Patents by Inventor Chang-Chin Yu
Chang-Chin Yu has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20230018253Abstract: A LED device includes multiple LED chips each including opposite first and second surfaces, a side surface, and an electrode assembly disposed on the second surface and including first and second electrodes. The first surface of each of the LED chips is a light exit surface. The LED device further includes an electric circuit layer assembly disposed on the second surfaces of the LED chips and having opposite first and second surfaces and a side surface. The first surface is electrically connected to the first and second electrodes. The LED device further includes an encapsulating layer enclosing the LED chips and the electric circuit layer assembly to expose the second surface of the electric circuit layer assembly.Type: ApplicationFiled: September 16, 2022Publication date: January 19, 2023Inventors: Junpeng SHI, Chen-Ke HSU, Chang-Chin YU, Yanqiu LIAO, Zhenduan LIN, Zhaowu HUANG, Senpeng HUANG
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Publication number: 20220376154Abstract: A semiconductor light-emitting device includes a lead frame, a light-emitting element, and a reflection layer. The lead frame includes a main body and a side body extending upwardly from the main body. The main body and the side body cooperatively define a receiving space. The side body has an inner surface facing the receiving space, and a first height measured from a surface of the main body. The light-emitting element is disposed on the surface of the main body and in the receiving space. The reflection layer covers at least a part of the inner surface, and has a second height measured from the surface of the main body. The second height is not smaller than 90% of the first height.Type: ApplicationFiled: May 13, 2022Publication date: November 24, 2022Inventors: Zhaowu HUANG, Chang-Chin YU, Li YANG, Chenxi YAN, Xinglong LI, Yang LI
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Patent number: 11450651Abstract: A LED device includes multiple LED chips each including opposite first and second surfaces, a side surface, and an electrode assembly disposed on the second surface and including first and second electrodes. The first surface of each of the LED chips is a light exit surface. The LED device further includes an electric circuit layer assembly disposed on the second surfaces of the LED chips and having opposite first and second surfaces and a side surface. The first surface is electrically connected to the first and second electrodes. The LED device further includes an encapsulating layer enclosing the LED chips and the electric circuit layer assembly to expose the second surface of the electric circuit layer assembly.Type: GrantFiled: January 14, 2020Date of Patent: September 20, 2022Assignee: QUANZHOU SAN'AN SEMICONDUCTOR TECHNOLOGY CO., LTD.Inventors: Junpeng Shi, Chen-Ke Hsu, Chang-Chin Yu, Yanqiu Liao, Zhenduan Lin, Zhaowu Huang, Senpeng Huang
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Publication number: 20200227395Abstract: A LED device includes multiple LED chips each including opposite first and second surfaces, a side surface, and an electrode assembly disposed on the second surface and including first and second electrodes. The first surface of each of the LED chips is a light exit surface. The LED device further includes an electric circuit layer assembly disposed on the second surfaces of the LED chips and having opposite first and second surfaces and a side surface. The first surface is electrically connected to the first and second electrodes. The LED device further includes an encapsulating layer enclosing the LED chips and the electric circuit layer assembly to expose the second surface of the electric circuit layer assembly.Type: ApplicationFiled: January 14, 2020Publication date: July 16, 2020Inventors: Junpeng SHI, Chen-Ke HSU, Chang-Chin YU, Yanqiu LIAO, Zhenduan LIN, Zhaowu HUANG, Senpeng HUANG
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Patent number: 9324909Abstract: Disclosed herein is a light emitting diode, the structure of the light emitting diode comprises a substrate, a first-type semiconductor layer, a structural layer, a light emitting layer, a second-type semiconductor layer, a transparent conductive layer, a first contact pad and a second contact pad in regular turn. The structural layer comprises a stacked structure having a trapezoid sidewall and nano columns extending from the trapezoid sidewall in regular arrangement. Also, a method for fabricating the light emitting diode is disclosed.Type: GrantFiled: June 15, 2015Date of Patent: April 26, 2016Assignee: LEXTAR ELECTRONICS CORPORATIONInventors: Chang-Chin Yu, Hsiu-Mu Tang, Mong-Ea Lin
