Abstract: A semiconductor structure includes an isolation feature formed in the semiconductor substrate and a first fin-type active region. The first fin-type active region extends in a first direction. A dummy gate stack is disposed on an end region of the first fin-type active region. The dummy, gate stack may overlie an isolation structure. In an embodiment, any recess such as formed for a source/drain region in the first fin-type active region will be displaced from the isolation region by the distance the dummy gate stack overlaps the first fin-type active region.

Abstract: An optical electrical module includes a first substrate, a second substrate, a bearing portion and at least one optical electrical element. The second substrate is combined with the first substrate and has a reflective surface facing to the first substrate. The bearing portion is disposed between the first substrate and the second substrate to limit at least one light guide element. The optical electrical element is disposed on a surface of the first substrate facing to the reflective surface and faces to the reflective surface. The optical electrical element is configured for providing or receiving light signals. The reflective surface and the light guide element are disposed on an optical path of the light signals.