Abstract: An apparatus and a method for semiconductor manufacturing processes are disclosed. The apparatus includes a wafer holder configured to hold a wafer, a nozzle disposed above the wafer and configured to provide a material to the wafer, and a nozzle control device configured to adjust a configuration of the nozzle to improve a uniformity of the material disposed onto the wafer. The method include loading the wafer into a chamber, feeding the material into the chamber through the nozzle, measuring a thickness profile of the material disposed onto the wafer, and adjusting a configuration of the nozzle based on the thickness profile.

Abstract: A manufacturing method of an electronic element module is provided. The method includes: disposing a plurality of first micro-light-emitting diodes on a first temporary substrate; and replacing at least one defective micro-light-emitting diode of the first micro-light-emitting diodes with at least one second micro-light-emitting diode. The first micro-light-emitting diodes and at least one second micro-light-emitting diode are distributed on the first temporary substrate. The first micro-light-emitting diodes and at least one second micro-light-emitting diode have same properties, and at least one of the appearance difference, the height difference and the orientation difference exists between the first micro-light-emitting diodes and at least one second micro-light-emitting diode. A semiconductor structure and a display panel are also provided.

Abstract: A micro light emitting diode display device includes a circuit substrate, a plurality of positioning protrusions disposed on the circuit substrate, and a plurality of micro light emitting diodes. Each positioning protrusion has a positioning side surface and a bottom surface. A first angle is included between each positioning side surface and the corresponding bottom surface. The positioning protrusions form positioning spaces on the circuit substrate. The micro light emitting diodes are disposed in the separated positioning spaces and are electrically connected to the circuit substrate. Each micro light emitting diode has a light emitting surface and a side surface. Each light emitting surface is located at a side of the corresponding micro light emitting diode away from the circuit substrate. A second angle is included between each side surface and the corresponding light emitting surface and is less than 90 degrees and greater than or equal to the first angle.

Abstract: A micro LED display device includes a display back plate having a first connecting electrode and a second connecting electrode, a micro LED structure disposed on the display back plate, and a first bonding structure and a second bonding structure disposed between the display back plate and the micro LED structure. The micro LED structure includes an epitaxial structure, and a first electrode and a second disposed on the side of the epitaxial structure closest to the display back plate. The orthogonal projections of the extension portions of the first electrode and the second electrode both exceed the orthogonal projection of the epitaxial structure on the display back plate. Neither the orthogonal projection of the first bonding structure nor the orthogonal projection of the second bonding structure overlaps the orthogonal projection of the bottom surface of the epitaxial structure on the display back plate.

Abstract: A micro light emitting diode display panel includes a backplane and a plurality of micro light emitting diode chips. The backplane includes a plurality first electrode lines and a plurality of second electrode lines. The first electrode lines and the second electrode lines define a plurality of sub-pixel regions arranged in an array form. The micro light emitting diode chips are disposed on the backplane and respectively located in the sub-pixel regions. Each of the micro light emitting diode chips has a first electrode, a plurality of second electrodes and a plurality of light-emitting regions. The first electrode is boned to one of the first electrode lines, and the second electrodes are boned to one of the second met lines. In a defect sub-pixel region, the electrical connection between one of the second electrodes and the corresponding one of the second electrode lines is cut to isolate.

Abstract: A light-emitting diode structure including a semiconductor stack layer is provided. The semiconductor stack layer includes a first type semiconductor layer, an active layer, and a second type semiconductor layer. The active layer is disposed on the first type semiconductor layer. The second type semiconductor layer is disposed on the active layer. A side wall at any side of the semiconductor stack layer includes a rough surface. A manufacturing method of a light-emitting diode structure is also provided.

Abstract: A manufacturing method of an electronic element module is provided. The method includes: disposing a plurality of first micro-light-emitting diodes on a first temporary substrate; and replacing at least one defective micro-light-emitting diode of the first micro-light-emitting diodes with at least one second micro-light-emitting diode. The first micro-light-emitting diodes and at least one second micro-light-emitting diode are distributed on the first temporary substrate. The first micro-light-emitting diodes and at least one second micro-light-emitting diode have same properties, and at least one of the appearance difference, the height difference and the orientation difference exists between the first micro-light-emitting diodes and at least one second micro-light-emitting diode. A semiconductor structure and a display panel are also provided.

Abstract: A manufacturing method of an electronic element module is provided. The method includes: disposing a plurality of first microelectronic elements on a first temporary substrate; and replacing at least one defective microelectronic element of the first microelectronic elements with at least one second microelectronic element. The first microelectronic elements and at least one second microelectronic element are distributed on the first temporary substrate. The first microelectronic elements and at least one second microelectronic element have same properties, and at least one of the appearance difference, the height difference and the orientation difference exists between the first microelectronic elements and at least one second microelectronic element. A semiconductor structure and a display panel are also provided.

