Abstract: A display device includes a first substrate, a light-emitting element, a light conversion layer, and a color filter layer. The light-emitting element is disposed on the first substrate. The light conversion layer is disposed on the light-emitting element. In addition, the color filter layer is overlapped the light-emitting element and the light conversion layer.

Abstract: A method for manufacturing a circuit board, includes: stacking a first peelable film on a second peelable film, and disposing fluffy carbon nanotubes between the first peelable film and the second peelable film, thereby obtaining a carbon nanotube layer; pressing the first peelable film, the carbon nanotube layer, and the second peelable film to compact the fluffy carbon nanotubes, thereby obtaining a thermal conductive layer; removing the first peelable film, and disposing a first adhesive layer, a first dielectric layer, and a first circuit layer on a side of the thermal conductive layer away from the second peelable film; removing the second peelable film, and disposing a second adhesive layer, a second dielectric layer, and a second circuit layer on a side of the thermal conductive layer away from the first adhesive layer; mounting an electronic component on the first circuit layer.

Abstract: A method to form a transistor device with a recessed gate structure is provided. In one embodiment, a gate structure is formed overlying a device region and an isolation structure. The gate structure separates a device doping well along a first direction with a pair of recess regions disposed on opposite sides of the device region in a second direction perpendicular to the first direction. A pair of source/drain regions in is formed the device region on opposite sides of the gate structure. A sidewall spacer is formed extending along sidewalls of the gate structure, where a top surface of the sidewall spacer is substantially flush with the top surface of the gate structure. A resistive protection layer is then formed on the sidewall spacer and covering the pair of recess regions.

Abstract: Semiconductor devices having improved heat dissipation and methods of forming the same are disclosed. In an embodiment, a device includes a first transistor structure; a front-side interconnect structure on a front-side of the first transistor structure, the front-side interconnect structure including front-side conductive lines; a backside interconnect structure on a backside of the first transistor structure, the backside interconnect structure including backside conductive lines, the backside conductive lines having line widths greater than line widths of the front-side conductive lines; and a first heat dissipation substrate coupled to the backside interconnect structure.

Abstract: A glass element having a thickness from 25 ?m to 125 ?m, a first primary surface, a second primary surface, and a compressive stress region extending from the first primary surface to a first depth, the region defined by a compressive stress GI of at least about 100 MPa at the first primary surface. Further, the glass element has a stress profile such that it does not fail when it is subject to 200,000 cycles of bending to a target bend radius of from 1 mm to 20 mm, by the parallel plate method. Still further, the glass element has a puncture resistance of greater than about 1.5 kgf when the first primary surface of the glass element is loaded with a tungsten carbide ball having a diameter of 1.5 mm.

Abstract: An integrated circuit structure includes a package component, which further includes a non-porous dielectric layer having a first porosity, and a porous dielectric layer over and contacting the non-porous dielectric layer, wherein the porous dielectric layer has a second porosity higher than the first porosity. A bond pad penetrates through the non-porous dielectric layer and the porous dielectric layer. A dielectric barrier layer is overlying, and in contact with, the porous dielectric layer. The bond pad is exposed through the dielectric barrier layer. The dielectric barrier layer has a planar top surface. The bond pad has a planar top surface higher than a bottom surface of the dielectric barrier layer.

Abstract: The present invention provides a control method of a processor, wherein the control method comprises the steps of: transmitting image data of a first frame to an integrated circuit, wherein the first frame corresponds to a first frame rate; determining a second frame rate of a second frame next to the first frame; determining if a difference between the second frame rate and the first frame rate belongs to a large scale frame rate adjustment or a small scale frame rate adjustment; if the difference between the second frame rate and the first frame rate belongs to the large scale frame rate adjustment, using a first mode to transmit image data of the second frame; and if the difference between the second frame rate and the first frame rate belongs to the small scale frame rate adjustment, using a second mode to transmit image data of the second frame.

Abstract: A compound for an organic optoelectronic device, a composition for an organic optoelectronic device, an organic optoelectronic device, and a display device, the compound for an organic optoelectronic device being represented by the following Chemical Formula 1:

Abstract: A signal processor includes a signal receiving circuit, a pre-processing circuit, a period acquisition circuit, and a decoding circuit. The signal receiving circuit is configured to receive an input signal. The pre-processing circuit is configured to generate a square wave signal according to the input signal. The period acquisition circuit is configured to capture several periods of the square wave signal. The several signal periods includes several signal period groups, and each of the several signal period groups includes at least two signal periods of the several signal periods. The at least two signal periods are adjacent to each other. The decoding circuit is coupled to the period acquisition circuit and is configured to perform decoding according to a time length and a number of times of voltage value change of the several signal period groups to obtain a decoding result.

