Patents by Inventor Chang Auck Choi
Chang Auck Choi has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
-
Patent number: 10113928Abstract: Provided is a pressure sensor including a substrate having a cavity therein, a partition wall disposed in the substrate to surround the cavity, a substrate insulation layer disposed on the top surface of the substrate to cover the cavity, a sensing unit disposed on the substrate insulation layer, and an encapsulation layer disposed on the substrate insulation layer to cover the sensing unit. The cavity may extend from a top surface toward a bottom surface of the substrate, the partition wall may have an inner sidewall exposed by the cavity, and at least a portion of the sensing unit may overlap the cavity when viewed in a plan view.Type: GrantFiled: August 11, 2016Date of Patent: October 30, 2018Assignee: ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTEInventors: Chang Han Je, Woo Seok Yang, Sung Q Lee, Chang Auck Choi
-
Publication number: 20170241853Abstract: Provided is a pressure sensor including a substrate having a cavity therein, a partition wall disposed in the substrate to surround the cavity, a substrate insulation layer disposed on the top surface of the substrate to cover the cavity, a sensing unit disposed on the substrate insulation layer, and an encapsulation layer disposed on the substrate insulation layer to cover the sensing unit. The cavity may extend from a top surface toward a bottom surface of the substrate, the partition wall may have an inner sidewall exposed by the cavity, and at least a portion of the sensing unit may overlap the cavity when viewed in a plan view.Type: ApplicationFiled: August 11, 2016Publication date: August 24, 2017Inventors: Chang Han JE, Woo Seok YANG, Sung Q LEE, Chang Auck CHOI
-
Patent number: 8638110Abstract: There is provided a high resolution circuit for converting a capacitance-to-time deviation including a capacitance deviation detecting unit generating two detection signals having a phase difference corresponding to variations of capacitance of an micro electro mechanical system (MEMS) sensor; a capacitance deviation amplifying unit dividing frequencies of the two detection signals to amplify the phase difference corresponding to the capacitance deviation; and a time signal generating unit generating a time signal having a pulse width corresponding to the amplified phase difference.Type: GrantFiled: July 21, 2008Date of Patent: January 28, 2014Assignee: Electronics and Telecommunications Research InstituteInventors: Sung Sik Lee, Myung Lae Lee, Gunn Hwang, Chang Auck Choi
-
Patent number: 8613287Abstract: An apparatus for preventing stiction of a three-dimensional MEMS (microelectromechanical system) microstructure, the apparatus including: a substrate; and a plurality of micro projections formed on a top surface of the substrate with a predetermined height in such a way that a cleaning solution flowing out from the microstructure disposed thereabove is discharged.Type: GrantFiled: April 14, 2008Date of Patent: December 24, 2013Assignee: Electronics and Telecommunications Research InstituteInventors: Chang Han Je, Myung Lae Lee, Sung Hae Jung, Gunn Hwang, Chang Auck Choi
-
Patent number: 8359758Abstract: A three-dimensional inclination angle calculation circuit is provided. The three-dimensional inclination angle calculation circuit includes: X-axis, Y-axis, and Z-axis vibration sensors which change X-axis, Y-axis, and Z-axis electrostatic capacitances according to three-dimensional positions of a measured plane with respect to a reference plane, respectively; X-axis, Y-axis, and Z-axis position value acquisition units which acquire X-axis, Y-axis, and Z-axis position values corresponding to the X-axis, Y-axis, and Z-axis electrostatic capacitances, respectively; and an inclination angle calculation unit which calculates an inclination angle of the measured plane with respect to the reference plane based on the X-axis, Y-axis, and Z-axis position values. Accordingly, it is possible to very easily calculate an inclination angle according to a three-dimensional position of a to-be-measured apparatus by using an existing vibration sensor.Type: GrantFiled: April 15, 2008Date of Patent: January 29, 2013Assignee: Electronics and Telecommunications Research InstituteInventors: Sung Sik Lee, Myung Lae Lee, Chang Han Je, Gunn Hwang, Chang Auck Choi
-
