Patents by Inventor Chandra Tiwari
Chandra Tiwari has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20240071932Abstract: A method used in forming memory circuitry comprises forming a stack comprising vertically-alternating first tiers and second tiers. The stack extends from a memory-array region into a stair-step region. The stack in the stair-step region comprises a cavity comprising a flight of stairs in a vertical cross-section along a first direction. The first tiers are conductive and the second tiers are insulative in a finished-circuitry construction. An insulating lining is formed in the cavity atop treads of the stairs and laterally-over sidewalls of the cavity that are along the first direction. Individual of the treads comprise conducting material of one of the conductive tiers in the finished-circuitry construction. The insulating lining is thicker in a bottom part of the cavity than over the sidewalls of the cavity that are above the bottom part. Insulative material is formed in the cavity directly above the insulating lining. Conductive vias are formed through the insulative material and the insulating lining.Type: ApplicationFiled: September 14, 2022Publication date: February 29, 2024Applicant: Micron Technology, Inc.Inventors: Jivaan Kishore Jhothiraman, Chandra Tiwari
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Publication number: 20240047346Abstract: Memory circuitry comprising strings of memory cells comprises a stack comprising vertically-alternating insulative tiers and conductive tiers. Channel-material strings of memory cells extend through the insulative tiers and the conductive tiers in a memory-array region. The insulative tiers and the conductive tiers extend from the memory-array region into a stair-step region. The stair-step region comprises a cavity comprising a flight of stairs. A lining has a specific resistance of at least 1×104 ohm·m at 20° C. atop treads of the stairs of the flight of stairs. Individual of the treads comprise conducting material of one of the conductive tiers. The lining comprises at least one of (a), (b), (c), and (d), where: (a): M1xM2yOz having a specific resistance of at least 1×104 ohm·m at 20° C.Type: ApplicationFiled: August 3, 2022Publication date: February 8, 2024Applicant: Micron Technology, Inc.Inventors: Rutuparna Narulkar, Chandra Tiwari, Dmitry Mikulik, Erica A. Ellingson, Yucheng Wang, Mathew Thomas
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Publication number: 20230292510Abstract: Some embodiments include an integrated assembly having a vertical stack of alternating insulative levels and conductive levels. The insulative levels have a same primary composition as one another. At least one of the insulative levels is compositionally different relative to others of the insulative levels due to said at least one of the insulative levels including dopant dispersed within the primary composition. An opening extends vertically through the stack. Some embodiments include methods of forming integrated assemblies.Type: ApplicationFiled: May 17, 2023Publication date: September 14, 2023Applicant: Micron Technology, Inc.Inventors: Ramey M. Abdelrahaman, Jeslin J. Wu, Chandra Tiwari, Kunal Shrotri, Swapnil Lengade
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Patent number: 11706924Abstract: Some embodiments include an integrated assembly having a vertical stack of alternating insulative levels and conductive levels. The insulative levels have a same primary composition as one another. At least one of the insulative levels is compositionally different relative to others of the insulative levels due to said at least one of the insulative levels including dopant dispersed within the primary composition. An opening extends vertically through the stack. Some embodiments include methods of forming integrated assemblies.Type: GrantFiled: April 12, 2022Date of Patent: July 18, 2023Assignee: Micron Technology, Inc.Inventors: Ramey M. Abdelrahaman, Jeslin J. Wu, Chandra Tiwari, Kunal Shrotri, Swapnil Lengade
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Patent number: 11700729Abstract: A memory array comprising strings of memory cells comprises laterally-spaced memory blocks individually comprising a vertical stack comprising alternating insulative tiers and conductive tiers. Operative channel-material strings of memory cells extend through the insulative tiers and the conductive tiers. Intervening material is laterally-between and longitudinally-along immediately-laterally-adjacent of the memory blocks. The intervening material comprises longitudinally-alternating first and second regions that individually have a vertically-elongated seam therein. The vertically-elongated seam in the first regions are taller than in the second regions. Additional embodiments, including method, are disclosed.Type: GrantFiled: November 12, 2021Date of Patent: July 11, 2023Assignee: Micron Technology, Inc.Inventors: Yi Hu, Ramey M. Abdelrahaman, Narula Bilik, Daniel Billingsley, Zhenyu Bo, Joan M. Kash, Matthew J. King, Andrew Li, David Neumeyer, Wei Yeeng Ng, Yung K. Pak, Chandra Tiwari, Yiping Wang, Lance Williamson, Xiaosong Zhang
