Abstract: An assembled grid tray is disclosed, comprising a frame for holding multiple substrate trays to form a larger tray for use in a semiconductor processing tool. The frame may be comprised of two outer frame members that hold one or more of the trays, each with a magnet rail use with a maglev system. The frame may be further comprised of an inner frame member positioned between the outer frame members, which may also include a magnet rail, with the frame members being held in position by one or more outer beam members. The frame members may be fabricated of a material having a similar thermal expansion to trays to be placed in the frame.

Abstract: An apparatus for plasma processing of substrates is disclosed. A plasma processing chamber is provided which includes a chamber body and a lid. The lid includes a faceplate coupled to a backing plate. The faceplate and the backing plate are disposed within a processing volume defined by the chamber body and the lid. One or more ferrite blocks are coupled to the backing plate to modulate an electromagnetic field created by an RF current from an RF generator. A gas feed assembly including a gas source, a remote plasma source, and a zero field feed through are coupled to, and in fluid communication with, the processing volume through the backing plate and faceplate.

Abstract: The present disclosure relates to a method for producing a negative electrode material for a secondary battery having excellent electrochemical performance by using a silicon oxide with a low oxygen content, and a negative electrode material for a secondary battery produced by the method, a secondary battery, wherein the method comprises a gel-forming step of introducing SiCl4 and then ethylene glycol into a reactor at a temperature of 0° C. to 25° C. under an inert atmosphere to form a gel; a preheating step of heating the gel to a temperature of 200° C. to 500° C.; and a heat treatment step of heating the gel subjected to the preheating step to a temperature of 500° C. to 1100° C. to form a silicon oxide.

Abstract: An integrated circuit includes a data processing circuit, an electrostatic discharge (ESD) protection circuit which is connected between a voltage rail and a ground rail and protects the data processing circuit from an ESD event on the voltage rail, and a switch circuit for controlling a connection between the voltage rail and the data processing circuit in response to a control signal.

Abstract: A source driver for a display device includes a gamma voltage generation circuit, first through (2m)-th data driving circuits, and a switch circuit. The gamma voltage generation circuit generates R, G and B gamma voltages. The (2k?1)-th data driving circuits consecutively receive red image data and blue image data, and consecutively generate a R driving voltage and a B driving voltage using the R gamma voltages and B gamma voltages, respectively, during one horizontal period. The (2k)-th data driving circuits consecutively receive first green image data and second green image data, and consecutively generate a G1 driving voltage and a G2 driving voltage, respectively, using the G gamma voltages during the one horizontal period. The switch circuit outputs the R, B, G1, and G2 driving voltages through different data lines from each other based on a first selection signal and a second selection signal.

Abstract: A display driving device includes a digital-to-analog converter generating analog image data, a plurality of pads connected to a plurality of data lines included in a display panel, a buffer circuit having a plurality of buffers receiving the analog image data to generate a data voltage, a first switch connected between an output terminal of the plurality of buffers and the plurality of pads, and a second switch connected between an input terminal of the plurality of buffers and the digital-to-analog converter, and a controller turning the first switch off and turning the second switch on to set at least a partial output of the plurality of buffers as new data voltages when the data voltage is output to the plurality of data lines through the plurality of pads.

Abstract: An apparatus for plasma processing of substrates is disclosed. A plasma processing chamber is provided which includes a chamber body and a lid. The lid includes a faceplate coupled to a backing plate. The faceplate and the backing plate are disposed within a processing volume defined by the chamber body and the lid. One or more ferrite blocks are coupled to the backing plate to modulate an electromagnetic field created by an RF current from an RF generator. A gas feed assembly including a gas source, a remote plasma source, and a zero field feed through are coupled to, and in fluid communication with, the processing volume through the backing plate and faceplate.

Abstract: Apparatus and methods are provided for reducing cross-contamination between deposition operations during the fabrication of heterojunction cells. An apparatus includes the substrate carrier including a plurality of pockets, and the carrier mask defining the openings that are sized and positioned in correspondence to the pockets of the substrate carrier. The substrate carrier carries a plurality of substrates into an i-layer deposition chamber and a p-layer deposition chamber. The substrate carrier is masked by the carrier mask during deposition of a p-layer. In-situ film mask layer can be used with or without the carrier mask. The in-situ film mask layer is formed of SiN or SiNO and can be deposited over the p-layer. The p-layer is a p-type nanocrystalline SiOx layer formed from a combination of SiH4, B2H6, H2 or CO2. A single substrate carrier can be repeatedly used for sequential deposition of an i-layer and a p-layer without cross contamination.

Abstract: Disclosed are a unit cell capable of improving a reliability by enhancing a data sensing margin in a read operation, and a nonvolatile memory device with the same. The unit cell of a nonvolatile memory device includes: an antifuse having a first terminal between an input terminal and an output terminal; and a first switching unit coupled between a second terminal of the antifuse and a ground voltage terminal.

