Patents by Inventor Chang Bong YEON

Chang Bong YEON has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20230313372
    Abstract: The present invention relates to a growth inhibitor for forming a thin film, a method of forming a thin film using the growth inhibitor, and a semiconductor substrate fabricated by the method. More specifically, the growth inhibitor for forming a thin film of the present invention is a compound represented by Chemical Formula 1: AnBmXoYiZj. In Chemical Formula 1, A is carbon or silicon; B is hydrogen or an alkyl group having 1 to 3 carbon atoms; X includes one or more of fluorine (F), chlorine (Cl), bromine (Br), and iodine (I); Y and Z independently include one or more selected from the group consisting of oxygen, nitrogen, sulfur, and fluorine and are different from each other; n is an integer from 1 to 15; o is an integer greater than or equal to 1; m is 0 to 2n+1; and i and j are integers from 0 to 3.
    Type: Application
    Filed: July 16, 2021
    Publication date: October 5, 2023
    Inventors: Chang Bong YEON, Jin Hee KIM, Jae Sun JUNG, Jong Moon KIM, Seung Hyun LEE, Seok Jong LEE
  • Publication number: 20230257881
    Abstract: The present invention relates to a growth inhibitor for forming a thin film, a method of forming a thin film using the growth inhibitor, and a semiconductor substrate fabricated by the method. More particularly, the growth inhibitor for forming a thin film according to the present invention is a compound represented by Chemical Formula 1: AnBmXoYiZj. A is carbon or silicon; B is hydrogen or an alkyl group having 1 to 3 carbon atoms; X is a leaving group having a bond dissociation energy of 50 to 350 KJ/mol; Y and Z independently include one or more selected from the group consisting of oxygen, nitrogen, sulfur, and fluorine and are different from each other; n is an integer from 1 to 15; o is an integer greater than or equal to 1; m is 0 to 2n+1; and i and j are integers from 0 to 3.
    Type: Application
    Filed: July 16, 2021
    Publication date: August 17, 2023
    Inventors: Chang Bong YEON, Jin Hee KIM, Jae Sun JUNG, Jong Moon KIM, Seung Hyun LEE, Seok Jong LEE
  • Publication number: 20230251565
    Abstract: The present invention relates to a growth inhibitor for forming a pellicle-protective thin film, a method of forming a pellicle-protective thin film using the growth inhibitor, and a mask fabricated by the method. More particularly, the growth inhibitor for forming a pellicle-protective thin film according to the present invention is a compound presented by Chemical Formula 1: AnBmXoYiZj. A is carbon or silicon; B is hydrogen or an alkyl group having 1 to 3 carbon atoms; X includes one or more of fluorine (F), chlorine (Cl), bromine (Br), and iodine (I); Y and Z independently include one or more selected from the group consisting of oxygen, nitrogen, sulfur, and fluorine and are different from each other; n is an integer from 1 to 15; o is an integer greater than or equal to 1; m is 0 to 2n+1; and i and j are integers from 0 to 3.
    Type: Application
    Filed: July 6, 2021
    Publication date: August 10, 2023
    Inventors: Chang Bong YEON, Jae Sun JUNG, Seung Chul DO, Ho Lim WANG
  • Publication number: 20230175119
    Abstract: The present invention relates to a precursor for forming a thin film. The precursor is in a liquid state under conditions of 20° C. and 1 bar and includes 20 to 100% by weight of a coordination compound represented by Chemical Formula 1 below and 0 to 80% by weight of an alkyl cyanide containing an alkyl group having 1 to 15 carbon atoms: [Chemical Formula 1] MXnLmYz. M is niobium, tungsten, or molybdenum; X is a halogen element; n is 1 to 6; L is an alkyl cyanide containing an alkyl group having 1 to 15 carbon atoms, or a linear or cyclic saturated hydrocarbon having 3 to 15 carbon atoms and substituted with one or more nitrogen, oxygen, phosphorus, or sulfur atoms; m is 1 to 3; bonded Y is an amine; z is an integer from 0 to 4; and n+z is 3 to 6.
    Type: Application
    Filed: June 22, 2021
    Publication date: June 8, 2023
    Inventors: Chang Bong YEON, Jae Sun JUNG, Hye Ran BYUN, Tae Young EOM, Seok Jong LEE
  • Publication number: 20160064503
    Abstract: An electronic device includes a substrate. A lower electrode is disposed on the substrate and has a flat portion and protrusions. An intermediate layer is on the lower electrode. An upper electrode is on the intermediate layer. The lower electrode includes an alloy of a first metal and a second metal. The protrusions have a content ratio of the second metal higher than that of the flat portion.
    Type: Application
    Filed: November 9, 2015
    Publication date: March 3, 2016
    Applicant: ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE
    Inventors: Sun Jin YUN, Chang Bong YEON, Yoo Jeong LEE, JungWook LIM
  • Patent number: 9257579
    Abstract: Provided is a method of fabricating an electronic device. The method according to the present inventive concept may include forming a lower electrode having a flat portion and protrusions on a substrate, forming an intermediate layer on the lower electrode, and forming an upper electrode on the intermediate layer. The forming of the lower electrode may include forming a conductive film by depositing a first metal on the substrate, and depositing a second metal on the conductive film to prepare an alloy of the first metal and the second metal.
    Type: Grant
    Filed: July 29, 2013
    Date of Patent: February 9, 2016
    Assignee: ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE
    Inventors: Sun Jin Yun, Chang Bong Yeon, Yoo Jeong Lee, JungWook Lim
  • Publication number: 20140026963
    Abstract: Provided is a method of fabricating an electronic device. The method according to the present inventive concept may include forming a lower electrode having a flat portion and protrusions on a substrate, forming an intermediate layer on the lower electrode, and forming an upper electrode on the intermediate layer. The forming of the lower electrode may include forming a conductive film by depositing a first metal on the substrate, and depositing a second metal on the conductive film to prepare an alloy of the first metal and the second metal.
    Type: Application
    Filed: July 29, 2013
    Publication date: January 30, 2014
    Applicant: Electronics and Telecommunications Research Institute
    Inventors: Sun Jin YUN, Chang Bong YEON, Yoo Jeong LEE, JungWook LIM