Patents by Inventor Chandrasekaran Kothandaraman

Chandrasekaran Kothandaraman has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Electromigration monitor
    Patent number: 10794948
    Abstract: An EM testing method includes forcing electrical current through EM monitor wiring arranged in close proximity to the perimeter of the TSV and measuring an electrical resistance drop across the EM monitor wiring. The method may further include determining if an electrical short exists between the EM monitor wiring and the TSV from the measured electrical resistance. The method may further include determining if an early electrical open or resistance increase exists within the EM monitoring wiring due to TSV induced proximity effect.
    Type: Grant
    Filed: November 7, 2017
    Date of Patent: October 6, 2020
    Assignee: International Business Machines Corporation
    Inventors: Fen Chen, Mukta G. Farooq, John A. Griesemer, Chandrasekaran Kothandaraman, John M. Safran, Timothy D. Sullivan, Ping-Chuan Wang, Lijuan Zhang
  • Electromigration monitor
    Patent number: 10677833
    Abstract: A structure, such as a wafer, semiconductor chip, integrated circuit, or the like, includes a through silicon via (TSV) and an electromigration (EM) monitor. The TSV) includes at least one perimeter sidewall. The EM monitor includes a first EM wire separated from the perimeter sidewall of the TSV by a dielectric.
    Type: Grant
    Filed: November 7, 2017
    Date of Patent: June 9, 2020
    Assignee: International Business Machines Corporation
    Inventors: Fen Chen, Mukta G. Farooq, John A. Griesemer, Chandrasekaran Kothandaraman, John M. Safran, Timothy D. Sullivan, Ping-Chuan Wang, Lijuan Zhang
  • ELECTROMIGRATION MONITOR
    Publication number: 20180074110
    Abstract: An EM testing method includes forcing electrical current through EM monitor wiring arranged in close proximity to the perimeter of the TSV and measuring an electrical resistance drop across the EM monitor wiring. The method may further include determining if an electrical short exists between the EM monitor wiring and the TSV from the measured electrical resistance. The method may further include determining if an early electrical open or resistance increase exists within the EM monitoring wiring due to TSV induced proximity effect.
    Type: Application
    Filed: November 7, 2017
    Publication date: March 15, 2018
    Inventors: Fen Chen, Mukta G. Farooq, John A. Griesemer, Chandrasekaran Kothandaraman, John M. Safran, Timothy D. Sullivan, Ping-Chuan Wang, Lijuan Zhang
  • ELECTROMIGRATION MONITOR
    Publication number: 20180074111
    Abstract: A structure, such as a wafer, semiconductor chip, integrated circuit, or the like, includes a through silicon via (TSV) and an electromigration (EM) monitor. The TSV) incldues at least one perimeter sidewall.
    Type: Application
    Filed: November 7, 2017
    Publication date: March 15, 2018
    Inventors: Fen Chen, Mukta G. Farooq, John A. Griesemer, Chandrasekaran Kothandaraman, John M. Safran, Timothy D. Sullivan, Ping-Chuan Wang, Lijuan Zhang
  • Electromigration monitor
    Patent number: 9891261
    Abstract: A structure, such as a wafer, chip, IC, design structure, etc., includes a through silicon via (TSV) and an electromigration (EM) monitor. The TSV extends completely through a semiconductor chip and the EM monitor includes a plurality of EM wires proximately arranged about the TSV perimeter. An EM testing method includes forcing electrical current through EM monitor wiring arranged in close proximity to the perimeter of the TSV, measuring an electrical resistance drop across the EM monitor wiring, determining if an electrical short exists between the EM monitor wiring and the TSV from the measured electrical resistance, and/or determining if an early electrical open or resistance increase exists within the EM monitoring wiring due to TSV induced proximity effect.
    Type: Grant
    Filed: June 30, 2014
    Date of Patent: February 13, 2018
    Assignee: International Business Machines Corporation
    Inventors: Fen Chen, Mukta G. Farooq, John A. Griesemer, Chandrasekaran Kothandaraman, John M. Safran, Timothy D. Sullivan, Ping-Chuan Wang, Lijuan Zhang
  • Low degradation MRAM encapsulation process using silicon-rich silicon nitride film
    Patent number: 9515252
    Abstract: A method of making a magnetic random access memory (MRAM) device comprising forming a magnetic tunnel junction on an electrode, the magnetic tunnel junction comprising a first reference layer, a free layer, and a first tunnel barrier layer; and depositing an encapsulating silicon nitride film on and along sidewalls of the magnetic tunnel junction; wherein the silicon nitride film has a N:Si ratio from 0.1 to 1. An MRAM device made by the above method is also disclosed.
    Type: Grant
    Filed: December 29, 2015
    Date of Patent: December 6, 2016
    Assignees: INTERNATIONAL BUSINESS MACHINES CORPORATION, SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Anthony J. Annunziata, Chandrasekaran Kothandaraman, Gen P. Lauer, JungHyuk Lee, Nathan P. Marchack, Deborah A. Neumayer, Eugene J. O'Sullivan, Jeong-Heon Park
  • ELECTROMIGRATION MONITOR
    Publication number: 20150380326
    Abstract: A structure, such as a wafer, chip, IC, design structure, etc., includes a through silicon via (TSV) and an electromigration (EM) monitor. The TSV extends completely through a semiconductor chip and the EM monitor includes a plurality of EM wires proximately arranged about the TSV perimeter. An EM testing method includes forcing electrical current through EM monitor wiring arranged in close proximity to the perimeter of the TSV, measuring an electrical resistance drop across the EM monitor wiring, determining if an electrical short exists between the EM monitor wiring and the TSV from the measured electrical resistance, and/or determining if an early electrical open or resistance increase exists within the EM monitoring wiring due to TSV induced proximity effect.
    Type: Application
    Filed: June 30, 2014
    Publication date: December 31, 2015
    Inventors: Fen Chen, Mukta G. Farooq, John A. Griesemer, Chandrasekaran Kothandaraman, John M. Safran, Timothy D. Sullivan, Ping-Chuan Wang, Lijuan Zhang