transfer fluid. The nano-additive structure has an aspect ratio of about 1.0 to about 10,000, a porosity of about 40% to about 85%, a density of about 0.4 g/cc to about 3.0 g/cc, an average pore diameter of about 0.1 nanometer to about 100 nanometers, and a specific surface area of about 1 m2/g to about 4000 m2/g. The nano-additive increases the heat transfer efficiency of the heat transfer fluid and also reduces the moisture content of the heat transfer fluid.Type: GrantFiled: January 19, 2011Date of Patent: April 14, 2015Assignee: Dynalene Inc.Inventor: Satish Chandra Mohapatra
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Publication number: 20110175017Abstract: A heat transfer fluid comprising a carrier fluid and a nano-additive is provided. The heat transfer fluid is manufactured by dispersing the nano-additive in the carrier fluid. The nano-additive comprises nano-particles having a porous structure that provides dispersion stability of the nano-additive in the heat transfer fluid. The nano-additive structure has an aspect ratio of about 1.0 to about 10,000, a porosity of about 40% to about 85%, a density of about 0.4 g/cc to about 3.0 g/cc, an average pore diameter of about 0.1 nanometer to about 100 nanometers, and a specific surface area of about 1 m2/g to about 4000 m2/g. The nano-additive increases the heat transfer efficiency of the heat transfer fluid and also reduces the moisture content of the heat transfer fluid.Type: ApplicationFiled: January 19, 2011Publication date: July 21, 2011Inventor: Satish Chandra Mohapatra
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Publication number: 20090301691Abstract: Disclosed herein is a method and system for transporting heat from a heat source to a heat sink. Containers containing a phase change material in a first phase, a guide track leading from the heat source to the heat sink, and a drive system are provided. The phase change material in the first phase in the containers absorbs the heat from the heat source on establishing thermal contact with the heat source and changes to a second phase. The drive system moves the containers containing the phase change material in the second phase to the heat sink along the guide track. The phase change material in the second phase in each of the containers transfers the absorbed heat to the heat sink and changes to the first phase. The heat source is cooled due to transportation of the heat from the heat source to the heat sink.Type: ApplicationFiled: June 9, 2009Publication date: December 10, 2009Inventor: Satish Chandra Mohapatra