Abstract: An optical beam steering device may include a tunable laser diode configured to emit laser beams and an antenna that includes a grating structure and is configured to convert the laser beams to a linear light source based on the grating structure. The tunable laser diode may emit a first laser beam having a first wavelength, and emit a second laser beam having a second wavelength, the second wavelength different from the first wavelength. The antenna may receive the first laser beam and, in response, output a first linear light source having a first emission angle with a surface of the antenna. The antenna may further receive the second laser beam and, in response, output a second linear light source having a second emission angle with the surface of the antenna, the second emission angle different from the first angle.

Abstract: The bi-directional optical integrated circuit device array includes a plurality of bi-directional optical integrated circuit unit devices integrated on a substrate and arranged in two-dimensions. Each of the bi-directional optical integrated circuit unit devices includes a single wavelength laser light source integrated on the substrate, a bi-directional optical device integrated on the substrate and optically connected to the laser light source, and an antenna integrated on the substrate and optically connected to the bi-directional optical device.

Abstract: An optical beam steering device may include a tunable laser diode configured to emit laser beams and an antenna that includes a grating structure and is configured to convert the laser beams to a linear light source based on the grating structure. The tunable laser diode may emit a first laser beam having a first wavelength, and emit a second laser beam having a second wavelength, the second wavelength different from the first wavelength. The antenna may receive the first laser beam and, in response, output a first linear light source having a first emission angle with a surface of the antenna. The antenna may further receive the second laser beam and, in response, output a second linear light source having a second emission angle with the surface of the antenna, the second emission angle different from the first angle.

Abstract: An optical beam steering device may include a tunable laser diode configured to emit laser beams and an antenna that includes a grating structure and is configured to convert the laser beams to a linear light source based on the grating structure. The tunable laser diode may emit a first laser beam having a first wavelength, and emit a second laser beam having a second wavelength, the second wavelength different from the first wavelength. The antenna may receive the first laser beam and, in response, output a first linear light source having a first emission angle with a surface of the antenna. The antenna may further receive the second laser beam and, in response, output a second linear light source having a second emission angle with the surface of the antenna, the second emission angle different from the first angle.

Abstract: An optical beam steering device may include a tunable laser diode configured to emit laser beams and an antenna that includes a grating structure and is configured to convert the laser beams to a linear light source based on the grating structure. The tunable laser diode may emit a first laser beam having a first wavelength, and emit a second laser beam having a second wavelength, the second wavelength different from the first wavelength. The antenna may receive the first laser beam and, in response, output a first linear light source having a first emission angle with a surface of the antenna. The antenna may further receive the second laser beam and, in response, output a second linear light source having a second emission angle with the surface of the antenna, the second emission angle different from the first angle.

Abstract: The bi-directional optical integrated circuit device array includes a plurality of bi-directional optical integrated circuit unit devices integrated on a substrate and arranged in two-dimensions. Each of the bi-directional optical integrated circuit unit devices includes a single wavelength laser light source integrated on the substrate, a bi-directional optical device integrated on the substrate and optically connected to the laser light source, and an antenna integrated on the substrate and optically connected to the bi-directional optical device.

Abstract: A light modulation device includes a dielectric antenna and a refractive-index-variable layer which faces the dielectric antenna and comprises a material having a refractive index that changes according to a signal. A light may be modulated, since resonance characteristics of the dielectric antenna are controlled according to a refractive-index change of the refractive-index-variable layer.

Abstract: A light modulation device includes a dielectric antenna and a refractive-index-variable layer which faces the dielectric antenna and comprises a material having a refractive index that changes according to a signal. A light may be modulated, since resonance characteristics of the dielectric antenna are controlled according to a refractive-index change of the refractive-index-variable layer.

Abstract: In one embodiment, the memory element may include a first electrode, a second electrode spaced apart from the first electrode, a memory layer between the first electrode and the second electrode, and an auxiliary layer between the memory layer and the second electrode. The auxiliary layer provides a multi-bit memory characteristic to the memory layer.

Abstract: Bipolar memory cells and a memory device including the same are provided, the bipolar memory cells include two bipolar memory layers having opposite programming directions. The two bipolar memory layers may be connected to each other via an intermediate electrode interposed therebetween. The two bipolar memory layers may have the same structure or opposite structures.

