Patents by Inventor Chang Boo

Chang Boo has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Process for the preparation of optically pure 4-hydroxy-2-oxo-1-pyrrolidine acetamide
    Publication number: 20070185337
    Abstract: A process for the preparation of chiral 4-hydroxy-2-oxo-1-pyrrolidine acetamide includes adding sodium cyanide together with citric acid to a solution of chiral epichlorohydrin to obtain chiral 3-chloro-2-hydroxypropionitrile by ring opening reaction of the chiral epichlorohydrin, reacting the obtained product with an alcohol containing hydrochloride gas to obtain chiral 4-chloro-3-hydroxybutyric acid ester, and reacting the obtained product in a presence of a base with glycinamide or with glycine ester accompanied by ammonolysis with ammonia to produce the targeted chiral 4-hydroxy-2-oxo-1-pyrrolidine acetamide.
    Type: Application
    Filed: May 25, 2005
    Publication date: August 9, 2007
    Applicants: AHN-GOOK PHARMACEUTICAL CO., LTD., RSTECH CORPORATION
    Inventors: Seong-Jin Kim, Chung-woo Lim, Chang Boo, Jung-hoon Oh, Ki Kim, Jae Lee, Duk Won
  • Thin film deposition method including using atomic layer deposition without purging between introducing the gaseous reactants
    Patent number: 6723595
    Abstract: The present invention discloses a method of fabricating a thin film in a chamber where a heater and a suscepter are located. The method includes the steps of disposing an object on the susceptor so as to form the thin film thereon; heating the object; a first sub-step of introducing a first gaseous reactant into the first chamber such that the first gaseous reactant is absorbed on the object to form an absorption layer; a second sub-step of introducing a second gaseous reactant into the first chamber such that the second gaseous reactant reacts with the absorption layer absorbed on the object; and a third sub-step of introducing a reducing gas into the first camber such that the reducing gas reduces by-products and impurities of the first and second gaseous reactants.
    Type: Grant
    Filed: February 1, 2002
    Date of Patent: April 20, 2004
    Assignee: Jusung Engineering Co., Ltd.
    Inventor: Chang-Boo Park
  • Thin film deposition method
    Publication number: 20020160585
    Abstract: The present invention discloses a method of fabricating a thin film in a chamber where a heater and a suscepter are located. The method includes the steps of disposing an object on the susceptor so as to form the thin film thereon; heating the object; a first sub-step of introducing a first gaseous reactant into the first chamber such that the first gaseous reactant is absorbed on the object to form an absorption layer; a second sub-step of introducing a second gaseous reactant into the first chamber such that the second gaseous reactant reacts with the absorption layer absorbed on the object; and a third sub-step of introducing a reducing gas into the first camber such that the reducing gas reduces by-products and impurities of the first and second gaseous reactants.
    Type: Application
    Filed: February 1, 2002
    Publication date: October 31, 2002
    Inventor: Chang-Boo Park