Abstract: An electrode assembly includes a radical unit in which electrodes and separators are alternately stacked, the radical unit having a structure in which one electrode is stacked at the uppermost end. An auxiliary unit is provided with a separation sheet disposed at the uppermost end side of the radical unit. The separation sheet includes a separation part disposed at the uppermost end side of the radical unit and a side surface protection part connected to each of side surfaces of the separation part and folded to contact a side portion of the radical unit to cover the side portion of the radical unit.

Abstract: A method for manufacturing a vehicle wheel includes: a casting process of manufacturing the wheel in a one-piece body having a forming end and a temporary flange protruding at inner and outer sides of the wheel, respectively, wherein the one-piece body further includes a resonance chamber forming groove; a primary shape machining process of forming a stepped part at an outer circumferential side of the resonance chamber forming groove; a flow forming process of bending the forming end to be seated on the stepped part; a friction stir welding process of integrally bonding a portion where the forming end and the stepped part are in close contact with each other; a fine machining process of removing the temporary flange; and a sound-absorbing hole machining process of forming a sound-absorbing hole for communicating between the resonance chamber and an interior space of a tire in the forming end.

Abstract: A sensor device includes: a sensor panel including sensors arranged in a matrix form and sensor lines electrically connected to the sensors one-to-one; and a sensor driver configured to receive sensing signals from the sensors through the sensor lines, wherein the sensor driver is configured to simultaneously receive a first sensing signal from a first sensor using a first reference signal and a second sensing signal from a second sensor using a second reference signal, wherein the first reference signal and the second reference signal have a same waveform, a phase of the second reference signal is different from a phase of the first reference signal, and wherein a phase of the second sensing signal is different from a phase of the first sensing signal.

Abstract: In various embodiments, an antenna array may comprise a dielectric; a first patch antenna disposed on a first region of the dielectric; a second patch antenna disposed on a second region of the dielectric; and a ground layer including a first sub-ground layer in contact with a lower portion of the first region of the dielectric, a third sub-ground layer in contact with a lower portion of the second region of the dielectric, and a second sub-ground layer spaced apart from a lower portion between the first region and the second region of the dielectric.

Abstract: An optical beam steering device may include a tunable laser diode configured to emit laser beams and an antenna that includes a grating structure and is configured to convert the laser beams to a linear light source based on the grating structure. The tunable laser diode may emit a first laser beam having a first wavelength, and emit a second laser beam having a second wavelength, the second wavelength different from the first wavelength. The antenna may receive the first laser beam and, in response, output a first linear light source having a first emission angle with a surface of the antenna. The antenna may further receive the second laser beam and, in response, output a second linear light source having a second emission angle with the surface of the antenna, the second emission angle different from the first angle.

Abstract: The bi-directional optical integrated circuit device array includes a plurality of bi-directional optical integrated circuit unit devices integrated on a substrate and arranged in two-dimensions. Each of the bi-directional optical integrated circuit unit devices includes a single wavelength laser light source integrated on the substrate, a bi-directional optical device integrated on the substrate and optically connected to the laser light source, and an antenna integrated on the substrate and optically connected to the bi-directional optical device.

Abstract: An optical beam steering device may include a tunable laser diode configured to emit laser beams and an antenna that includes a grating structure and is configured to convert the laser beams to a linear light source based on the grating structure. The tunable laser diode may emit a first laser beam having a first wavelength, and emit a second laser beam having a second wavelength, the second wavelength different from the first wavelength. The antenna may receive the first laser beam and, in response, output a first linear light source having a first emission angle with a surface of the antenna. The antenna may further receive the second laser beam and, in response, output a second linear light source having a second emission angle with the surface of the antenna, the second emission angle different from the first angle.

Abstract: An optical beam steering device may include a tunable laser diode configured to emit laser beams and an antenna that includes a grating structure and is configured to convert the laser beams to a linear light source based on the grating structure. The tunable laser diode may emit a first laser beam having a first wavelength, and emit a second laser beam having a second wavelength, the second wavelength different from the first wavelength. The antenna may receive the first laser beam and, in response, output a first linear light source having a first emission angle with a surface of the antenna. The antenna may further receive the second laser beam and, in response, output a second linear light source having a second emission angle with the surface of the antenna, the second emission angle different from the first angle.