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Publication number: 20150280064Abstract: Disclosed herein is a light emitting diode, the structure of the light emitting diode comprises a substrate, a first-type semiconductor layer, a structural layer, a light emitting layer, a second-type semiconductor layer, a transparent conductive layer, a first contact pad and a second contact pad in regular turn. The structural layer comprises a stacked structure having a trapezoid sidewall and nano columns extending from the trapezoid sidewall in regular arrangement. Also, a method for fabricating the light emitting diode is disclosed.Type: ApplicationFiled: June 15, 2015Publication date: October 1, 2015Inventors: Chang-Chin YU, Hsiu-Mu TANG, Mong-Ea LIN
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Patent number: 9087960Abstract: Disclosed herein is a light emitting diode, the structure of the light emitting diode comprises a substrate, a first-type semiconductor layer, a structural layer, a light emitting layer, a second-type semiconductor layer, a transparent conductive layer, a first contact pad and a second contact pad in regular turn. The structural layer comprises a stacked structure having a trapezoid sidewall and nano columns extending from the trapezoid sidewall in regular arrangement. Also, a method for fabricating the light emitting diode is disclosed.Type: GrantFiled: June 6, 2013Date of Patent: July 21, 2015Assignee: LEXTAR ELECTRONICS CORPORATIONInventors: Chang-Chin Yu, Hsiu-Mu Tang, Mong-Ea Lin
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Patent number: 9064998Abstract: A light emitting diode includes a substrate, a first-type semiconductor layer, a nanorod layer and a transparent planar layer. The first-type semiconductor layer is disposed over the substrate. The nanorod layer is formed on the first-type semiconductor layer. The nanorod layer includes a plurality of nanorods and each of the nanorods has a quantum well structure and a second-type semiconductor layer. The quantum well structure is in contact with the first-type semiconductor layer, and the second-type semiconductor layer is formed on the quantum well structure. The transparent planar layer is filled between the nanorods. A surface of the second-type semiconductor layer is exposed out of the transparent planar layer.Type: GrantFiled: November 26, 2014Date of Patent: June 23, 2015Assignee: LEXTAR ELECTRONICS CORPORATIONInventors: Chang-Chin Yu, Hsiu-Mu Tang, Mong-Ea Lin
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Publication number: 20150079716Abstract: A light emitting diode includes a substrate, a first-type semiconductor layer, a nanorod layer and a transparent planar layer. The first-type semiconductor layer is disposed over the substrate. The nanorod layer is formed on the first-type semiconductor layer. The nanorod layer includes a plurality of nanorods and each of the nanorods has a quantum well structure and a second-type semiconductor layer. The quantum well structure is in contact with the first-type semiconductor layer, and the second-type semiconductor layer is formed on the quantum well structure. The transparent planar layer is filled between the nanorods. A surface of the second-type semiconductor layer is exposed out of the transparent planar layer.Type: ApplicationFiled: November 26, 2014Publication date: March 19, 2015Inventors: Chang-Chin YU, Hsiu-Mu TANG, Mong-Ea LIN
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Patent number: 8946675Abstract: A light emitting diode includes a substrate, a first-type semiconductor layer, a nanorod layer and a transparent planar layer. The first-type semiconductor layer is disposed over the substrate. The nanorod layer is formed on the first-type semiconductor layer. The nanorod layer includes a plurality of nanorods and each of the nanorods has a quantum well structure and a second-type semiconductor layer. The quantum well structure is in contact with the first-type semiconductor layer, and the second-type semiconductor layer is formed on the quantum well structure. The transparent planar layer is filled between the nanorods. A surface of the second-type semiconductor layer is exposed out of the transparent planar layer.Type: GrantFiled: March 12, 2013Date of Patent: February 3, 2015Assignee: Lextar Electronics CorporationInventors: Chang-Chin Yu, Hsiu-Mu Tang, Mong-Ea Lin