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Publication number: 20230209827Abstract: In some embodiments, a memory array comprising strings of memory cells comprise laterally-spaced memory blocks individually comprising a vertical stack comprising alternating insulative tiers and conductive tiers. Operative channel-material strings of memory cells extend through the insulative tiers and the conductive tiers. Insulative pillars are laterally-between and longitudinally-along immediately-laterally-adjacent of the memory blocks. The pillars comprise vertically-spaced and radially-projecting insulative rings in the conductive tiers as compared to the insulative tiers. Other embodiments, including methods, are disclosed.Type: ApplicationFiled: March 3, 2023Publication date: June 29, 2023Applicant: Micron Technology, Inc.Inventors: Xiaosong Zhang, Yi Hu, Tom J. John, Wei Yeeng Ng, Chandra Tiwari
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Patent number: 11626423Abstract: In some embodiments, a memory array comprising strings of memory cells comprise laterally-spaced memory blocks individually comprising a vertical stack comprising alternating insulative tiers and conductive tiers. Operative channel-material strings of memory cells extend through the insulative tiers and the conductive tiers. Insulative pillars are laterally-between and longitudinally-along immediately-laterally-adjacent of the memory blocks. The pillars comprise vertically-spaced and radially-projecting insulative rings in the conductive tiers as compared to the insulative tiers. Other embodiments, including methods, are disclosed.Type: GrantFiled: July 12, 2021Date of Patent: April 11, 2023Assignee: Micron Technology, Inc.Inventors: Xiaosong Zhang, Yi Hu, Tom J. John, Wei Yeeng Ng, Chandra Tiwari
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Patent number: 11444093Abstract: A memory array comprising strings of memory cells comprises laterally-spaced memory blocks individually comprising a vertical stack comprising alternating insulative tiers and conductive tiers. A horizontal pattern of operative memory-cell pillars extends through the insulative tiers and the conductive tiers in individual of the memory blocks. The operative memory-cell pillars have intrinsic compressive mechanical stress. At least one dummy structure in the individual memory blocks extends through at least upper of the insulative tiers and the conductive tiers. The at least one dummy structure is at least one of (a) and (b), where (a): at a lateral edge of the horizontal pattern, and (b): at a longitudinal end of the horizontal pattern. The at least one dummy structure has intrinsic tensile mechanical stress. Other embodiments, including methods, are disclosed.Type: GrantFiled: January 10, 2020Date of Patent: September 13, 2022Assignee: Micron Technology, Inc.Inventor: Chandra Tiwari
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Publication number: 20220238553Abstract: Some embodiments include an integrated assembly having a vertical stack of alternating insulative levels and conductive levels. The insulative levels have a same primary composition as one another. At least one of the insulative levels is compositionally different relative to others of the insulative levels due to said at least one of the insulative levels including dopant dispersed within the primary composition. An opening extends vertically through the stack. Some embodiments include methods of forming integrated assemblies.Type: ApplicationFiled: April 12, 2022Publication date: July 28, 2022Applicant: Micron Technology, Inc.Inventors: Ramey M. Abdelrahaman, Jeslin J. Wu, Chandra Tiwari, Kunai Shrotri, Swapnil Lengade
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Patent number: 11329064Abstract: Some embodiments include an integrated assembly having a vertical stack of alternating insulative levels and conductive levels. The insulative levels have a same primary composition as one another. At least one of the insulative levels is compositionally different relative to others of the insulative levels due to said at least one of the insulative levels including dopant dispersed within the primary composition. An opening extends vertically through the stack. Some embodiments include methods of forming integrated assemblies.Type: GrantFiled: June 16, 2020Date of Patent: May 10, 2022Assignee: Micron Technology, Inc.Inventors: Ramey M. Abdelrahaman, Jeslin J. Wu, Chandra Tiwari, Kunal Shrotri, Swapnil Lengade
