Abstract: Microelectronic substrate inspection equipment includes a gas container which contains helium gas, a helium ion generator which is disposed in the gas container and converts the helium gas into helium ions and a wafer stage which is disposed under the gas container and on which a substrate to be inspected is placed. The equipment further includes a secondary electron detector which is disposed above the wafer stage and detects electrons generated from the substrate, a compressor which receives first gaseous nitrogen from a continuous nitrogen supply device and compresses the received first gaseous nitrogen into liquid nitrogen, a liquid nitrogen dewar which is connected to the compressor and stores the liquid nitrogen, and a cooling device that is coupled to the helium ion generator. The cooling device is disposed on the gas container, and cools the helium ion generator by vaporizing the liquid nitrogen. Related methods are also disclosed.

Abstract: A zoneplate includes a first pattern having a first thickness, the first pattern including a first material, and a second pattern adjacent to the first pattern and having a second thickness larger than the first thickness, the second pattern including a second material, incident light incident on the first pattern from the outside passing through the first pattern, and incident light incident on the second pattern from the outside passing through the second pattern.

Abstract: A focusing device for an optical microscope may include a light emitting unit configured to emit laser light having a specific wavelength, a wedge mirror configured to enable the emitted laser light to be incident on a plurality of locations of a surface of a specimen, first and second light receiving units configured to detect an amount of laser light reflected from the surface of the specimen, a spatial filter configured to eliminate out-of-focus light from light beams reflected from the surface of the specimen and to detect an amount of in-focus light, and a control unit configured to generate a control signal used to carry out focus adjustment of the optical microscope using a plurality of light-amount information detected by the first and second light receiving units and the spatial filter.

Abstract: Example embodiments are directed to a scanning electron microscope. The scanning electron microscope includes an electron gun to configured irradiate an electron beam on a sample, and a disc of a transparent material and including a through-hole through which the electron beam passes. The disc includes a scintillator layer formed at a surface thereof so as to generate photons based on the secondary electrons received from the sample. A reflecting layer is formed at an inner peripheral surface of the through-hole so as to reflect the photons, thereby preventing leakage of the photons via the through-hole.

Abstract: An optical measuring apparatus may include a light source, linear polarizer, polarized beam splitter, quarter wave plate, objective lens, and/or light receiver. The polarized beam splitter may be configured to transmit linearly polarized light from the linear polarizer to any one of a first and second optical path. The quarter wave plate may be configured to circularly polarize light transmitted through the first optical path from the polarized beam splitter and transmit the circularly polarized light to an object to be measured, and the quarter wave plate may be configured to linearly polarize the circularly polarized light reflected from the object to be measured and transmit the linearly polarized reflected light to the second optical path of the polarized beam splitter. The objective lens may be configured to generate light having different wavelengths by generating chromatic aberration in the circularly polarized light from the quarter wave plate.

Abstract: Example embodiments are directed to a scanning electron microscope. The scanning electron microscope includes an electron gun to configured irradiate an electron beam on a sample, and a disc of a transparent material and including a through-hole through which the electron beam passes. The disc includes a scintillator layer formed at a surface thereof so as to generate photons based on the secondary electrons received from the sample. A reflecting layer is formed at an inner peripheral surface of the through-hole so as to reflect the photons, thereby preventing leakage of the photons via the through-hole.

Abstract: An apparatus to inspect a TFT substrate including a gate line, a data line crossed with the gate line and insulated from the gate line, a TFT disposed at an intersection of the gate line and the data line, and a pixel electrode connected to the TFT includes a vacuum chamber, a stage disposed in the vacuum chamber and on which the TFT substrate is settled, an electron beam generator disposed over the stage, a gate driving part to apply a gate-on voltage to the gate line to turn on the TFT, a signal detector connected to the data line and to sense an electric signal from the pixel electrode, and a controller to control the gate driving part and the electron beam generator so that a electron beam is irradiated to the pixel electrode while the TFT is turned on.

Abstract: A sample inspection apparatus to inspect a sample using a scanning electron microscope irradiates the sample with electron beams. The sample inspection apparatus includes a charge collecting unit that collects charges generated from a surface of the sample due to irradiation thereof by the electron beams. The cost required for sample inspection is reduced, and an image having high quality is provided by the sample inspection apparatus.

Abstract: An emitter for an electron-beam projection lithography system includes a photoconductor substrate, an insulating layer formed on a front surface of the photoconductor substrate, a gate electrode layer formed on the insulating layer, and a base electrode layer formed on a rear surface of the photoconductor substrate and formed of a transparent conductive material. In operation of the emitter, a voltage is applied between the base electrode and the gate electrode layer, light is projected onto a portion of the photoconductor substrate to convert the portion of the photoconductor substrate into a conductor such that electrons are emitted only from the partial portion where the light is projected. Since the emitter can partially emit electrons, partial correcting, patterning or repairing of a subject electron-resist can be realized.

Abstract: An emitter for an electron-beam projection lithography system includes a photoconductor substrate, an insulating layer formed on a front surface of the photoconductor substrate, a gate electrode layer formed on the insulating layer, and a base electrode layer formed on a rear surface of the photoconductor substrate and formed of a transparent conductive material. In operation of the emitter, a voltage is applied between the base electrode and the gate electrode layer, light is projected onto a portion of the photoconductor substrate to convert the portion of the photoconductor substrate into a conductor such that electrons are emitted only from the partial portion where the light is projected. Since the emitter can partially emit electrons, partial correcting, patterning or repairing of a subject electron-resist can be realized.

