Patents by Inventor Chang Geun Anh

Chang Geun Anh has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20240192187
    Abstract: Disclosed is an artificial intelligence apparatus for detecting a target gas, which includes a mixed gas measurement unit that measures a mixed gas collected in a plurality of domains through a sensor array to generate sensing data including heterogeneous domain measurement data measured from the mixed gas collected in a domain different from the target gas and target domain measurement data measured from the mixed gas collected from the same domain as the target gas, a heterogeneous intelligence model deep learning unit that receives the heterogeneous domain measurement data to train a heterogeneous intelligence model, a target intelligence model deep learning unit that receives the heterogeneous intelligence model and the target domain measurement data to train a target intelligence model, and a target gas detection unit that determines whether an environmental gas includes the target gas using the target intelligence model.
    Type: Application
    Filed: November 15, 2023
    Publication date: June 13, 2024
    Applicant: ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE
    Inventors: Jae Hun CHOI, Do Hyeun KIM, Hwin Dol PARK, Seunghwan KIM, Hyung Wook NOH, Chang-Geun ANH, YongWon JANG, Kwang Hyo CHUNG
  • Patent number: 7195962
    Abstract: Provided is a MOSFET with an ultra short channel length and a method of fabricating the same. The ultra short channel MOSFET has a silicon wire channel region with a three-dimensional structure, and a source/drain junction formed in a silicon conductive layer formed of both sides of the silicon wire channel region. Also, a gate electrode formed on the upper surface of the silicon wire channel region by interposing a gate insulating layer having a high dielectric constant therebetween, and source and drain electrodes connected to the source/drain junction are included. The silicon wire channel region is formed with a triangular or trapezoidal section by taking advantage of different etch rates that depend on the planar orientation of the silicon. The source/drain junction is formed by a solid-state diffusion method.
    Type: Grant
    Filed: April 27, 2004
    Date of Patent: March 27, 2007
    Assignee: Electronics and Telecommunications Research Institute
    Inventors: Wonju Cho, Seong Jae Lee, Jong Heon Yang, Jihun Oh, Kiju Im, Chang Geun Anh