Patents by Inventor Chandrasekhar Reddy Gorla

Chandrasekhar Reddy Gorla has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Balanced method for programming multi-layer cell memories
    Patent number: 8934292
    Abstract: Improved methods for programming multi-level metal oxide memory cells balance applied voltage and current to provide improved performance. Set programming, which transitions the memory cell to a lower resistance state, is accomplished by determining an appropriate programming voltage and current limit for the objective resistance state to be achieved in the programming and then applying a pulse having the determined set electrical characteristics. Reset programming, which transitions the memory cell to a higher resistance state, is accomplished by determining an appropriate programming voltage and optionally current limit for the state to be achieved in the programming and then applying a pulse having the determined electrical characteristics. The algorithm used to determine the appropriate set or reset programming voltage and current values provides for effective programming without stressing the memory element.
    Type: Grant
    Filed: March 18, 2011
    Date of Patent: January 13, 2015
    Assignee: SanDisk 3D LLC
    Inventors: Xiying Costa, Yibo Nian, Roy Scheuerlein, Tz-Yi Liu, Chandrasekhar Reddy Gorla
  • Balanced Method for Programming Multi-Layer Cell Memories
    Publication number: 20120236624
    Abstract: Improved methods for programming multi-level metal oxide memory cells balance applied voltage and current to provide improved performance. Set programming, which transitions the memory cell to a lower resistance state, is accomplished by determining an appropriate programming voltage and current limit for the objective resistance state to be achieved in the programming and then applying a pulse having the determined set electrical characteristics. Reset programming, which transitions the memory cell to a higher resistance state, is accomplished by determining an appropriate programming voltage and optionally current limit for the state to be achieved in the programming and then applying a pulse having the determined electrical characteristics. The algorithm used to determine the appropriate set or reset programming voltage and current values provides for effective programming without stressing the memory element.
    Type: Application
    Filed: March 18, 2011
    Publication date: September 20, 2012
    Applicant: SanDisk 3D LLC
    Inventors: Xiying Costa, Yibo Nian, Roy Scheuerlein, Tz-Yi Liu, Chandrasekhar Reddy Gorla