Abstract: A method for projecting a predetermined pattern of an electron beam from an emitter to a wafer in a vacuum chamber of an electron-beam lithography system is provided. An initial condition for performing an electromagnetic focusing is first set and outspread phenomenon of the electron beam, which is caused by an initial emitting velocity difference and an initial emitting angle difference between electrons emitted from the emitter, is corrected. Then, a shift of the electron beam, which is caused when an electric field is not in parallel with a magnetic field, is corrected and a shift of the electron beam, which is caused by a gradient of the magnetic field, is corrected, after which an increase of a beam diameter of the electron beam, which is caused by Coulomb-interaction between the electrons emitted from the emitter, is corrected. Then, it is determined if a focusing error is within a range of an allowable error.

Abstract: An apparatus to inspect a TFT substrate including a gate line, a data line crossed with the gate line and insulated from the gate line, a TFT disposed at an intersection of the gate line and the data line, and a pixel electrode connected to the TFT includes a vacuum chamber, a stage disposed in the vacuum chamber and on which the TFT substrate is settled, an electron beam generator disposed over the stage, a gate driving part to apply a gate-on voltage to the gate line to turn on the TFT, a signal detector connected to the data line and to sense an electric signal from the pixel electrode, and a controller to control the gate driving part and the electron beam generator so that a electron beam is irradiated to the pixel electrode while the TFT is turned on.

Abstract: A method for projecting a predetermined pattern of an electron beam from an emitter to a wafer in a vacuum chamber of an electron-beam lithography system is provided. An initial condition for performing an electromagnetic focusing is first set and outspread phenomenon of the electron beam, which is caused by an initial emitting velocity difference and an initial emitting angle difference between electrons emitted from the emitter, is corrected. Then, a shift of the electron beam, which is caused when an electric field is not in parallel with a magnetic field, is corrected and a shift of the electron beam, which is caused by a gradient of the magnetic field, is corrected, after which an increase of a beam diameter of the electron beam, which is caused by Coulomb-interaction between the electrons emitted from the emitter, is corrected. Then, it is determined if a focusing error is within a range of an allowable error.

Abstract: An emitter for an electron-beam projection lithography system includes a photoconductor substrate, an insulating layer formed on a front surface of the photoconductor substrate, a gate electrode layer formed on the insulating layer, and a base electrode layer formed on a rear surface of the photoconductor substrate and formed of a transparent conductive material. In operation of the emitter, a voltage is applied between the base electrode and the gate electrode layer, light is projected onto a portion of the photoconductor substrate to convert the portion of the photoconductor substrate into a conductor such that electrons are emitted only from the partial portion where the light is projected. Since the emitter can partially emit electrons, partial correcting, patterning or repairing of a subject electron-resist can be realized.

Abstract: A fabrication method of metallic nanowires includes the steps of: forming a layer of autocatalytic metal with a thickness of 30 nm-1000 nm on the surface of a substrate; and forming nanowires on the front surface of the layer of autocatalytic metal, wherein the substrate is put into an evaporator and the layer of autocatalytic metal is grown by autocatalytic reaction for 10˜5000 seconds. A large amount of nanowires can be grown on a substrate without a lithography process.

Abstract: A fabrication method of metallic nanowires includes the steps of: forming a layer of autocatalytic metal with a thickness of 30 nm-1000 nm on the surface of a substrate; and forming nanowires on the front surface of the layer of autocatalytic metal, wherein the substrate is put into an evaporator and the layer of autocatalytic metal is grown by autocatalytic reaction for 10˜5000 seconds. A large amount of nanowires can be grown on a substrate without a lithography process.

Abstract: A process chamber for processing a substrate by conducting plasma enhanced chemical vapor deposition or sputtering includes a stage. The stage has a main base member that is constructed to have projections and a recessed portion between the projections, and a substrate mounting member which is constructred to fit between the projections of the main base member and such that the a portion of the substrate mounting member is located within the recessed portion and a portion of the substrate mounting member protrudes from the main base member. The substrate mounting member is easily removed from the main base member while also being reliably fixed and positioned in the main base member by the projections. As a result of this construction, the substrate mounting member can be removed from the process chamber independently of the main base member and in a manner similar to how the substrate is removed after processing.

Abstract: Integrated circuit memory devices include a gate oxide insulating layer on a surface of a semiconductor substrate containing a bulk region of first conductivity type and spaced source and drain regions of second conductivity type therein extending to the surface. First and second separate control gates are also preferably provided in each unit cell and extend opposite the surface. A ferroelectric insulating layer is provided between the first and second control gates and acts as a nonvolatile data storage medium when it is polarized in a predetermined state. A floating gate is also provided having a preferred C-shape when viewed in transverse cross-section. In particular, the floating gate is provided to have a first extension disposed between the first control gate and the first electrically insulating layer and a second extension disposed between the first control gate and the ferroelectric insulating layer.

Abstract: Integrated circuit memory devices include a gate oxide insulating layer on a surface of a semiconductor substrate containing a bulk region of first conductivity type and spaced source and drain regions of second conductivity type therein extending to the surface. First and second separate control gates are also preferably provided in each unit cell and extend opposite the surface. A ferroelectric insulating layer is provided between the first and second control gates and acts as a nonvolatile data storage medium when it is polarized in a predetermined state. A floating gate is also provided having a preferred C-shape when viewed in transverse cross-section. In particular, the floating gate is provided to have a first extension disposed between the first control gate and the first electrically insulating layer and a second extension disposed between the first control gate and the ferroelectric insulating layer.