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Patent number: 11302712Abstract: A method used in forming integrated circuitry comprises forming a stack comprising vertically-alternating first tiers and second tiers. The stack comprises a cavity therein that comprises a stair-step structure. At least a portion of sidewalls of the cavity is lined with sacrificial material. Insulative material is formed in the cavity radially inward of the sacrificial material. At least some of the sacrificial material is removed from being between the cavity sidewalls and the insulative material to form a void space there-between. Insulator material is formed in at least some of the void space. Other embodiments, including structure independent of method, are disclosed.Type: GrantFiled: April 23, 2020Date of Patent: April 12, 2022Assignee: Micron Technology, Inc.Inventors: Chandra Tiwari, Jivaan Kishore Jhothiraman
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Publication number: 20220077169Abstract: A memory array comprising strings of memory cells comprises laterally-spaced memory blocks individually comprising a vertical stack comprising alternating insulative tiers and conductive tiers. Operative channel-material strings of memory cells extend through the insulative tiers and the conductive tiers. Intervening material is laterally-between and longitudinally-along immediately-laterally-adjacent of the memory blocks. The intervening material comprises longitudinally-alternating first and second regions that individually have a vertically-elongated seam therein. The vertically-elongated seam in the first regions are taller than in the second regions. Additional embodiments, including method, are disclosed.Type: ApplicationFiled: November 12, 2021Publication date: March 10, 2022Applicant: Micron Technology, Inc.Inventors: Yi Hu, Ramey M. Abdelrahaman, Narula Bilik, Daniel Billingsley, Zhenyu Bo, Joan M. Kash, Matthew J. King, Andrew Li, David Neumeyer, Wei Yeeng Ng, Yung K. Pak, Chandra Tiwari, Yiping Wang, Lance Williamson, Xiaosong Zhang
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Patent number: 11205654Abstract: A memory array comprising strings of memory cells comprises laterally-spaced memory blocks individually comprising a vertical stack comprising alternating insulative tiers and conductive tiers. Operative channel-material strings of memory cells extend through the insulative tiers and the conductive tiers. Intervening material is laterally-between and longitudinally-along immediately-laterally-adjacent of the memory blocks. The intervening material comprises longitudinally-alternating first and second regions that individually have a vertically-elongated seam therein. The vertically-elongated seam in the first regions are taller than in the second regions. Additional embodiments, including method, are disclosed.Type: GrantFiled: August 25, 2019Date of Patent: December 21, 2021Assignee: Micron Technology, Inc.Inventors: Yi Hu, Ramey M. Abdelrahaman, Narula Bilik, Daniel Billingsley, Zhenyu Bo, Joan M. Kash, Matthew J. King, Andrew Li, David Neumeyer, Wei Yeeng Ng, Yung K. Pak, Chandra Tiwari, Yiping Wang, Lance Williamson, Xiaosong Zhang
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Publication number: 20210391352Abstract: Some embodiments include an integrated assembly having a vertical stack of alternating insulative levels and conductive levels. The insulative levels have a same primary composition as one another. At least one of the insulative levels is compositionally different relative to others of the insulative levels due to said at least one of the insulative levels including dopant dispersed within the primary composition. An opening extends vertically through the stack. Some embodiments include methods of forming integrated assemblies.Type: ApplicationFiled: June 16, 2020Publication date: December 16, 2021Applicant: Micron Technology, Inc.Inventors: Ramey M. Abdelrahaman, Jeslin J. Wu, Chandra Tiwari, Kunal Shrotri, Swapnil Lengade
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Publication number: 20210335803Abstract: A method used in forming integrated circuitry comprises forming a stack comprising vertically-alternating first tiers and second tiers. The stack comprises a cavity therein that comprises a stair-step structure. At least a portion of sidewalls of the cavity is lined with sacrificial material. Insulative material is formed in the cavity radially inward of the sacrificial material. At least some of the sacrificial material is removed from being between the cavity sidewalls and the insulative material to form a void space there-between. Insulator material is formed in at least some of the void space. Other embodiments, including structure independent of method, are disclosed.Type: ApplicationFiled: April 23, 2020Publication date: October 28, 2021Applicant: Micron Technology, Inc.Inventors: Chandra Tiwari, Jivaan Kishore Jhothiraman
