Abstract: A CNT metal composite material is provided depositing a metal into a plurality of CNTs is provided including 3% by weight or more and 70% by weight or less of the CNTs, a region is arranged with the metal uniformly distributed in a scanning electron microscope image magnified ten thousand times and the length of the region is at least 1 ?m, a signal of the metal and a signal of carbon are not localized in a specific area in a two-dimensional elemental analysis image magnified ten thousand times, and a length of a region uniformly distributing the signal of the metal and the signal of carbon uniformly distributed is at least 1 ?m, an allowable current density is at 6×106 A/cm2 or more, and volume resistivity is 1×10?6 ?·cm or more and 5×10?3 ?·cm or less.

Abstract: A CNT metal composite material is provided depositing a metal into a plurality of CNTs is provided including 3% by weight or more and 70% by weight or less of the CNTs, a region is arranged with the metal uniformly distributed in a scanning electron microscope image magnified ten thousand times and the length of the region is at least 1 ?m, a signal of the metal and a signal of carbon are not localized in a specific area in a two-dimensional elemental analysis image magnified ten thousand times, and a length of a region uniformly distributing the signal of the metal and the signal of carbon uniformly distributed is at least 1 ?m, an allowable current density is at 6×106 A/cm2 or more, and volume resistivity is 1×10?6 ?·cm or more and 5×10?3 ?·cm or less.

Abstract: Provided are a CNT plating metal composite with high conductivity and wherein metal plating is plated onto the inside of a high-density CNT aggregate, and a production method for same. Also provided is a method for patterning the CNT plating metal composite. A CNT metal composite is provided including a CNT aggregate formed by adhering a metal onto a plurality of CNTs, wherein when an X-ray diffraction analysis is performed using a Cu-K? ray as a radiation source, an intensity ratio between a peak having the greatest intensity belonging to the metal and a peak having the greatest intensity belonging to an oxide of the metal is 10 or more and the volume resistance is 2×10?6 ?cm or more and 5×10?3 ?cm or less.

Abstract: An embodiment relates a method comprising creating a reversible change in an electrical property by adsorption of a gas by a composition, wherein the composition comprises a noble metal-containing nanoparticle and a single walled carbon nanotube. Another embodiment relates to a method comprising forming a composition comprising a noble metal-containing nanoparticle and a single walled carbon nanotube and forming a device containing the said composition. Yet another method relates to a device comprising a composition comprising a noble metal-containing nanoparticle and a single walled carbon nanotube on a silicon wafer, wherein the composition exhibits a reversible change in an electrical property by adsorption of a gas by the composition.

Abstract: An embodiment relates a method comprising creating a reversible change in an electrical property by adsorption of a gas by a composition, wherein the composition comprises a noble metal-containing nanoparticle and a single walled carbon nanotube. Another embodiment relates to a method comprising forming a composition comprising a noble metal-containing nanoparticle and a single walled carbon nanotube and forming a device containing the said composition. Yet another method relates to a device comprising a composition comprising a noble metal-containing nanoparticle and a single walled carbon nanotube on a silicon wafer, wherein the composition exhibits a reversible change in an electrical property by adsorption of a gas by the composition.