Patent number: 8261617Abstract: A micro semiconductor-type pressure sensor and a manufacturing method thereof are provided. The micro semi-conductor-type pressure sensor is implemented by etching a cavity-formation region of a substrate to form a plurality of trenches, oxidizing the plurality of trenches through a thermal oxidation process to form a cavity-formation oxide layer, forming a membrane-formation material layer on upper portions of the cavity-formation oxide layer and the substrate, forming a plurality of etching holes in the membrane-formation material layer, removing the cavity-formation oxide layer through the plurality of etching holes to form a cavity buried in the substrate, forming a membrane reinforcing layer on an upper portion of the membrane-formation material layer to form a membrane for closing the cavity, and forming sensitive films made of a piezoresisive material on an upper portion of the membrane.Type: GrantFiled: April 21, 2008Date of Patent: September 11, 2012Assignee: Electronics and Telecomunications Research InstituteInventors: Chang Auck Choi, Chang Han Je, Gunn Hwang, Youn Tae Kim, Sung Hae Jung, Myung Lae Lee, Sung Sik Lee, Seok Hwan Moon
-
Patent number: 8263426Abstract: Provided is a high-sensitivity MEMS-type z-axis vibration sensor, which may sense z-axis vibration by differentially shifting an electric capacitance between a doped upper silicon layer and an upper electrode from positive to negative or vice versa when center mass of a doped polysilicon layer is moved due to z-axis vibration. Particularly, since a part of the doped upper silicon layer is additionally connected to the center mass of the doped polysilicon layer, and thus an error made by the center mass of the doped polysilicon layer is minimized, it may sensitively respond to weak vibration of low frequency such as seismic waves. Accordingly, since the high-sensitivity MEMS-type z-axis vibration sensor sensitively responds to a small amount of vibration in a low frequency band, it can be applied to a seismograph sensing seismic waves of low frequency which have a very small amount of vibration and a low vibration speed.Type: GrantFiled: July 24, 2009Date of Patent: September 11, 2012Assignee: Electronics and Telecommunications Research InstituteInventors: Sang Choon Ko, Chi Hoon Jun, Byoung Gon Yu, Chang Auck Choi
-
Patent number: 8143579Abstract: A resistive material for a bolometer, a bolometer for an infrared detector using the material, and a method of manufacturing the bolometer are provided. In the resistive material, at least one element selected from the group consisting of nitrogen (N), oxygen (O) and germanium (Ge) is included in antimony (Sb). The resistive material has superior properties such as high temperature coefficient of resistance (TCR), low resistivity, a low noise constant, and is easily formed in a thin film structure by sputtering typically used in a complementary metal-oxide semiconductor (CMOS) process, so that it can be used as a resistor for the bolometer for an uncooled infrared detector, and thus provide the infrared detector with superior temperature precision.Type: GrantFiled: August 19, 2010Date of Patent: March 27, 2012Assignee: Electronics and Telecommunications Research InstituteInventors: Woo Seok Yang, Sang Hoon Cheon, Seong Mok Cho, Ho Jun Ryu, Chang Auck Choi
-
Patent number: 8113054Abstract: A conventional capacitive accelerometer has a limitation in reducing a distance between a sensing electrode and a reference electrode, and requires a complex process and a separate method of correcting a clearance difference caused by a process error. However, the capacitive accelerometer of the present invention has high sensitivity, can be simply manufactured by maintaining a very narrow distance between a reference electrode and a sensing electrode, and can make it unnecessary to individually correct each manufactured accelerometer by removing or drastically reducing a functional difference due to a process error.Type: GrantFiled: December 5, 2007Date of Patent: February 14, 2012Assignee: Electronics and Telecommunications Research InstituteInventors: Chang-Han Je, Gunn Hwang, Sung-Hae Jung, Myung-Lae Lee, Chang-Auck Choi
-
Patent number: 8047074Abstract: Provided are a humidity sensor and a method of manufacturing the same. The humidity sensor has high sensitivity, quick response time, improved temperature characteristics, low hysteresis and excellent durability. Moreover, for the humidity sensor, a humidity sensitive layer may be formed of various materials. The humidity sensor may be manufactured in a small size on a large scale.Type: GrantFiled: November 12, 2009Date of Patent: November 1, 2011Assignee: Electronics and Telecommunications Research InstituteInventors: Chi Hoon Jun, Sang Choon Ko, Chang Auck Choi, Byoung Gon Yu