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Patent number: 11075219Abstract: In some embodiments, a memory array comprising strings of memory cells comprise laterally-spaced memory blocks individually comprising a vertical stack comprising alternating insulative tiers and conductive tiers. Operative channel-material strings of memory cells extend through the insulative tiers and the conductive tiers. Insulative pillars are laterally-between and longitudinally-along immediately-laterally-adjacent of the memory blocks. The pillars comprise vertically-spaced and radially-projecting insulative rings in the conductive tiers as compared to the insulative tiers. Other embodiments, including methods, are disclosed.Type: GrantFiled: August 20, 2019Date of Patent: July 27, 2021Assignee: Micron Technology, Inc.Inventors: Xiaosong Zhang, Yi Hu, Tom J. John, Wei Yeeng Ng, Chandra Tiwari
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Publication number: 20210217761Abstract: A memory array comprising strings of memory cells comprises laterally-spaced memory blocks individually comprising a vertical stack comprising alternating insulative tiers and conductive tiers. A horizontal pattern of operative memory-cell pillars extends through the insulative tiers and the conductive tiers in individual of the memory blocks. The operative memory-cell pillars have intrinsic compressive mechanical stress. At least one dummy structure in the individual memory blocks extends through at least upper of the insulative tiers and the conductive tiers. The at least one dummy structure is at least one of (a) and (b), where (a): at a lateral edge of the horizontal pattern, and (b): at a longitudinal end of the horizontal pattern. The at least one dummy structure has intrinsic tensile mechanical stress. Other embodiments, including methods, are disclosed.Type: ApplicationFiled: January 10, 2020Publication date: July 15, 2021Applicant: Micron Technology, Inc.Inventor: Chandra Tiwari
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Publication number: 20210057428Abstract: A memory array comprising strings of memory cells comprises laterally-spaced memory blocks individually comprising a vertical stack comprising alternating insulative tiers and conductive tiers. Operative channel-material strings of memory cells extend through the insulative tiers and the conductive tiers. Intervening material is laterally-between and longitudinally-along immediately-laterally-adjacent of the memory blocks. The intervening material comprises longitudinally-alternating first and second regions that individually have a vertically-elongated seam therein. The vertically-elongated seam in the first regions are taller than in the second regions. Additional embodiments, including method, are disclosed.Type: ApplicationFiled: August 25, 2019Publication date: February 25, 2021Applicant: Micron Technology, Inc.Inventors: Yi Hu, Ramey M. Abdelrahaman, Narula Bilik, Daniel Billingsley, Zhenyu Bo, Joan M. Kash, Matthew J. King, Andrew Li, David Neumeyer, Wei Yeeng Ng, Yung K. Pak, Chandra Tiwari, Yiping Wang, Lance Williamson, Xiaosong Zhang
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Publication number: 20210057433Abstract: In some embodiments, a memory array comprising strings of memory cells comprise laterally-spaced memory blocks individually comprising a vertical stack comprising alternating insulative tiers and conductive tiers. Operative channel-material strings of memory cells extend through the insulative tiers and the conductive tiers. Insulative pillars are laterally-between and longitudinally-along immediately-laterally-adjacent of the memory blocks. The pillars comprise vertically-spaced and radially-projecting insulative rings in the conductive tiers as compared to the insulative tiers. Other embodiments, including methods, are disclosed.Type: ApplicationFiled: August 20, 2019Publication date: February 25, 2021Applicant: Micron Technology, Inc.Inventors: Xiaosong Zhang, Yi Hu, Tom J. John, Wei Yeeng Ng, Chandra Tiwari
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Publication number: 20150286766Abstract: According to the present disclosure, the present invention discloses a methodology wherein the integrated circuit (IC) design process is independent of a pre-existing standard cell library with fixed or static driving strengths. The present invention utilizes a completely automated process for IC design utilizing a neural network based configurable cell library which generates design specific standard cells with desired driving strengths on the run. The driving strengths of the design specific standard cells are determined based on the constraints of the target IC design.Type: ApplicationFiled: October 25, 2013Publication date: October 8, 2015Inventors: Kunwar Singh, Satish Chandra Tiwari, Maneesha Gupta