Patents by Inventor Chang-Ho Yu

Chang-Ho Yu has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20240420951
    Abstract: A part is adapted to be used in a semiconductor processing equipment. The part includes a substrate and a protective coating. The protective coating covers at least a part of the substrate, is made of silicon carbide, and has an atomic ratio of carbon in the protective coating increases in a direction away from the substrate while an atomic ratio of silicon in the protective coating decreases in the direction. The atomic ratio of silicon in the protective coating is larger than that of the carbon near the substrate, and the atomic ratio of silicon in the protective coating is smaller than that of carbon near the outer surface of the protective coating. A method for making the part is also provided.
    Type: Application
    Filed: August 26, 2024
    Publication date: December 19, 2024
    Inventors: Chang-Ho YU, Yao-Kuang Yang, Ping-Yen Hsieh, Ying-Hung Chen, Chu-Liang Ho
  • Publication number: 20230064070
    Abstract: A part is adapted to be used in a semiconductor processing equipment. The part includes a substrate and a protective coating. The protective coating covers at least a part of the substrate, is made of silicon carbide, and has an atomic ratio of carbon in the protective coating increases in a direction away from the substrate while an atomic ratio of silicon in the protective coating decreases in the direction. The atomic ratio of silicon in the protective coating is larger than that of the carbon near the substrate, and the atomic ratio of silicon in the protective coating is smaller than that of carbon near the outer surface of the protective coating. A method for making the part is also provided.
    Type: Application
    Filed: December 27, 2021
    Publication date: March 2, 2023
    Inventor: Chang-Ho YU
  • Patent number: 10450669
    Abstract: A container for silicon ingot fabrication and a manufacturing method thereof are provided. The method includes the following steps. A base layer made of quartz is provided in a chamber. A powder solution layer is coated over an inner surface of the base layer. The powder solution layer includes silicon nitride or carbon. The base layer having the powder solution layer coated thereon is heated to a temperature of 1000° C. to 1700° C. while a reaction gas is supplied into the chamber for 2 hours to 8 hours to form a barrier layer over the inner surface of the base layer. The barrier layer includes silicon oxynitride represented by SixNyOz, 1?x?2, 1?y?2, and 0.1?z?1. Moreover, a method for manufacturing a crystalline silicon ingot is also provided.
    Type: Grant
    Filed: June 27, 2017
    Date of Patent: October 22, 2019
    Assignee: AUO Crystal Corporation
    Inventors: Chang-Ho Yu, Yen-Ming Chen
  • Publication number: 20180030613
    Abstract: A container for silicon ingot fabrication and a manufacturing method thereof are provided. The method includes the following steps. A base layer made of quartz is provided in a chamber. A powder solution layer is coated over an inner surface of the base layer. The powder solution layer includes silicon nitride or carbon. The base layer having the powder solution layer coated thereon is heated to a temperature of 1000° C. to 1700° C. while a reaction gas is supplied into the chamber for 2 hours to 8 hours to form a barrier layer over the inner surface of the base layer. The barrier layer includes silicon oxynitride represented by SixNyOz, 1?x?2, 1?y?2, and 0.1?z?1. Moreover, a method for manufacturing a crystalline silicon ingot is also provided.
    Type: Application
    Filed: June 27, 2017
    Publication date: February 1, 2018
    Applicant: AUO Crystal Corporation
    Inventors: Chang-Ho Yu, Yen-Ming Chen