Abstract: A source driver for a display device includes a gamma voltage generation circuit, first through (2m)-th data driving circuits, and a switch circuit. The gamma voltage generation circuit generates R, G and B gamma voltages. The (2k?1)-th data driving circuits consecutively receive red image data and blue image data, and consecutively generate a R driving voltage and a B driving voltage using the R gamma voltages and B gamma voltages, respectively, during one horizontal period. The (2k)-th data driving circuits consecutively receive first green image data and second green image data, and consecutively generate a G1 driving voltage and a G2 driving voltage, respectively, using the G gamma voltages during the one horizontal period. The switch circuit outputs the R, B, G1, and G2 driving voltages through different data lines from each other based on a first selection signal and a second selection signal.

Abstract: A display driving device includes a digital-to-analog converter generating analog image data, a plurality of pads connected to a plurality of data lines included in a display panel, a buffer circuit having a plurality of buffers receiving the analog image data to generate a data voltage, a first switch connected between an output terminal of the plurality of buffers and the plurality of pads, and a second switch connected between an input terminal of the plurality of buffers and the digital-to-analog converter, and a controller turning the first switch off and turning the second switch on to set at least a partial output of the plurality of buffers as new data voltages when the data voltage is output to the plurality of data lines through the plurality of pads.

Abstract: A source driver for a display device includes a gamma voltage generation circuit, first through (2m)-th data driving circuits, and a switch circuit. The gamma voltage generation circuit generates R, G and B gamma voltages. The (2k?1)-th data driving circuits consecutively receive red image data and blue image data, and consecutively generate a R driving voltage and a B driving voltage using the R gamma voltages and B gamma voltages, respectively, during one horizontal period. The (2k)-th data driving circuits consecutively receive first green image data and second green image data, and consecutively generate a G1 driving voltage and a G2 driving voltage, respectively, using the G gamma voltages during the one horizontal period. The switch circuit outputs the R, B, G1, and G2 driving voltages through different data lines from each other based on a first selection signal and a second selection signal.

Abstract: An integrated circuit includes a data processing circuit, an electrostatic discharge (ESD) protection circuit which is connected between a voltage rail and a ground rail and protects the data processing circuit from an ESD event on the voltage rail, and a switch circuit for controlling a connection between the voltage rail and the data processing circuit in response to a control signal.

Abstract: A source driver for a display device includes a gamma voltage generation circuit, first through (2m)-th data driving circuits, and a switch circuit. The gamma voltage generation circuit generates R, G and B gamma voltages. The (2k?1)-th data driving circuits consecutively receive red image data and blue image data, and consecutively generate a R driving voltage and a B driving voltage using the R gamma voltages and B gamma voltages, respectively, during one horizontal period. The (2k)-th data driving circuits consecutively receive first green image data and second green image data, and consecutively generate a G1 driving voltage and a G2 driving voltage, respectively, using the G gamma voltages during the one horizontal period. The switch circuit outputs the R, B, G1, and G2 driving voltages through different data lines from each other based on a first selection signal and a second selection signal.

Abstract: An oscillator includes a reference current generator to generate a reference current, a reference voltage generator to generate a reference voltage based on the reference current, a comparison voltage generator to generate a comparison voltage obtained by delaying and inverting a clock signal based on the reference current, and a clock signal generator to compare the comparison voltage with the reference voltage and generate the clock signal based on a result of the comparison.

Abstract: A display driver IC with a built-in memory device having a one-time programmable function is provided. The memory device includes: a cell array comprising a plurality of one-time programmable unit cells and configured to receive a writing voltage generated from an internal voltage generating unit to operate upon writing operation; a detecting unit configured to detect a change of the writing voltage; and a controlling unit configured to control the internal voltage generating unit and the unit cells according to an output signal of the detecting unit.

Abstract: A display driver IC with a built-in memory device having a one-time programmable function is provided. The memory device includes: a cell array comprising a plurality of one-time programmable unit cells and configured to receive a writing voltage generated from an internal voltage generating unit to operate upon writing operation; a detecting unit configured to detect a change of the writing voltage; and a controlling unit configured to control the internal voltage generating unit and the unit cells according to an output signal of the detecting unit.

Abstract: A display driver IC with a built-in memory device having a one-time programmable function is provided. The memory device includes: a cell array comprising a plurality of one-time programmable unit cells and configured to receive a writing voltage generated from an internal voltage generating unit to operate upon writing operation; a detecting unit configured to detect a change of the writing voltage; and a controlling unit configured to control the internal voltage generating unit and the unit cells according to an output signal of the detecting unit.

Abstract: Disclosed are a unit cell capable of improving a reliability by enhancing a data sensing margin in a read operation, and a nonvolatile memory device with the same. The unit cell of a nonvolatile memory device includes: an antifuse having a first terminal between an input terminal and an output terminal; and a first switching unit coupled between a second terminal of the antifuse and a ground voltage terminal.

Abstract: There is provided an anti-fuse, including a gate dielectric layer formed over a substrate, a gate electrode, including a body portion and one or more protruding portions extending from the body portion, the body portion and the one or more protruding portions being formed to contact on the gate dielectric layer, and a junction region formed in a portion of the substrate exposed by sidewalls of the one or more protruding portions.