Abstract: A transistor structure includes a substrate, a source electrode, a drain electrode, a protective layer and a gate electrode. The source electrode and the drain electrode are provided on the substrate. The protective layer is provided on the substrate. The protective layer is provided between the source electrode and the drain electrode. The protective layer includes a SiNx layer and a SiOx layer. The SiOx layer is provided on the substrate, the SiNx layer is provided on the SiOx layer, and a through hole of the protective layer is formed to extend through the SiNx layer and the SiOx layer. The gate electrode is provided in the through hole, and the gate electrode is separated from at least part of the SiOx layer so as to form an air gap therebetween.

Abstract: The present disclosure relates to a semiconductor structure and a method of manufacturing the semiconductor structure. The semiconductor structure includes a substrate including a first surface and a conductive trace extending over the substrate; a die disposed over the first surface of the substrate; a molding disposed over the first surface of the substrate and covering the die; and a metallic layer surrounding the molding and the substrate, wherein the metallic layer is electrically connected to at least a portion of the conductive trace exposed through the substrate.

Abstract: A semiconductor package includes a substrate, a semiconductor die, a dummy die, a conductive layer, at least one first conductive wire, and at least one second conductive wire. The semiconductor die is disposed on the substrate. The dummy die is disposed on the semiconductor die. The conductive layer is disposed on the dummy die. The first conductive wire electrically connects the semiconductor die to a signal source. The second conductive wire electrically connects the conductive layer to a ground reference.

Abstract: The present disclosure relates to a semiconductor structure and a method of manufacturing the semiconductor structure. The semiconductor structure includes a substrate including a first surface and a conductive trace extending over the substrate; a die disposed over the first surface of the substrate; a molding disposed over the first surface of the substrate and covering the die; and a metallic layer surrounding the molding and the substrate, wherein the metallic layer is electrically connected to at least a portion of the conductive trace exposed through the substrate.