Abstract: Provided are a gas injection device and substrate processing apparatus using the same. The gas injection device includes a plurality of gas injection units disposed above a substrate support part rotatably disposed within a chamber to support a plurality of substrates, the plurality of gas injection units being disposed along a circumference direction with respect to a center point of the substrate support part to inject a process gas onto the substrates. Each of the plurality of gas injection units includes a top plate in which an inlet configured to introduce the process gas is provided and an injection plate disposed under the top plate to define a gas diffusion space between the injection plate and the top plate along a radius direction of the substrate support part, the injection plate having a plurality of gas injection holes under the gas diffusion space to inject the process gas introduced through the inlet and diffused in the gas diffusion space onto the substrate.

Abstract: Disclosed herein is a high Cr Ferritic/Martensitic steel comprising 0.04 to 0.13% by weight of carbon, 0.03 to 0.07% by weight of silicon, 0.40 to 0.50% by weight of manganese, 0.40 to 0.50% by weight of nickel, 8.5 to 9.5% by weight of chromium, 0.45 to 0.55% by weight of molybdenum, 0.10 to 0.25% by weight of vanadium, 0.02 to 0.10% by weight of tantalum, 0.21 to 0.25% by weight of niobium, 1.5 to 3.0% by weight of tungsten, 0.015 to 0.025% by weight of nitrogen, 0.01 to 0.02% by weight of boron and iron balance. By regulating the contents of alloying elements such as nitrogen, born, the high Cr Ferritic/Martensitic steel with to superior tensile strength and creep resistance is provided, and can be effectively used as an in-core component material for sodium-cooled fast reactor (SFR).

Abstract: High-Cr ferritic/martensitic steels having an improved tensile strength and creep resistance are provided, which includes 0.04˜0.13 weight % of carbon, 0.03˜0.07 weight % of silicon, 0.40˜0.50 weight % of manganese, 0.40˜0.50 weight % of nickel, 8.5˜9.5 weight % of chromium, 0.45˜0.55 weight % of molybdenum, 0.10˜0.25 weight % of vanadium, 0.02˜0.10 weight % of tantalum, 0.15˜0.25 weight % of niobium, 1.5˜3.0 weight % of tungsten, 0.05˜0.12 weight % of nitrogen, 0.004˜0.008 weight % of boron, and optionally, 0.002˜0.010 weight % of phosphorus or 0.01˜0.08 weight % of zirconium, and iron balance. By regulating the contents of alloying elements such as niobium, tantalum, tungsten, nitrogen, boron, zirconium, carbon, the high-Cr ferritic/martensitic steels with superior tensile strength and creep resistance are provided, and can be effectively used as an in-core structural material for Generation IV sodium-cooled fast reactor (SFR) which is used under high temperature and high irradiation conditions.

Abstract: The present invention relates to a micro metal mold for manufacturing micro metal sheet products provided with a fine or micro opening(s) or an aperture(s) together with or independently of a groove(s) and/or a protrusion(s), a method for making the mold by the electroforming or electroplating method, a method for making the mold and micro metal sheet products manufactured by using the micro metal mold. According to the invention, it is possible to manufacture micro metal sheet products, provided with fine and precise dimensions of an opening(s) as well as a groove(s) and/or a protrusion(s), under a mass production.

Abstract: Provided are an apparatus and method for depositing a thin film, and a method for gap-filling a trench in a semiconductor device. The thin film depositing apparatus includes a plurality of substrates provided on the same space inside a reactor, wherein deposition of the thin film and partial etching of the deposited thin film are repeated to form the thin film on the plurality of substrates by exposing the substrates to two or more source gases and an etching gas supplied together at predetermined time intervals while rotating the substrates. According to exemplary embodiments, it is possible to concurrently or alternatively perform deposition and etching of a thin film, so that a thin film with good gap-fill capability can be deposited.

Abstract: Provided is a method of manufacturing a high strength ferritic/martensitic steel. The method includes melting a ferritic/martensitic steel, hot-working the melted ferritic/martensitic steel, normalizing the hot-worked ferritic/martensitic steel at a temperature of about 1050° C. to about 1200° C., tempering the ferritic/martensitic steel at a temperature of about 600° C. or less, and leaving MX precipitates while preventing a M23C6 precipitate from being precipitated, and cold-working and thermal-treating the ferritic/martensitic steel in a multistage fashion, and precipitating M23C6 precipitates. Through the above described configuration, the high strength ferritic/martensitic steel that prevents a ductility from being deteriorated even in a high-temperature environment may be manufactured.

Abstract: System and method provide an on-line high-performance diagnosis service for cardiovascular disorders. A client requests a high-performance diagnosis by transmitting real electrocardiographic treatment data and magnetocardiographic treatment data of a human body being a treatment object and virtual heart simulation parameters to a medical service server. The medical service server, in response to the diagnosis request, analyzes the real electrocardiographic treatment data to generate an electrocardiographic analysis result, and performs a virtual heart simulation using the simulation parameters to generate a pseudo electrocardiogram and magnetocardiogram.

Abstract: The object of this invention is to provide an air conditioner with a variable capacity compressor (2) parallely connected to a fixed capacity compressor (4), and a method of controlling the operation of such an air conditioner. When it is required to start the fixed capacity compressor (4) in addition to an operation of the variable capacity compressor (2) due to an increase in the sum of the required cooling capacities of indoor units (9), an outdoor control unit (13) starts the fixed capacity compressor (4) during an unloading mode operation of the variable capacity compressor (2) where the pressure difference between the outlet side and inlet side of the variable capacity compressor is minimized. The fixed capacity compressor (4) is thus smoothly started without causing an induction of excessive starting current, and improves the operational reliability of the air conditioner.

Abstract: The object of this invention is to provide an air conditioner with a variable capacity compressor (2) parallely connected to a fixed capacity compressor (4), and a method of controlling the operation of such an air conditioner. When it is required to start the fixed capacity compressor (4) in addition to an operation of the variable capacity compressor (2) due to an increase in the sum of the required cooling capacities of indoor units (9), an outdoor control unit (13) starts the fixed capacity compressor (4) during an unloading mode operation of the variable capacity compressor (2) where the pressure difference between the outlet side and inlet side of the variable capacity compressor is minimized. The fixed capacity compressor (4) is thus smoothly started without causing an induction of excessive starting current, and improves the operational reliability of the air conditioner.

Abstract: Method for forming a conductive line of a semiconductor device which has a high thermal stability and low electrical resistance includes the steps of forming an insulating layer on a semiconductor substrate, sequentially forming a semiconductor layer and a tungsten film on the insulating layer, nitrifying the tungsten film with heat treatment, and selectively etching the tungsten film and the semiconductor layer.