Abstract: Exemplary deposition methods may include introducing hydrogen into a processing chamber, a powder disposed within a processing region of the processing chamber. The method may include striking a first plasma in the processing region, the first plasma including energetic hydrogen species. The method may include exposing the powder to the energetic hydrogen species in the processing region. The method may include chemically reducing the powder through a reaction of the powder with the energetic hydrogen species. The method may include removing process effluents including unreacted hydrogen from the processing region. The method may also include forming a layer of material on grains of the powder within the processing region.

Abstract: Apparatus for retaining a workpiece in a semiconductor processing chamber and method for fabricating the same. In one embodiment, a method for fabricating the apparatus includes providing a controlled resistivity boron nitride (CRBN) plate. A conductive layer is disposed on a portion of a lower surface of the CRBN plate to form at least one chucking electrode. A layer of boron nitride powder is disposed on the conductive layer and the lower surface of the CRBN plate. The CRBN plate, the conductive layer, and the boron nitride powder are hot pressed together to form the apparatus. In a second embodiment, a conductive electrode layer is deposited on a portion of a lower surface of the CRBN plate. A layer of pyrolytic boron nitride is deposited on the conductive layer and the lower surface of the CRBN plate to form the apparatus.

Abstract: Apparatus for supporting a substrate comprising a chuck body and a carbon-based surface treatment, deposited or otherwise created upon the support surface. The chuck body comprises a material selected from the group of zirconium, zirconium alloys, and metal/ceramic composites. The protective surface treatment may also contain silicon-based materials. The protective surface treatment is preferably about one to about five microns thick and has a coefficient of thermal expansion in the range of about 3 ppm per Celsius degree to about 6 ppm per Celsius degree. A concomitant method of fabricating a substrate support chuck comprises the steps of forming a chuck body having a support surface and depositing a carbon-based material on the support surface of the chuck body to form a protective surface treatment. The chuck body comprises a material selected from the group of zirconium, zirconium alloys, and metal/ceramic composites.

Abstract: Apparatus for retaining a workpiece in a semiconductor processing chamber and method for fabricating the same. In one embodiment, a method for fabricating the apparatus includes providing a controlled resistivity boron nitride (CRBN) plate. A conductive layer is disposed on a portion of a lower surface of the CRBN plate to form at least one chucking electrode. A layer of boron nitride powder is disposed on the conductive layer and the lower surface of the CRBN plate. The CRBN plate, the conductive layer, and the boron nitride powder are hot pressed together to form the apparatus. In a second embodiment, a conductive electrode layer is deposited on a portion of a lower surface of the CRBN plate. A layer of pyrolytic boron nitride is deposited on the conductive layer and the lower surface of the CRBN plate to form the apparatus.

Abstract: A process for depositing metal oxides by activated reactive evaporation (ARE) wherein deposition rate and film quality is controlled by reference to the relative amounts of metal and metal oxide present on the surface of the target material. The ratio of metal surface area to metal oxide surface area required to obtain high deposition rates is achieved by maintaining a relatively high concentration of oxygen in the reaction zone. This relative ratio of metal surface area to metal oxide surface area on target material provides a continuous indirect measure of film deposition rate and quality during the ARE process.

Abstract: An apparatus and process for reactive magnetron sputtering wherein film deposition is controlled by placing a grid located over the primary plasma and an auxiliary plasma adjacent to the substrate. The auxiliary plasma is produced using a positively biased d.c. probe. Control of the deposited film properties is provided by varying the d.c. probe voltage and open area of the wire grid.

Abstract: Process for producing cubic boron nitride films on a substrate by activated dissociation reduction-reaction. Boric acid in the condensed state is evaporated in a vacuum chamber from a resistance-heated evaporation source and ammonia gas is introduced into the chamber. The vapor of the boric acid and the molecules of the ammonia gas are ionized by a beam of low-energy electrons in the reaction zone between the resistance-heated evaporation source and the substrate. The ammonia gas reacts with the boric acid in a two-step process in which (1) the boric acid is reduced by the atomic hydrogen formed by the dissociation of ammonia, and (2) the resulting boron atoms react with the nitrogen atoms released by the dissociation of ammonia to form boron nitride which deposits as a film onthe substrate. This film has the cubic boron nitride structure and is ready for use without requiring post-deposition heat treatment.