Abstract: In a method of operating a semiconductor device, a resistance value of a variable resistance element is changed from a first resistance value to a second resistance value by applying a first voltage to the variable resistance element; and a first current that flows through the variable resistance element is sensed. A second voltage for changing the resistance value of the variable resistance element from the second resistance value to the first resistance value is modulated based on a dispersion of the first current, and the first voltage is re-applied to the variable resistance element based on a dispersion of the first current.

Abstract: A method of driving a nonvolatile memory device including applying a reset voltage to a unit memory cell, reading a reset current of the unit memory cell, confirming whether the reset current is within a first current range, if the reset current is not within the first current range, changing the reset voltage and applying a changed reset voltage or applying again the reset voltage to the unit memory cell after applying a set voltage to the unit memory cell, if the reset current is within the first current range, confirming whether a difference between the present reset current and an immediately previous set current is within a second current range, and, if the difference is not within the second current range, applying the reset voltage or applying again the reset voltage to the unit memory cell after applying a set voltage to the unit memory cell.

Abstract: Provided are a semiconductor device and a method of manufacturing the same. The semiconductor device includes: a memory array on a first substrate; and a peripheral circuit on a second substrate, wherein the first substrate and the second substrate may be attached to each other so that the memory array and the peripheral circuit are electrically connected to each other.

Abstract: A method of operating a semiconductor device that includes a variable resistance device, the method including applying a first voltage to the variable resistance device so as to change a resistance value of the variable resistance device from a first resistance value to a second resistance value that is different from the first resistance value; sensing first current flowing through the variable resistance device to which the first voltage is applied; determining whether the first current falls within a predetermined range of current; and if the first current does not fall within the first range of current, applying an additional first voltage that is equal to the first voltage to the variable resistance device.

Abstract: A resistive memory device includes a first electrode and a first insulation layer arranged on the first electrode. A portion of the first electrode is exposed through a first hole in the first insulation layer. A first variable resistance layer contacts the exposed portion of the first electrode and extends on the first insulation layer around the first hole. A first switching device electrically connects to the first resistive switching layer.

Abstract: According to an example embodiment, a method of operating a semiconductor device having a variable resistance device includes: applying a first voltage to the variable resistance device to change a resistance value of the variable resistance device from a first resistance value to a second resistance value that is different from the first resistance value; sensing a first current flowing through the variable resistance device to which the first voltage is applied; determining a second voltage used for changing the variable resistance device from the second resistance value to the first resistance value, based on a dispersion of the sensed first current; and applying the determined second voltage to the variable resistance device.

Abstract: A non-volatile memory element includes: a memory layer disposed between a first electrode and a second electrode; and a buffer layer disposed between the memory layer and the first electrode. The memory layer includes a first material layer and a second material layer. The first material layer and the second material layer are configured to exchange ionic species to change a resistance state of the memory layer.

Abstract: According to an example embodiment, a method of operating a semiconductor device includes applying a first voltage to the variable resistance device so as to change a resistance value of the variable resistance device from a first resistance value to a second resistance value that is different from the first resistance value, sensing first current flowing through the variable resistance device to which the first voltage is applied, determining a second voltage used to change the resistance value of the variable resistance device from the second resistance value to the first resistance value based on a distribution of the sensed first current, and applying the determined second voltage to the variable resistance device.

Abstract: Provided are a non-volatile memory device and a cross-point memory array including the same which have a diode characteristic enabling the non-volatile memory device and the cross-point memory array including the same to operate in a simple structure, without requiring a switching device separately formed so as to embody a high density non-volatile memory device. The non-volatile memory device includes a first electrode; a diode-storage node formed on the first electrode; and a second electrode formed on the diode-storage node.

Abstract: Methods of operating semiconductor devices that include variable resistance devices, the methods including writing first data to a semiconductor device by applying a reset pulse voltage to the variable resistance device so that the variable resistance device is switched from a first resistance state to a second resistance state, and writing second data to the semiconductor device by applying a set pulse voltage to the variable resistance device so that the variable resistance device is switched from the second resistance state to the first resistance state to the second resistance state. The reset pulse voltage is higher than the set pulse voltage, and a resistance in the second resistance state is greater than in the first resistance state.