Patents by Inventor Chandra P. Goradia

Chandra P. Goradia has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • High voltage V-groove solar cell
    Patent number: 4376872
    Abstract: A high voltage multijunction solar cell comprises a plurality of discrete voltage generating regions, or unit cells, which are formed in a single semiconductor wafer (10) and are connected together so that the voltages of the individual cells are additive. The unit cells comprise doped regions of opposite conductivity types (30, 32) separated by a gap. The method includes forming V-shaped grooves (16) in the wafer and thereafter orienting the wafer so that ions of one conductivity type can be implanted in one face (e.g., 16a) of the groove while the other face (e.g., 16b) is shielded. A metallization layer (22) is applied and selectively etched away to provide connections between the unit cells.
    Type: Grant
    Filed: March 18, 1982
    Date of Patent: March 15, 1983
    Assignee: The United States of America as represented by the Administrator of the National Aeronautics and Space Administration
    Inventors: John C. Evans, An-Ti Chai, Chandra P. Goradia
  • High voltage planar multijunction solar cell
    Patent number: 4341918
    Abstract: A high voltage multijunction solar cell is provided wherein a plurality of discrete voltage generating regions or unit cells are formed in a single generally planar semiconductor body (12). The unit cells comprise a doped regions (20, 22) of opposite conductivity type separated by a gap or undiffused region (24). Metal contacts (26) connect adjacent cells together in series so that the output voltages of the individual cells are additive. In some embodiments, doped field regions (14) separated by gap (16) overlie the unit cells but the cells may be formed in both faces of the wafer (FIG. 2).
    Type: Grant
    Filed: December 24, 1980
    Date of Patent: July 27, 1982
    Assignee: The United States of America as represented by the Administrator of the National Aeronautics and Space Administration
    Inventors: John C. Evans, Jr., An-Ti Chai, Chandra P. Goradia
  • Method of making a high voltage V-groove solar cell
    Patent number: 4335503
    Abstract: A method is provided for making a high voltage multijunction solar cell which comprises a plurality of discrete voltage generating regions, or unit cells, which are formed in a single semiconductor wafer (10) and are connected together so that the voltages of the individual cells are additive. The unit cells comprise doped regions of opposite conductivity types (30, 32) separated by a gap. The method includes forming V-shaped grooves (16) in the wafer and thereafter orienting the wafer so that ions of one conductivity type can be implanted in one face (e.g., 16a) of the groove while the other face (e.g., 16b) is shielded. A metallization layer (22) is applied and selectively etched away to provide connections between the unit cells.
    Type: Grant
    Filed: December 24, 1980
    Date of Patent: June 22, 1982
    Assignee: The United States of America as represented by the Administrator of the National Aeronautics and Space Administration
    Inventors: John C. Evans, Jr., An-Ti Chai, Chandra P. Goradia