Abstract: A display device including a substrate, a driving element, a reflective layer and a first auxiliary layer is provided. The substrate has a first area and a second area. The driving element is placed within the first area. The reflective layer is placed above the first area and at least a portion of the second area and coupled to the driving element. The first auxiliary layer is placed on the reflective layer above the first area. The first auxiliary layer improves the electrical characteristic of the reflective layer. A reflectance of the first auxiliary layer is not larger than a reflectance of the reflective layer.

Abstract: A method for fabricating organic electroluminescent devices is disclosed. The method comprises providing a substrate divided into first and second regions, forming an amorphous silicon layer on the substrate, forming a protection film on the amorphous silicon layer within the second region, performing an excimer laser annealing process on the amorphous silicon layer for converting it to a polysilicon layer, removing the protection film, patterning the polysilicon layer, thus a first patterned polysilicon layer in the first region and a second patterned polysilicon layer in the second region are formed. A resultant organic electroluminescent device is obtained. Specifically, the grain size of the first patterned polysilicon layer is large than that of the second patterned polysilicon layer.

Abstract: The method for fabricating a flat panel display includes performing a first crystallization process to re-crystallize an amorphous silicon layer on a glass substrate to make the amorphous silicon layer become a polysilicon layer, forming a patterned absorbing layer to cover an active area pattern of a driving TFT and to expose portions of the polysilicon layer, performing a second crystallization process to re-crystallization the exposed portions of the polysilicon layer so that the exposed portions of the polysilicon layer has a different grain structure from the grain structure of the driving TFT, removing the patterned absorbing layer, and removing portions of the polysilicon layer to form an active area of the driving TFT and an active area of a switching TFT area in the exposed portions of the polysilicon layer of each sub-pixel.

Abstract: Systems for displaying images and fabrication method thereof are provided. A representative system incorporates an electroluminescent device including light emitting units emitting lights with different luminescent intensities along light emitting paths thereof, formed overlying a substrate. And a compensation layer is disposed along the light emitting paths to adjust the different luminescent intensities for outputting substantially uniform light.

Abstract: A self-aligned LDD TFT and a fabrication method thereof. The method includes providing a semiconductor layer. A first masking layer is provided over a first region of the semiconductor layer, said first masking layer comprising a material that provide a permeable barrier to a dopant. The semiconductor layer is exposed, including the first region covered by the first masking layer, to the dopant, wherein the first region covered by the first masking layer is lightly doped with the dopant in comparison to a second region not covered by the first masking layer.

Abstract: Systems for displaying images and fabrication method thereof are provided. A representative system incorporates an electroluminescent device including light emitting units emitting lights with different luminescent intensities along light emitting paths thereof, formed overlying a substrate. And a compensation layer is disposed along the light emitting paths to adjust the different luminescent intensities for outputting substantially uniform light.

Abstract: A system for displaying images is provided. The system includes a self-emission type display device including a substrate, a first sub-pixel unit disposed on the substrate, and a second sub-pixel unit disposed on the substrate and adjacent to the first sub-pixel unit. Each of the first and second sub-pixel units comprises a light-emitting device, a power line electrically connected to the light-emitting device, and a storage capacitor having an electrode electrically connected to the power line. The electrodes of the storage capacitors of the first and second sub-pixel units are formed of a continuous conductive layer, such that the power lines of the first and second sub-pixel units are electrically connected to each other through the continuous conductive layer.

Abstract: An embodiment of the invention provides a display panel, which includes a substrate having a pixel region and a peripheral region, a control element overlying the pixel region of the substrate, a conducting layer overlying the substrate in the peripheral region, a first insulating layer overlying the conducting layer in the peripheral region, wherein a ratio between an area of the first insulating layer and an area of the conducting layer in the peripheral region is between about 0.27 and 0.99, a lower electrode layer overlying the first insulating layer, and a second insulating layer overlying the lower electrode layer.

Abstract: The invention provides a top emitting organic electroluminescent display comprising a substrate including a display area. A conductive layer is disposed on the substrate, electrically connecting the substrate. A reflective layer is disposed on the display region of the substrate. A dielectric layer is formed on the conductive layer, the reflective layer and the substrate, with a via exposing the conductive layer. A transparent electrode layer is disposed on the dielectric layer, electrically connecting the conductive layer through the via. An organic electroluminescent layer corresponding to the display region is disposed on the transparent electrode layer.

Abstract: An exemplary embodiment of a system comprises an active matrix organic electroluminescent device, having a substrate, and a plurality of scan lines and data lines disposed on the substrate, for defining a plurality of pixel regions. Each pixel structure comprises: a switching thin film transistor, a driving thin film transistor, and a storage capacitor. The switching TFT has a light-shielding layer adapted for preventing the sunlight from being incident into the switching TFT. The driving TFT is a bottom gate thin film transistor and have advantages of precisely controlling the current provided to the organic electroluminescent diode. Further, since the storage capacitor has a multilayer structure and occupies a reduced pixel area, the aperture ratio of the pixel structure can be increased.