-
Patent number: 8035176Abstract: Provided are a Micro Electro-Mechanical System (MEMS) package and a method of packaging the MEMS package. The MEMS package includes: a MEMS device including MEMS structures formed on a substrate, first pad electrodes driving the MEMS structures, first sealing parts formed at an edge of the substrate, and connectors formed on the first pad electrodes and the first sealing parts; and a MEMS driving electronic device including second pad electrodes and second sealing parts respectively corresponding to the first pad electrodes and the first sealing parts to be sealed with and bonded to the MEMS device through the connectors to form an air gap having a predetermined width.Type: GrantFiled: July 25, 2007Date of Patent: October 11, 2011Assignee: Electronics and Telecommunications Research InstituteInventors: Sung-Hae Jung, Myung-Lae Lee, Gunn Hwang, Chang-Kyu Kim, Chang-Han Je, Chang-Auck Choi
-
Patent number: 7997137Abstract: There is provided a bidirectional readout circuit for detecting direction and amplitude of an oscillation sensed at a capacitive microelectromechanical system (MEMS) accelerometer, the bidirectional readout circuit converting capacitance changes of the capacitive MEMS accelerometer into a time change amount by using high resolution capacitance-to-time conversion technology and outputting the time change amount as the direction and the amplitude of the oscillation by using time-to-digital conversion (TDC) technology, thereby detecting not only the amplitude of the oscillation but also the direction thereof, which is capable of being applied to various MEMS sensors.Type: GrantFiled: July 3, 2008Date of Patent: August 16, 2011Assignee: Electronics and Telecommunications Research InstituteInventors: Sung Sik Lee, Ji Man Park, Myung Lae Lee, Sung Hae Jung, Chang Han Je, Gunn Hwang, Chang Auck Choi
-
Publication number: 20110192040Abstract: A three-dimensional inclination angle calculation circuit is provided. The three-dimensional inclination angle calculation circuit includes: X-axis, Y-axis, and Z-axis vibration sensors which change X-axis, Y-axis, and Z-axis electrostatic capacitances according to three-dimensional positions of a measured plane with respect to a reference plane, respectively; X-axis, Y-axis, and Z-axis position value acquisition units which acquire X-axis, Y-axis, and Z-axis position values corresponding to the X-axis, Y-axis, and Z-axis electrostatic capacitances, respectively; and an inclination angle calculation unit which calculates an inclination angle of the measured plane with respect to the reference plane based on the X-axis, Y-axis, and Z-axis position values. Accordingly, it is possible to very easily calculate an inclination angle according to a three-dimensional position of a to-be-measured apparatus by using an existing vibration sensor.Type: ApplicationFiled: April 15, 2008Publication date: August 11, 2011Inventors: Sung Sik Lee, Myung Lae Lee, Chang Han Je, Gunn Hwang, Chang Auck Choi
-
Publication number: 20110186089Abstract: An apparatus for preventing stiction of a three-dimensional MEMS (microelectromechanical system) microstructure, the apparatus including: a substrate; and a plurality of micro projections formed on a top surface of the substrate with a predetermined height in such a way that a cleaning solution flowing out from the microstructure disposed thereabove is discharged.Type: ApplicationFiled: April 14, 2008Publication date: August 4, 2011Inventors: Chang Han Je, Myung Lae Lee, Sung Hae Jung, Gunn Hwang, Chang Auck Choi
-
Patent number: 7975550Abstract: There is provided a micromachined sensor for measuring a vibration, based on silicone micromachining technology, in which a conductor having elasticity is connected to masses moving due to a force generated by the vibration and the vibration is measured by using induced electromotive force generated due to the conductor moving in a magnetic field.Type: GrantFiled: April 29, 2008Date of Patent: July 12, 2011Assignee: Electronics and Telecommunications Research InstituteInventors: Myung Lae Lee, Chang Han Je, Sung Sik Lee, Sung Hae Jung, Chang Auck Choi, Gunn Hwang
-
