Abstract: Provided is a bonding wire for a semiconductor package and a semiconductor package including the same. The bonding wire for the semiconductor package may include a core portion including silver (Ag), and a shell layer surrounding the core portion, having a thickness of 2 nm to 23 nm, and including gold (Au). The semiconductor package may include a package body having a first electrode structure and a second electrode structure, a semiconductor light emitting device comprising a first electrode portion and a second electrode portion electrically connected to the first electrode structure and the second electrode structure, and a bonding wire connecting at least one of the first electrode structure and the second electrode structure to the semiconductor light emitting device.

Abstract: Provided is a bonding wire for a semiconductor package and a semiconductor package including the same. The bonding wire for the semiconductor package may include a core portion including silver (Ag), and a shell layer surrounding the core portion, having a thickness of 2 nm to 23 nm, and including gold (Au). The semiconductor package may include a package body having a first electrode structure and a second electrode structure, a semiconductor light emitting device comprising a first electrode portion and a second electrode portion electrically connected to the first electrode structure and the second electrode structure, and a bonding wire connecting at least one of the first electrode structure and the second electrode structure to the semiconductor light emitting device.

Abstract: A semiconductor light emitting device package includes: a light emitting device; a wavelength conversion unit formed in a path of light emitted from the light emitting device and including a mixture of a wavelength conversion material and a glass material; and a reflective film disposed on an upper surface of the wavelength conversion unit and reflecting a partial amount of light emitted from the light emitting device and allowing a partial amount of light emitted from the light emitting device to be transmitted therethrough.

Abstract: A wavelength conversion structure comprises a sintered body comprising a mixture of a wavelength conversion material and a glass composition, wherein the wavelength conversion material comprises a phosphor and the glass composition comprises ZnO—BaO—SiO2—B2O3.

Abstract: A light emitting diode (LED) package includes: a package substrate having a first electrode structure and a second electrode structure; an LED chip disposed above a first surface of the package substrate and having a first electrode attached to the first electrode structure and a second electrode attached to the second electrode structure; a reflective layer disposed above the first surface of the package substrate to be separated from the LED chip, having a thickness less than a thickness of the LED chip, and configured to reflect light emitted from the LED chip to a given direction, wherein the wavelength converter has an upper surface substantially parallel to the first surface of the package substrate and a side surface inclined towards the upper surface of the wavelength converter.

Abstract: According to one embodiment of the present invention, a method for producing a sialon phosphor comprises: mixing a silicon precursor and an aluminum precursor and sintering the mixture to form a first sintered body; and mixing the first sintered body and a precursor for an active material and heat-treating the mixture to form a second sintered body. That is, the method for producing a sialon phosphor according to one embodiment of the present invention involves firstly forming the first sintered body serving as a host material to stably ensure a crystal structure, and then mixing the active material and the first sintered body so as to preserve the role of the active material without sacrificing the crystal structure of the first sintered body. Eventually, the active material in the crystal structure of the first sintered body is located in an interstitial site not located in the Si or Al position, thereby preventing the degradation of the crystallinity of the first sintered body.

Abstract: A wavelength conversion structure comprises a sintered body comprising a mixture of a wavelength conversion material and a glass composition, wherein the wavelength conversion material comprises a phosphor and the glass composition comprises ZnO-BaO-SiO2B2O3.

Abstract: A wavelength conversion structure comprises a sintered body comprising a mixture of a wavelength conversion material and a glass composition, wherein the wavelength conversion material comprises a phosphor and the glass composition comprises ZnO—BaO—SiO2—B2O3.

Abstract: A light emitting device package may include: a package board; a semiconductor light emitting device disposed on the package board; and a color characteristics converting unit having a resin including a wavelength conversion material converting light emitted from the semiconductor light emitting device into light of a different wavelength and glass powder having a glass composition with a rare earth element added thereto and filtering light within a particular wavelength band, and disposed on a path on which light emitted from the semiconductor light emitting device travels.

Abstract: There is provided a phosphor having a ?-type Si3N4 crystal structure including oxynitride expressed by an empirical formula Si6-zAlzOz N8-z:Eua,Mb, M being at least one selected from among strontium (Sr) and barium (Ba), an amount (a) of europium (Eu) ranging from 0.1 to 5 mol %, an amount (b) of M ranging from 0.1 to 10 mol %, and a composition rate (z) of aluminum (Al) satisfying 0.1<z<1, and the phosphor emitting light having a peak wavelength ranging from 500 to 550 nm when excitation light is irradiated thereto.