Abstract: A transistor device with a recessed gate structure is provided. In some embodiments, the transistor device comprises a semiconductor substrate comprising a device region surrounded by an isolation structure and a pair of source/drain regions disposed in the device region and laterally spaced apart one from another in a first direction. A gate structure overlies the device region and the isolation structure and arranged between the pair of source/drain regions. The gate structure comprises a pair of recess regions disposed on opposite sides of the device region in a second direction perpendicular to the first direction. A channel region is disposed in the device region underneath the gate structure. The channel region has a channel width extending in the second direction from one of the recess regions to the other one of the recess regions.

Abstract: A display device includes a substrate, a light-emitting element, and a transistor. The substrate has a top surface. The light-emitting element is disposed on the substrate, and includes a first electrode and a second electrode. The transistor is disposed on the substrate and electrically connected to the light-emitting element. The transistor includes a gate electrode and a semiconductor layer. The semiconductor layer includes an overlapping portion overlapped with the gate electrode. The first electrode and the second electrode of the light-emitting element do not overlap with the overlapping portion along a direction perpendicular to the top surface of the substrate.

Abstract: There is provided a smoke detector including a substrate, a light source and a light sensor. The light source and the light sensor are arranged adjacently on the substrate. The substrate is arranged with an asymmetric structure to cause an illumination region of the light source to deviate toward the light sensor thereby increasing a ratio of light intensity reflected by smoke with respect to reference light intensity.

Abstract: Embodiments include nanostructure devices and methods of forming nanostructure devices which include a treatment process to expand a sidewall spacer material to close a seam in the sidewall spacer material after deposition. The treatment process includes oxidation anneal and heat anneal to expand the sidewall spacer material and crosslink the open seam to form a closed seam, lower k-value, and decrease density.

Abstract: A memory device including a first semiconductor die and a memory cube mounted on and connected with the first semiconductor die is described. The memory cube includes multiple stacked tiers, and each tier of the multiple stacked tiers includes second semiconductor dies laterally wrapped by an encapsulant and a redistribution structure disposed on the second semiconductor dies and the encapsulant. The second semiconductor dies of the multiple stacked tiers are electrically connected with the first semiconductor die through the redistribution structures in the multiple stacked tiers.

Abstract: An integrated circuit (IC) applicable to performing system protection through dynamic voltage change may include a monitoring circuit, at least one power voltage generation circuit and a voltage adjustment circuit. The monitoring circuit monitors at least one security checking result of a security engine to determine whether at least one security event occurs. The at least one power voltage generation circuit generates at least one internal power voltage within the IC according to at least one input voltage received from outside of the IC, to provide the internal power voltage to at least one internal component of the IC. In response to occurrence of the at least one security event, the voltage adjustment circuit controls the at least one power voltage generation circuit to dynamically adjust the at least one internal power voltage, to control the internal power voltage randomly exceed predetermined voltage range thereof, thereby performing the system protection.

Abstract: An English pronunciation assessment method includes: receiving an audio file including an English speech and a text transcript corresponding to the English speech; inputting audio signal to one or more acoustic models to obtain phonetic information of each phone in each word, wherein the one or more acoustic models are trained with speeches spoken by native speakers and further with speeches spoken by non-native speakers without labeling out mispronunciations, such that a pronunciation error is detected more accurately based on the obtained phonetic information; extracting time series features of each word; inputting the extracted time series features of each word, the obtained phonetic information of each phone in each word, and the audio signal included in the audio file to a lexical stress model to obtain misplaced lexical stress in each of words in the English speech with different number of syllables without expanding short words to cause input approximation.

Abstract: An integrated circuit structure includes a package component, which further includes a non-porous dielectric layer having a first porosity, and a porous dielectric layer over and contacting the non-porous dielectric layer, wherein the porous dielectric layer has a second porosity higher than the first porosity. A bond pad penetrates through the non-porous dielectric layer and the porous dielectric layer. A dielectric barrier layer is overlying, and in contact with, the porous dielectric layer. The bond pad is exposed through the dielectric barrier layer. The dielectric barrier layer has a planar top surface. The bond pad has a planar top surface higher than a bottom surface of the dielectric barrier layer.

Abstract: There is provided a smoke detector including a light source, a reflective surface, a light sensor and a processor. The light sensor receives reflected light when the light source emits light toward the reflective surface, and generates a reference detection signal when there is no smoke. The processor receives the detection signal from the light sensor, and automatically selects a set of predetermined condition thresholds according to a profile of the detection signal to be compared with the detection signal thereby determining whether to generate an alarm according to the comparison result.

Abstract: Systems, apparatus, and methods of manufacturing an article using electroadhesion technology for the pick-up and release of materials, respectively.

Abstract: Manufacturing and assembly of a shoe or a portion of a shoe is enhanced by automated placement and assembly of shoe parts. For example, a part-recognition system analyzes an image of a shoe part to identify the part and determine a location of the part. Once the part is identified and located, the part can be manipulated by an automated manufacturing tool.