Patent number: 7971633Abstract: Provided is a loop type micro heat transport device including: a lower plate having a reservoir for storing operating fluid at its upper surface, an evaporating part spaced apart from the reservoir to evaporate the operating fluid, and a condensing part for condensing vapor evaporated from the evaporating part; and an upper plate engaged with an upper surface of the lower plate and formed at a position corresponding to the evaporating part and the condensing part, and including a vapor space having a vapor line through which the vapor evaporated from the evaporating part is transported to the condensing part, wherein the operating fluid is circulated through the reservoir, the evaporating part, and the condensing part. Therefore, it is possible to remarkably improve productivity since its simple structure helps to make the manufacture simple, as well as to improve cooling performance and enabling long distance heat transport.Type: GrantFiled: December 9, 2005Date of Patent: July 5, 2011Assignee: Electronics and Telecommunications Research InstituteInventors: Seok Hwan Moon, Gunn Hwang, Sung Weon Kang, Chang Auck Choi
-
Publication number: 20110159669Abstract: Provided is a method of depositing an amorphous silicon thin film by chemical vapor deposition (CVD) to prevent bubble defect occurring when an amorphous silicon thin film is deposited on a substrate contaminated by air exposure. The deposition method includes cleaning a surface of the contaminated substrate with a reaction gas activated by plasma and depositing an amorphous silicon thin film on the cleaned substrate. Here, a vacuum state is maintained from the substrate cleaning step to the thin film deposition step in order to prevent contamination of the surface of the cleaned substrate by re-exposure to air.Type: ApplicationFiled: September 18, 2009Publication date: June 30, 2011Applicant: ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITInventors: Woo Seok Yang, Seong mok Cho, Ho Jun Ryu, Sang Hoon Cheon, Byoung Gon Yu, Chang Auck Choi
-
Publication number: 20110133758Abstract: There is provided a high resolution circuit for converting a capacitance-to-time deviation including a capacitance deviation detecting unit generating two detection signals having a phase difference corresponding to variations of capacitance of an micro electro mechanical system (MEMS) sensor; a capacitance deviation amplifying unit dividing frequencies of the two detection signals to amplify the phase difference corresponding to the capacitance deviation; and a time signal generating unit generating a time signal having a pulse width corresponding to the amplified phase difference.Type: ApplicationFiled: July 21, 2008Publication date: June 9, 2011Applicant: Electronics and Telecommunications Research InstituteInventors: Sung Sik Lee, Myung Lae Lee, Gunn Hwang, Chang Auck Choi
-
Patent number: 7948564Abstract: The present invention relates to a programmable mask used in a photolithography process for fabricating a biomolecule array and a method of fabricating a biomolecule array using the same and, more particularly, to a programmable mask which can increase a contrast ratio of transmittance versus shielding of light incident to a liquid crystal which constitutes each pixel by irradiating parallel ultraviolet (“UV”) light generated from an external parallel light exposure device to a certain cell and using a vertically aligned liquid crystal panel or an LC panel having no spacer, and a method of fabricating a biomolecule array using the same.Type: GrantFiled: June 17, 2008Date of Patent: May 24, 2011Assignee: Electronics and Telecommunications Research InstituteInventors: Moon Youn Jung, Dong Ho Shin, Young Jun Kim, Se Ho Park, Hyeon Bong Pyo, Chang Auck Choi
-
Patent number: RE44356Abstract: A method of manufacturing a tunable wavelength optical filter. The method includes steps of forming a first sacrificial oxide film for floating a lower mirror on a semiconductor substrate; sequentially laminating conductive silicon films and oxide films for defining a mirror region on the first sacrificial oxide film in a multi-layer and laminating another conductive silicon film to form a lower mirror; sequentially laminating conductive silicon films and oxide films for defining the mirror region on a second sacrificial oxide film in a multi-layer and laminating another conductive silicon film to form an upper mirror and forming an optical tuning space between the lower mirror and the upper mirror and etching the first sacrificial oxide film and the second sacrificial oxide film such that the lower mirror is floated on the semiconductor substrate.Type: GrantFiled: July 1, 2010Date of Patent: July 9, 2013Assignee: Electronics and Telecommunications Research InstituteInventors: Chang Auck Choi, Myung Lae Lee, Chang Kyu Kim, Chi Hoon Jun, Youn Tae Kim