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Publication number: 20140070241Abstract: A solid state light source array including a transparent substrate and N rows of solid state light emitting element series is provided. Each row of the solid state light emitting element series includes M solid state light emitting elements connected in series, wherein N, M are integers and N?1, M?2. Each of the solid state emitting elements includes a first type electrode pad and a second type electrode pad. The first and the Mth solid state emitting elements of each row of the solid state light emitting element series are electrically connected to a first conductive line and a second conductive line located on the edges of the first surface via the first type electrode pad and the second type electrode pad, respectively. The first conductive line and the second conductive line are physically disconnected.Type: ApplicationFiled: November 13, 2013Publication date: March 13, 2014Applicant: Lextar Electronics CorporationInventors: Chang-Chin Yu, Mong-Ea Lin
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Patent number: 8648352Abstract: A semiconductor light emitting structure including a substrate, a patterned structure, a first semiconductor layer, an active layer and a second semiconductor layer is provided. The patterned structure is protruded from or indented into a surface of the substrate, so that the surface of the substrate becomes a roughed surface. The patterned structure has an asymmetrical geometric shape. The first semiconductor layer is disposed on the roughed surface. The active layer is disposed on the first semiconductor layer. The second semiconductor is disposed on the active layer.Type: GrantFiled: December 8, 2011Date of Patent: February 11, 2014Assignee: Lextar Electronics CorporationInventors: Chang-Chin Yu, Mong-Ea Lin
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Publication number: 20140027802Abstract: An LED with undercut includes a first semiconductor layer, an illumination layer, a second semiconductor layer, a first electrode and a second electrode. The first semiconductor layer includes a first area and a second area. A first acute angle is included between a first slanted wall and a first top surface of the first area. The illuminating layer is formed on the second area. The second semiconductor is formed on the illuminating layer. The first and second electrodes are respectively formed on the first top surface and the second semiconductor layer. The first semiconductor layer on the second area, the illuminating layer and the second semiconductor layer on the first semiconductor layer form a MESA structure. The MESA structure includes a second slanted wall adjacent to the first area. A second acute angle is included between the second slanted wall and the first top surface.Type: ApplicationFiled: May 29, 2013Publication date: January 30, 2014Applicant: LEXTRA ELECTRONICS CORPORATIONInventors: Chang-Chin Yu, Hsiu-Mu Tang, Mong-Ea Lin
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Publication number: 20130341589Abstract: A light emitting diode includes a substrate, a first-type semiconductor layer, a nanorod layer and a transparent planar layer. The first-type semiconductor layer is disposed over the substrate. The nanorod layer is formed on the first-type semiconductor layer. The nanorod layer includes a plurality of nanorods and each of the nanorods has a quantum well structure and a second-type semiconductor layer. The quantum well structure is in contact with the first-type semiconductor layer, and the second-type semiconductor layer is formed on the quantum well structure. The transparent planar layer is filled between the nanorods. A surface of the second-type semiconductor layer is exposed out of the transparent planar layer.Type: ApplicationFiled: March 12, 2013Publication date: December 26, 2013Applicant: LEXTAR ELECTRONICS CORPORATIONInventors: Chang-Chin Yu, Hsiu-Mu Tang, Mong-Ea Lin
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Patent number: 8610139Abstract: A solid state light source array including a transparent substrate and N rows of solid state light emitting element series is provided. Each row of the solid state light emitting element series includes M solid state light emitting elements connected in series, wherein N, M are integers and N?1, M?2. Each of the solid state emitting elements includes a first type electrode pad and a second type electrode pad. The first and the Mth solid state emitting elements of each row of the solid state light emitting element series are electrically connected to a first conductive line and a second conductive line located on the edges of the first surface via the first type electrode pad and the second type electrode pad, respectively. The first conductive line and the second conductive line are physically disconnected.Type: GrantFiled: April 17, 2012Date of Patent: December 17, 2013Assignee: Lextar Electronics CorporationInventors: Chang-Chin Yu, Mong-Ea Lin