Abstract: An OLED pixel driving circuit includes a storage capacitor, a first switching circuit, and a driving element. The storage capacitor has a first node and a second node, where the second node receives Data voltage in a first period, and the first node receives reference voltage in a second period within the first period. The first switching circuit isolates the first node from a fixed voltage source in the first period, and connects the first node to the fixed voltage source to provide a fixed voltage to the first node after the end of the first period. The driving element outputs a driving current independently of the fixed voltage.

Abstract: The method for fabricating a flat panel display includes performing a first crystallization process to re-crystallize an amorphous silicon layer on a glass substrate to make the amorphous silicon layer become a polysilicon layer, forming a patterned absorbing layer to cover an active area pattern of a driving TFT and to expose portions of the polysilicon layer, performing a second crystallization process to re-crystallization the exposed portions of the polysilicon layer so that the exposed portions of the polysilicon layer has a different grain structure from the grain structure of the driving TFT, removing the patterned absorbing layer, and removing portions of the polysilicon layer to form an active area of the driving TFT and an active area of a switching TFT area in the exposed portions of the polysilicon layer of each sub-pixel.

Abstract: An exemplary embodiment of a system comprises an active matrix organic electroluminescent device, having a substrate, and a plurality of scan lines and data lines disposed on the substrate, for defining a plurality of pixel regions. Each pixel structure comprises: a switching thin film transistor, a driving thin film transistor, and a storage capacitor. The switching TFT has a light-shielding layer adapted for preventing the sunlight from being incident into the switching TFT. The driving TFT is a bottom gate thin film transistor and have advantages of precisely controlling the current provided to the organic electroluminescent diode. Further, since the storage capacitor has a multilayer structure and occupies a reduced pixel area, the aperture ratio of the pixel structure can be increased.

Abstract: The invention discloses a system for displaying images comprising an organic electroluminescent device. The organic electroluminescent device comprises a pixel area including a plurality of sub-pixels, a switching TFT having a first silicon layer with a first thickness and a driving TFT having a second silicon layer with a second thickness. Each sub-pixel includes a switching region with a switching TFT thereon and a driving region with a driving TFT thereon. Specifically, a difference between the first thickness and the second thickness at least exceeds 10%. Fabrication methods of the system are also provided.

Abstract: A pixel unit. A first thin film transistor comprises a first control terminal receiving a scan signal, a first electrode receiving a data signal, and a second electrode. A second thin film transistor comprises a second control terminal coupled to the second electrode, a third electrode receiving a first voltage, a fourth electrode, and a fifth electrode coupled to one of the third and the fourth electrodes. A capacitor is coupled between the second control terminal and the third electrode. A light-emitting device is coupled between the fourth electrode and a second voltage.

Abstract: A display device including a substrate, a driving element, a reflective layer and a first auxiliary layer is provided. The substrate has a first area and a second area. The driving element is placed within the first area. The reflective layer is placed above the first area and at least a portion of the second area and coupled to the driving element. The first auxiliary layer is placed on the reflective layer above the first area. The first auxiliary layer improves the electrical characteristic of the reflective layer. A reflectance of the first auxiliary layer is not larger than a reflectance of the reflective layer.

Abstract: An exemplary embodiment of a system comprises an active matrix organic electroluminescent device, having a substrate, and a plurality of scan lines and data lines disposed on the substrate, for defining a plurality of pixel regions. Each pixel structure comprises: a switching thin film transistor, a driving thin film transistor, and a storage capacitor. The switching TFT has a light-shielding layer adapted for preventing the sunlight from being incident into the switching TFT. The driving TFT is a bottom gate thin film transistor and have advantages of precisely controlling the current provided to the organic electroluminescent diode. Further, since the storage capacitor has a multilayer structure and occupies a reduced pixel area, the aperture ratio of the pixel structure can be increased.

Abstract: A system having an electrostatic discharge protection structure and a method for manufacturing the structure are provided. The structure comprises a conducting layer, a material layer and a bridging layer wherein the conducting layer is divided into a first conducting portion and a second conducting portion to form a gap therebetween. The material layer is disposed onto the conducting layer, forming a first via hole to expose a part of the first conducting portion and a second via hole to expose a part of the second conducting portion. Finally, the bridging layer disposed onto the material layer electrically connects the first conducting portion to the second conducting portion within the first and second via holes, whereby the electrostatic produced during the manufacturing process would be prevented from damaging the driver circuits.

Abstract: Organic electroluminescent devices are disclosed. A representative device incorporates a substrate that comprises a control area and a sensitive area. A switch device and a driving device are disposed overlying the control area. A photo sensor is disposed overlying the sensitive area. An OLED element is disposed in the sensitive area and illuminating to the photo sensor. A capacitor is coupled to the photo sensor and the driving device, wherein a photo current corresponding to the brightness of the OLED element is generated in the photo sensor responsive to the OLED element illuminating the photo sensor such that a voltage of the capacitor is adjusted by the photo current to control the current passing through the driving device, thus changing the illumination of the OLED element.

Abstract: A pixel driving circuit array is disclosed, comprising a first capacitor and a second capacitor. The first capacitor comprises a first electrode, an insulator layer and a common electrode. The second capacitor comprises a second electrode, the insulator layer and the common electrode. The first capacitor and the second capacitor share the same common electrode. The first electrode and the second electrode are on the same plane.