Abstract: A method of manufacturing a white light emitting device includes dividing a phosphor sheet into phosphor film units to be applied to individual light emitting diode (LED) devices, measuring light conversion characteristics of the respective phosphor film units, classifying the phosphor film units of the phosphor sheet into a plurality of groups according to measurement results of the light conversion characteristics and combining the phosphor film units classified into the plurality of groups and an LED device having predetermined light characteristics so as to obtain target color characteristics.

Abstract: A wavelength conversion structure comprises a sintered body comprising a mixture of a wavelength conversion material and a glass composition, wherein the wavelength conversion material comprises a phosphor and the glass composition comprises ZnO—BaO—SiO2—B2O3.

Abstract: A semiconductor light emitting device package includes: a light emitting device; a wavelength conversion unit formed in a path of light emitted from the light emitting device and including a mixture of a wavelength conversion material and a glass material; and a reflective film disposed on an upper surface of the wavelength conversion unit and reflecting a partial amount of light emitted from the light emitting device and allowing a partial amount of light emitted from the light emitting device to be transmitted therethrough.

Abstract: A method of manufacturing a white light emitting device includes dividing a phosphor sheet into phosphor film units to be applied to individual light emitting diode (LED) devices, measuring light conversion characteristics of the respective phosphor film units, classifying the phosphor film units of the phosphor sheet into a plurality of groups according to measurement results of the light conversion characteristics and combining the phosphor film units classified into the plurality of groups and an LED device having predetermined light characteristics so as to obtain target color characteristics.

Abstract: A light emitting device may include: a light emitting unit; a wavelength conversion unit disposed in a path of light emitted from the light emitting unit and converting a wavelength of light emitted from the light emitting unit; and a light transmission unit formed on at least one side of the wavelength conversion unit. The wavelength conversion unit may include a first quantum dot converting a wavelength of light into red light and a second quantum dot converting a wavelength of light into green light, and the patterns of first quantum dot and second quantum dot are alternately disposed repeatedly at least one or more times.

Abstract: A method of manufacturing a white light emitting device includes dividing a phosphor sheet into phosphor film units to be applied to individual light emitting diode (LED) devices, measuring light conversion characteristics of the respective phosphor film units, classifying the phosphor film units of the phosphor sheet into a plurality of groups according to measurement results of the light conversion characteristics and combining the phosphor film units classified into the plurality of groups and an LED device having predetermined light characteristics so as to obtain target color characteristics.

Abstract: According to one embodiment of the present invention, a light-emitting-device package comprises a wavelength-converting layer which is formed on a light-emitting-device chip, comprises a fluorescent body and crystallized glass, and converts the wavelength of the light generated from the light-emitting-device chip. Consequently, by making the refractive indices of the phosphor and the crystallized glass comprised in the wavelength-converting layer coincide, it is possible to reduce the scattering losses which occur when the refractive indices differ. As a result, it is possible to improve the light-extraction efficiency of the light-emitting-device package. Also, because the to light-emitting-device package uses the wavelength-converting layer comprising the phosphor and the crystallized glass, the processability and reliability are outstanding and it is possible to reduce the processing time when the light-emitting-device package is produced.

Abstract: A method for producing a sialon phosphor is provided. The method includes mixing a silicon precursor and an aluminum precursor and sintering the mixture to form a first sintered body. The first sintered body and a precursor for an active material are mixed and the mixture is heat-treated to form a second sintered body. That is, the exemplary method for producing a sialon phosphor involves firstly forming the first sintered body serving as a host material to stably ensure a crystal structure, and then mixing the active material and the first sintered body so as to preserve the role of the active material without sacrificing the crystal structure of the first sintered body.

Abstract: There is provided a phosphor having a ?-type Si3N4 crystal structure including oxynitride expressed by an empirical formula Si6-zAlzOzN8-z:Eua,Mb, M being at least one selected from among strontium (Sr) and barium (Ba), an amount (a) of europium (Eu) ranging from 0.1 to 5 mol %, an amount (b) of M ranging from 0.1 to 10 mol %, and a composition rate (z) of aluminum (Al) satisfying 0.1<z<1, and the phosphor emitting light having a peak wavelength ranging from 500 to 550 nm when excitation light is irradiated thereto.