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Publication number: 20130328057Abstract: Disclosed herein is a light emitting diode, the structure of the light emitting diode comprises a substrate, a first-type semiconductor layer, a structural layer, a light emitting layer, a second-type semiconductor layer, a transparent conductive layer, a first contact pad and a second contact pad in regular turn. The structural layer comprises a stacked structure having a trapezoid sidewall and nano columns extending from the trapezoid sidewall in regular arrangement. Also, a method for fabricating the light emitting diode is disclosed.Type: ApplicationFiled: June 6, 2013Publication date: December 12, 2013Inventors: Chang-Chin Yu, Hsiu-Mu Tang, Mong-Ea Lin
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Publication number: 20130328010Abstract: A high brightness light-emitting diode free of p-type gallium nitride (GaN) layer is provided, which includes an n-type semiconductor layer, a multi-quantum well (MQW) layer, a p-type indium gallium nitride (InGaN) layer and an indium tin oxide (ITO) layer. The grain size of the ITO layer is ranging from 5 to 1000 angstroms. A method for manufacturing the high brightness light-emitting diode is also provided.Type: ApplicationFiled: March 11, 2013Publication date: December 12, 2013Applicant: LEXTAR ELECTRONICS CORPORATIONInventors: Chang-Chin Yu, Hsiu-Mu Tang, Mong-Ea Lin
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Patent number: 8574935Abstract: A manufacturing method of a solid state light emitting element is provided. A plurality of protrusion structures separated to each other are formed on a first substrate. A buffer layer is formed on the protrusion structures and fills the gaps between protrusion structures. An epitaxial growth layer is formed on the buffer layer to form a first semiconductor stacking structure. The first semiconductor stacking structure is inverted to a second substrate, so that the first semiconductor epitaxial layer and the second substrate are connected to form a second semiconductor stacking structure. The buffer layer is etched by a first etchant solution to form a third semiconductor stacking structure. A second etchant solution is used to permeate through the gaps between the protrusion structures, so that the protrusion structures are etched completely. The first substrate is removed from the third semiconductor stacking structure to form a fourth semiconductor stacking structure.Type: GrantFiled: April 10, 2012Date of Patent: November 5, 2013Assignee: Lextar Electronics CorporationInventors: Chang-Chin Yu, Mong-Ea Lin
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Publication number: 20130095591Abstract: A manufacturing method of a solid state light emitting element is provided. A plurality of protrusion structures separated to each other are formed on a first substrate. A buffer layer is formed on the protrusion structures and fills the gaps between protrusion structures. An epitaxial growth layer is formed on the buffer layer to form a first semiconductor stacking structure. The first semiconductor stacking structure is inverted to a second substrate, so that the first semiconductor epitaxial layer and the second substrate are connected to form a second semiconductor stacking structure. The buffer layer is etched by a first etchant solution to form a third semiconductor stacking structure. A second etchant solution is used to permeate through the gaps between the protrusion structures, so that the protrusion structures are etched completely. The first substrate is removed from the third semiconductor stacking structure to form a fourth semiconductor stacking structure.Type: ApplicationFiled: April 10, 2012Publication date: April 18, 2013Applicant: Lextar Electronics CorporationInventors: Chang-Chin Yu, Mong-Ea Lin
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Patent number: 8409894Abstract: A solid state light emitting semiconductor structure and an epitaxy growth method thereof are provided. The method includes the following steps: A substrate is provided. A plurality of protrusions separated from each other are formed on the substrate. A buffer layer is formed on the protrusions, and fills or partially fills the gaps between the protrusions. A semiconductor epitaxy stacking layer is formed on the buffer layer, wherein the semiconductor epitaxy stacking layer is constituted by a first type semiconductor layer, an active layer and a second type semiconductor layer in sequence.Type: GrantFiled: April 10, 2012Date of Patent: April 2, 2013Assignee: Lextar Electronics CorporationInventors: Chang-Chin Yu, Mong-Ea Lin