Abstract: A method of fabricating the semiconductor device for preventing polysilicon line from being damaged during removal of a photoresist layer. The method begins by forming polysilicon lines on a core device region and an electrostatic discharge protection device region of a substrate. A plurality of offset spacers is formed on sidewalls of the polysilicon lines. After the offset spacers are formed, a photoresist layer is formed over the substrate to cover the core device region, while exposing the electrostatic discharge protection device region. With the photoresist layer serving as a mask, a punch-through ion implantation is performed on the electrostatic discharge protection device region before the photoresist layer is removed. Next, a plurality of lightly doped source/drain regions is formed in the core device region. A spacer is further formed on the edge of the offset spacer, followed by forming source/drain regions in the core device region and the electrostatic discharge protection device.

Abstract: A method of fabricating the semiconductor device for preventing polysilicon line from being damaged during removal of a photoresist layer. The method begins by forming polysilicon lines on a core device region and an electrostatic discharge protection device region of a substrate. A plurality of offset spacers is formed on sidewalls of the polysilicon lines. After the offset spacers are formed, a photoresist layer is formed over the substrate to cover the core device region, while exposing the electrostatic discharge protection device region. With the photoresist layer serving as a mask, a punch-through ion implantation is performed on the electrostatic discharge protection device region before the photoresist layer is removed. Next, a plurality of lightly doped source/drain regions is formed in the core device region. A spacer is further formed on the edge of the offset spacer, followed by forming source/drain regions in the core device region and the electrostatic discharge protection device.

Abstract: A method of fabricating a gate oxide layer. A mask layer isformed on a substrate. The mask layer and the substrate are patterned to form a trench in the substrate. A portion of the mask layer is removed to expose the substrate at a top edge corner portion of the trench. An insulation layer is formed to fill the trench and covering the exposed substrate and the remaining mask layer. The insulation layer over the remaining mask layer is removed to expose the mask layer. The remaining mask layer is removed to expose the substrate. The exposed substrate is implanted with ions to reduce the oxidation rate. As a result, the substrate at the top edge corner portion of the trench covered with the insulation layer has an oxidation rate higher than the exposed substrate. The insulation layer over the surface level of the substrate is then removed to expose the substrate at the top edge corner portion of the trench.

Abstract: A detachable sponge device for a spin coating machine used to coat a liquid material over a semiconductor wafer is provided. The detachable sponge device is used to prevent the solvent that is jetted on the edge of the wafer from being oversprayed elsewhere on the wafer. The detachable sponge device is composed of a curved mounting piece and a corrugated piece of sponge attached on the curved inner side of the mounting piece. The mounting piece can be detachably mounted on the spin coating machine. The corrugated piece of sponge can absorb splattered particles of solvent from the wafer which can thus be prevented from bouncing back onto the wafer. The planarization of the coating of SOG on the wafer thus will not be affected by splattering particles of the solvent. Excellent results of planarization of SOG or photoresist layers can thus be achieved.