Abstract: The present invention provides a metal-plastic composite material having excellent adhesive strength and formability and a method for manufacturing the same, and specifically, the present invention provides a metal-plastic composite material and a method for manufacturing the same comprising: a metal layer; and a plastic layer on at least one surface of the metal layer, wherein a thin film layer formed of a silane coupling agent is provided between the metal layer and the plastic layer, and the metal layer and the plastic layer are bonded by covalent bonding with the silane coupling agent.

Abstract: Disclosed is a method of controlling a server for managing movement schedules of a plurality of robots. The control method includes receiving an occupancy request for at least one node matching a scheduled moving route from at least one of the plurality of robots; setting actually occupied nodes and provisionally occupied nodes of each of the plurality of robots based on the occupancy request; and transmitting occupancy permission information including the set actually occupied node and provisionally occupied node to each of the plurality of robots. In the setting of the actually occupied node and the provisionally occupied node, the actually occupied nodes and the provisionally occupied nodes of each of the plurality of robots are selected so that an actually occupied node of one robot does not overlap an actually occupied node or a provisionally occupied node of another robot.

Abstract: A semiconductor memory device may include a cell substrate; a mold structure including a plurality of gate electrodes stacked on the cell substrate; a channel structure penetrating the mold structure; a string select line on the mold structure; a string select channel structure penetrating the string select line and contacting the channel structure; an anti-arcing contact penetrating the mold structure; an insulating pattern between the anti-arcing contact and the plurality of gate electrodes; and an anti-arcing insulating pattern penetrating the string select line to be in contact with the anti-arcing contact.