Abstract: A novel metal precursor having improved thermal stability and volatility is provided. Also provided herein are: a method for readily manufacturing a good quality metal oxide thin film at an excellent growth rate at low temperature by using the metal precursor; and a thin film manufactured by using the same.

Abstract: The present invention relates to a novel metal precursor having improved thermal stability and volatility and can provide: a method for readily manufacturing a good quality metal oxide thin film at an excellent growth rate at low temperature by using the metal precursor; and a thin film manufactured by using the same.

Abstract: The present invention relates to a ruthenium precursor represented by Chemical Formula 1, and the ruthenium precursor has the advantages of having improved thermal stability and volatility and not having to use oxygen when depositing a thin film, and thus is capable of forming a high-quality ruthenium thin film.

Abstract: Disclosed herein is a novel strontium precursor containing a beta-diketonate compound. Being superior in thermal stability and volatility, the strontium precursor can form a quality strontium thin film.

Abstract: Disclosed herein is a novel strontium precursor containing a beta-diketonate compound. Being superior in thermal stability and volatility, the strontium precursor can form a quality strontium thin film.

Abstract: The present invention relates to a graphene pattern forming method using a delamination technique employing a polymer stamp. The technique is adequate for forming a graphene pattern having a an arbitrary target pattern. According to the present invention, a portion of a graphene layer formed on a substrate is physically and selectively delaminated using the polymer stamp to simply and easily form a desired graphene pattern having a uniform line width on the substrate. Also, a portion of the graphene layer formed on the substrate is physically and selectively delaminated in a roll-to-roll manner using a rotating body stamp or by using a stamp having a large area to simply and easily form a desired graphene pattern having a uniform line width on the a substrate having a large area.

Abstract: This invention relates to a method to induce growth of carbon nanotubes using a liquid phased-hydrocarbon based material under a critical range of equilibrating between liquid and gas phases, thereby easily manipulating a required carbon source. This invention also relates to a method to facilitate easy generation of a carbon backbone of the carbon nanotube because the reaction is performed in the presence of a metal nanoparticle or a metal compound capable of spontaneously generating a seed catalyst which stimulates the growth of carbon nanotubes as well as secures safety enough for the industrial application by using a mild reaction condition within the critical range. Accordingly, this invention can produce the carbon nanotube with high transition efficiency under a mild condition with a relatively lower temperature and pressure than those in conventional gas phased-methods without using a costly equipment, thereby cost-effectively producing the carbon nanotube in large quantities.

Abstract: The present invention relates to novel tin amino-alkoxide complexes and a method for preparing the same, precisely novel tin amino-alkoxide complexes represented by formula 1 and useful as a precursor for tin and tin oxide thin films and a precursor for the production of nano-sized tin and tin oxide particles and a method for preparing the same. In formula 1, A is linear or branched (C2-C10) alkylene substituted or not substituted with halogen; R1 and R2 are independently linear or branched (C1-C7) alkyl substituted or not substituted with halogen.

Abstract: Disclosed herein is a method of depositing a nanolaminate film for next-generation non-volatile floating gate memory devices by atomic layer deposition. The method includes the steps of: introducing a substrate into an atomic layer deposition reactor; forming on the substrate a first high-dielectric-constant layer by alternately supplying an oxygen source and a metal source selected from among an aluminum source, a zirconium source and a hafnium source; forming on the first high-dielectric-constant layer a nickel oxide layer by alternately supplying a nickel source and an oxygen source; and forming on the nickel oxide layer a second high-dielectric-constant layer by alternately supplying an oxygen source and a metal source selected from among an aluminum source, a zirconium source and a hafnium source.

Abstract: The present invention relates to novel tin amino-alkoxide complexes and a method for preparing the same, precisely novel tin amino-alkoxide complexes represented by formula 1 and useful as a precursor for tin and tin oxide thin films and a precursor for the production of nano-sized tin and tin oxide particles and a method for preparing the same. In formula 1, A is linear or branched (C2-C10) alkylene substituted or not substituted with halogen; R1 and R2 are independently linear or branched (C1-C7) alkyl substituted or not substituted with halogen.

Abstract: A volatile nickel aminoalkoxide complex of formula (I) can form a nickel thin film having an improved quality by metal organic chemical vapor deposition (MOCVD).

Abstract: A volatile nickel aminoalkoxide complex of formula (I) can form a nickel thin film having an improved quality by metal organic chemical vapor deposition (MOCVD).

Abstract: Disclosed herein is a method of depositing a nanolaminate film for next-generation non-volatile floating gate memory devices by atomic layer deposition. The method includes the steps of: introducing a substrate into an atomic layer deposition reactor; forming on the substrate a first high-dielectric-constant layer by alternately supplying an oxygen source and a metal source selected from among an aluminum source, a zirconium source and a hafnium source; forming on the first high-dielectric-constant layer a nickel oxide layer by alternately supplying a nickel source and an oxygen source; and forming on the nickel oxide layer a second high-dielectric-constant layer by alternately supplying an oxygen source and a metal source selected from among an aluminum source, a zirconium source and a hafnium source.

Abstract: This invention relates to a method to induce growth of carbon nanotubes using a liquid phased-hydrocarbon based material under a critical range of equilibrating between liquid and gas phases, thereby easily manipulating a required carbon source. This invention also relates to a method to facilitate easy generation of a carbon backbone of the carbon nanotube because the reaction is performed in the presence of a metal nanoparticle or a metal compound capable of spontaneously generating a seed catalyst which stimulates the growth of carbon nanotubes as well as secures safety enough for the industrial application by using a mild reaction condition within the critical range. Accordingly, this invention can produce the carbon nanotube with high transition efficiency under a mild condition with a relatively lower temperature and pressure than those in conventional gas phased-methods without using a costly equipment, thereby cost-effectively producing the carbon nanotube in large quantities.

Abstract: A volatile copper aminoalkoxide complex of formula (I) can form a copper thin film having an improved quality by metal organic chemical vapor deposition (MOCVD): wherein, R1, R2, R3 and R4 are each independently C1-4 alkyl optionally carrying one or more fluorine substituents; and m is an integer in the range of 1 to 3.

Abstract: A volatile organogallium compound of formula(I), an azidodialkylgallium complexed with a hydrazine derivative, can form a GaN film having no nitrogen defects by a metal organic chemical vapor deposition(MOCVD): R1R2(N3)Ga.(R3HNNR4H)  (I) wherein, R1 and R2 are each independently C1-5 alkyl; and R3 and R4 are each independently hydrogen or C1-5 alkyl.

Abstract: A novel organometallic compound of formula M[(.mu.-OR').sub.2 M'R.sub.2 ].sub.2 can be vaporized at a low temperature and advantageously employed in the CVD of a heterometallic oxide film of the MM'.sub.2 O.sub.4 type, wherein M is a divalent element such as Be, Mg, Zn or Cd; M' is a Group 13 element such as Al or Ga; and R and R' are each independently a C.sub.1-10 alkyl group, with the proviso that if M is Mg, M' is not Al.

Abstract: A novel organometallic compound of formula M[(.mu.-OR').sub.2 M'R.sub.2 ].sub.2 can be vaporized at a low temperature and advantageously employed in the CVD of a heterometallic oxide film of the MM'.sub.2 O.sub.4 type, wherein M is a divalent element such as Be, Mg, Zn or Cd; M' is a Group 13 element such as Al or Ga; and R and R' are each independently a C.sub.1-10, alkyl group, with the proviso that if M is Mg, M' is not Al.