Abstract: A first driver circuit is configured to cooperate with a second driver circuit to control a display panel, wherein the first driver circuit is configured to output display data to a first area of the display panel and the second driver circuit is configured to output display data to a second area of the display panel. A method used for the first driver circuit includes outputting at least one emission control signal to control the second area of the display panel when the second driver circuit is disabled.

Abstract: A manufacturing method of housing structure of electronic device is provided. The manufacturing method includes stacking a first structural layer, a painting layer, and a second structural layer, wherein the painting layer is located between the first and the second structural layers. The layer stacked after the painting layer washes and squeezes at least a portion of the flowing painting layer to form a random texture pattern.

Abstract: The present application discloses a method for fabricating a semiconductor device The method includes providing a substrate; forming a channel region in the substrate; forming a gate dielectric layer on the channel region; forming a gate bottom conductive layer on the gate dielectric layer; forming first impurity regions on two ends of the channel region; forming first contacts on the first impurity regions; forming programmable insulating layers on the first contacts; forming a gate via on the gate bottom conductive layer; and forming a top conductive layer on the gate via and the programmable insulating layers.

Abstract: The present application discloses a semiconductor device and a method for fabricating the semiconductor device. The semiconductor device includes a substrate; a plurality of nanowires positioned above and parallel to a top surface of the substrate, wherein the plurality of nanowires comprises channel regions and source/drain regions positioned on each of both sides of the channel regions; a gate stack positioned surrounding the channel regions; and a magnetic storage structure positioned above a drain region of the plurality of nanowires and positioned adjacent to the gate stack. The magnetic storage structure comprises a bottom ferromagnetic layer positioned above the drain region and having a variable magnetic polarity, a tunnel barrier layer positioned on the bottom ferromagnetic layer, and a top ferromagnetic layer positioned on the tunnel barrier layer and having a fixed magnetic polarity.

Abstract: The present application discloses a semiconductor device and a method for fabricating the semiconductor device. The semiconductor device includes a substrate, a channel region positioned in the substrate, first impurity regions positioned in the substrate and respectively positioned on two ends of the channel region, a gate dielectric layer positioned on the channel region, a gate bottom conductive layer positioned on the gate dielectric layer, first contacts respectively positioned on the first impurity regions, programmable insulating layers respectively positioned on the first contacts, a top conductive layer positioned on the programmable insulating layers and electrically coupled to the gate bottom conductive layer.

Abstract: The present application discloses a method for fabricating a semiconductor device The method includes providing a substrate; forming a channel region in the substrate; forming a gate dielectric layer on the channel region; forming a gate bottom conductive layer on the gate dielectric layer; forming first impurity regions on two ends of the channel region; forming first contacts on the first impurity regions; forming programmable insulating layers on the first contacts; forming a gate via on the gate bottom conductive layer; and forming a top conductive layer on the gate via and the programmable insulating layers.

Abstract: The present application discloses a semiconductor device and a method for fabricating the semiconductor device. The semiconductor device includes a substrate; a plurality of nanowires positioned above and parallel to a top surface of the substrate, wherein the plurality of nanowires comprises channel regions and source/drain regions positioned on each of both sides of the channel regions; a gate stack positioned surrounding the channel regions; and a magnetic storage structure positioned above a drain region of the plurality of nanowires and positioned adjacent to the gate stack. The magnetic storage structure comprises a bottom ferromagnetic layer positioned above the drain region and having a variable magnetic polarity, a tunnel barrier layer positioned on the bottom ferromagnetic layer, and a top ferromagnetic layer positioned on the tunnel barrier layer and having a fixed magnetic polarity.

Abstract: The present application discloses a semiconductor device and a method for fabricating the semiconductor device. The semiconductor device includes a substrate, a channel region positioned in the substrate, first impurity regions positioned in the substrate and respectively positioned on two ends of the channel region, a gate dielectric layer positioned on the channel region, a gate bottom conductive layer positioned on the gate dielectric layer, first contacts respectively positioned on the first impurity regions, programmable insulating layers respectively positioned on the first contacts, a top conductive layer positioned on the programmable insulating layers and electrically coupled to the gate bottom conductive layer.

Abstract: The present application discloses a semiconductor device and a method for fabricating the semiconductor device. The semiconductor device includes a substrate, a fin positioned on the substrate, a gate structure positioned on the fin, a pair of source/drain regions positioned on two sides of the fin, and a magnetic storage structure positioned above a drain region of the pair of source/drain regions and positioned adjacent to the gate structure. The magnetic storage structure comprises a bottom ferromagnetic layer positioned above the drain region and having a variable magnetic polarity, a tunnel barrier layer positioned on the bottom ferromagnetic layer, and a top ferromagnetic layer positioned on the tunnel barrier layer and having a fixed magnetic polarity.

Abstract: The present disclosure provides a semiconductor structure and a method for preparing the semiconductor structure. The semiconductor structure includes a substrate having a pattern-dense region and a pattern-loose region; a first drain stressor disposed in the pattern-dense region; a first source stressor disposed in the pattern-dense region; a buried gate structure disposed in the pattern-dense region, between the first drain stressor and the first source stressor; a second drain stressor disposed in the pattern-loose region; a second source stressor disposed in the pattern-loose region; and a planar gate structure disposed in the pattern-loose region, between the second drain stressor and the second source stressor.