Abstract: The bi-directional optical integrated circuit device array includes a plurality of bi-directional optical integrated circuit unit devices integrated on a substrate and arranged in two-dimensions. Each of the bi-directional optical integrated circuit unit devices includes a single wavelength laser light source integrated on the substrate, a bi-directional optical device integrated on the substrate and optically connected to the laser light source, and an antenna integrated on the substrate and optically connected to the bi-directional optical device.

Abstract: An optical beam steering device may include a tunable laser diode configured to emit laser beams and an antenna that includes a grating structure and is configured to convert the laser beams to a linear light source based on the grating structure. The tunable laser diode may emit a first laser beam having a first wavelength, and emit a second laser beam having a second wavelength, the second wavelength different from the first wavelength. The antenna may receive the first laser beam and, in response, output a first linear light source having a first emission angle with a surface of the antenna. The antenna may further receive the second laser beam and, in response, output a second linear light source having a second emission angle with the surface of the antenna, the second emission angle different from the first angle.

Abstract: A light modulation device includes a dielectric antenna and a refractive-index-variable layer which faces the dielectric antenna and comprises a material having a refractive index that changes according to a signal. A light may be modulated, since resonance characteristics of the dielectric antenna are controlled according to a refractive-index change of the refractive-index-variable layer.

Abstract: A light modulation device includes a dielectric antenna and a refractive-index-variable layer which faces the dielectric antenna and comprises a material having a refractive index that changes according to a signal. A light may be modulated, since resonance characteristics of the dielectric antenna are controlled according to a refractive-index change of the refractive-index-variable layer.

Abstract: In one embodiment, the memory element may include a first electrode, a second electrode spaced apart from the first electrode, a memory layer between the first electrode and the second electrode, and an auxiliary layer between the memory layer and the second electrode. The auxiliary layer provides a multi-bit memory characteristic to the memory layer.

Abstract: Bipolar memory cells and a memory device including the same are provided, the bipolar memory cells include two bipolar memory layers having opposite programming directions. The two bipolar memory layers may be connected to each other via an intermediate electrode interposed therebetween. The two bipolar memory layers may have the same structure or opposite structures.

Abstract: In a method of operating a semiconductor device, a resistance value of a variable resistance element is changed from a first resistance value to a second resistance value by applying a first voltage to the variable resistance element; and a first current that flows through the variable resistance element is sensed. A second voltage for changing the resistance value of the variable resistance element from the second resistance value to the first resistance value is modulated based on a dispersion of the first current, and the first voltage is re-applied to the variable resistance element based on a dispersion of the first current.

Abstract: A method of driving a nonvolatile memory device including applying a reset voltage to a unit memory cell, reading a reset current of the unit memory cell, confirming whether the reset current is within a first current range, if the reset current is not within the first current range, changing the reset voltage and applying a changed reset voltage or applying again the reset voltage to the unit memory cell after applying a set voltage to the unit memory cell, if the reset current is within the first current range, confirming whether a difference between the present reset current and an immediately previous set current is within a second current range, and, if the difference is not within the second current range, applying the reset voltage or applying again the reset voltage to the unit memory cell after applying a set voltage to the unit memory cell.

Abstract: Provided are a semiconductor device and a method of manufacturing the same. The semiconductor device includes: a memory array on a first substrate; and a peripheral circuit on a second substrate, wherein the first substrate and the second substrate may be attached to each other so that the memory array and the peripheral circuit are electrically connected to each other.

Abstract: A method of operating a semiconductor device that includes a variable resistance device, the method including applying a first voltage to the variable resistance device so as to change a resistance value of the variable resistance device from a first resistance value to a second resistance value that is different from the first resistance value; sensing first current flowing through the variable resistance device to which the first voltage is applied; determining whether the first current falls within a predetermined range of current; and if the first current does not fall within the first range of current, applying an additional first voltage that is equal to the first voltage to the variable resistance device.

Abstract: A resistive memory device includes a first electrode and a first insulation layer arranged on the first electrode. A portion of the first electrode is exposed through a first hole in the first insulation layer. A first variable resistance layer contacts the exposed portion of the first electrode and extends on the first insulation layer around the first hole. A first switching device electrically connects to the first resistive switching layer.

Abstract: A non-volatile memory element includes: a memory layer disposed between a first electrode and a second electrode; and a buffer layer disposed between the memory layer and the first electrode. The memory layer includes a first material layer and a second material layer. The first material layer and the second material layer are configured to exchange ionic species to change a resistance state of the memory layer.