Abstract: A micro light emitting diode display device includes a circuit substrate, a plurality of positioning protrusions disposed on the circuit substrate, and a plurality of micro light emitting diodes. Each positioning protrusion has a positioning side surface and a bottom surface. A first angle is included between each positioning side surface and the corresponding bottom surface. The positioning protrusions form positioning spaces on the circuit substrate. The micro light emitting diodes are disposed in the separated positioning spaces and are electrically connected to the circuit substrate. Each micro light emitting diode has a light emitting surface and a side surface. Each light emitting surface is located at a side of the corresponding micro light emitting diode away from the circuit substrate. A second angle is included between each side surface and the corresponding light emitting surface and is less than 90 degrees and greater than or equal to the first angle.

Abstract: A light-emitting diode structure including a semiconductor stack layer is provided. The semiconductor stack layer includes a first type semiconductor layer, an active layer, and a second type semiconductor layer. The active layer is disposed on the first type semiconductor layer. The second type semiconductor layer is disposed on the active layer. A side wall at any side of the semiconductor stack layer includes a rough surface. A manufacturing method of a light-emitting diode structure is also provided.

Abstract: A micro light-emitting display device having multiple display regions is provided. The micro light-emitting display device includes a substrate, multiple micro light-emitting elements, and multiple first light-emitting auxiliary structures. The micro light-emitting elements are disposed on the substrate, and positions of the micro light-emitting elements define ranges of the display regions. The micro light-emitting elements have a same first pitch between each other in any one of the display regions. The micro light-emitting elements have a second pitch between each other at a boundary across any two adjacent display regions. The first pitch is different from the second pitch. The light-emitting auxiliary structures are respectively disposed on the micro light-emitting elements. The light-emitting auxiliary structures have a same third pitch between each other.

Abstract: A micro LED display device includes a display back plate having a first connecting electrode and a second connecting electrode, a micro LED structure disposed on the display back plate, and a first bonding structure and a second bonding structure disposed between the display back plate and the micro LED structure. The micro LED structure includes an epitaxial structure, and a first electrode and a second disposed on the side of the epitaxial structure closest to the display back plate. The orthogonal projections of the extension portions of the first electrode and the second electrode both exceed the orthogonal projection of the epitaxial structure on the display back plate. Neither the orthogonal projection of the first bonding structure nor the orthogonal projection of the second bonding structure overlaps the orthogonal projection of the bottom surface of the epitaxial structure on the display back plate.

Abstract: A manufacturing method of an electronic element module is provided. The method includes: disposing a plurality of first microelectronic elements on a first temporary substrate; and replacing at least one defective microelectronic element of the first microelectronic elements with at least one second microelectronic element. The first microelectronic elements and at least one second microelectronic element are distributed on the first temporary substrate. The first microelectronic elements and at least one second microelectronic element have same properties, and at least one of the appearance difference, the height difference and the orientation difference exists between the first microelectronic elements and at least one second microelectronic element. A semiconductor structure and a display panel are also provided.

Abstract: A micro light-emitting diode disposed on and electrically connected to a circuit substrate includes: an epitaxial structure, at least one first electrode, a second electrode, and an insulating layer. The epitaxial structure includes a first semiconductor layer, a light emitting layer and a second semiconductor layer stacked sequentially. The first electrode is electrically connected to the first semiconductor layer and extends from a side of the first semiconductor layer along at least one side surface of the epitaxial structure to a position between the second semiconductor layer and the circuit substrate. The second electrode is located below the second semiconductor layer and is electrically connected to the second semiconductor layer. The insulating layer is disposed at least between the at least one first electrode and the light emitting layer of the epitaxial structure and between the at least one first electrode and the second semiconductor layer of the epitaxial layer.

Abstract: A micro light emitting diode display panel includes a backplane and a plurality of micro light emitting diode chips. The backplane includes a plurality first electrode lines and a plurality of second electrode lines. The first electrode lines and the second electrode lines define a plurality of sub-pixel regions arranged in an array form. The micro light emitting diode chips are disposed on the backplane and respectively located in the sub-pixel regions. Each of the micro light emitting diode chips has a first electrode, a plurality of second electrodes and a plurality of light-emitting regions. The first electrode is boned to one of the first electrode lines, and the second electrodes are boned to one of the second met lines. In a defect sub-pixel region, the electrical connection between one of the second electrodes and the corresponding one of the second electrode lines is cut to isolate.

Abstract: A screen protection device includes: a tempered glass sheet comprising a first surface and a second surface; a non-transparent layer positioned on the first surface and defining a transparent area for the screen protection device; and a sticking layer positioned on at least a portion of the non-transparent layer and surrounding the transparent area. An air layer is formed between a display screen of a hand-held electronic device and the transparent area, and one or more bidirectional air tunnels are formed between the sticking layer and the upper surface. When the transparent area is pressed to approach to or to contact with the display screen, air flows from the air layer to an outside space via the one or more air tunnels. Afterward, air flows from the outside space to the air layer via the one or more air tunnels when the transparent area is not pressed.