Abstract: A semiconductor memory device may include a cell substrate; a mold structure including a plurality of gate electrodes stacked on the cell substrate; a channel structure penetrating the mold structure; a string select line on the mold structure; a string select channel structure penetrating the string select line and contacting the channel structure; an anti-arcing contact penetrating the mold structure; an insulating pattern between the anti-arcing contact and the plurality of gate electrodes; and an anti-arcing insulating pattern penetrating the string select line to be in contact with the anti-arcing contact.

Abstract: The invention provides an embedded multilayer chip capacitor, and a printed circuit board having the same. The embedded multilayer chip capacitor has a capacitor body having a plurality of dielectric layers stacked one on another; a plurality of first and second internal electrodes formed inside the capacitor body, separated by the dielectric layers; and first and second vias extended vertically inside the capacitor body. The first via is connected to the first internal electrodes and the second via is connected to the second internal electrodes. The first via is led to a bottom of the capacitor body and the second via is led to a top of the capacitor body.

Abstract: A multi-layer chip capacitor includes a capacitor body; first and second internal electrodes alternately arranged therein and separated by dielectric layers, each of the internal electrodes having at least one opening formed at one or more sides thereof; first and second conductive vias passing through the openings and electrically connected to the first and second internal electrodes, respectively; first and second terminal electrodes of opposite polarities formed on one or more side faces of the capacitor body; and first and second lowermost electrode patterns being coplanar, each pattern including a via contact portion and a lead portion extending therefrom. The first and second lowermost electrode patterns are connected to the first and second terminal electrodes, respectively, through the respective lead portions of the lowermost patterns.

Abstract: The invention provides a multilayer chip capacitor reduced in ESL. A capacitor body has a plurality of dielectric layers stacked in a thickness direction. A plurality of first and second internal electrodes are separated from one another by the dielectric layers within the capacitor body. Each of the first internal electrodes opposes each of the second internal electrodes. Each of the first and second internal electrodes includes at least two leads extending toward any side of the capacitor body. Also, a plurality of external electrodes are formed on an outer surface of the capacitor body and connected to the internal electrodes via the leads. Further, vertically adjacent ones of the leads having the same polarity extend in different directions at a predetermined angle. The leads of the first and second internal electrodes are disposed adjacent to and alternate with those of the second internal electrodes.

Abstract: A multilayered chip capacitor (MLCC) includes internal electrodes and external electrodes formed to be perpendicular to the internal electrodes, whereby parasitic capacitance is reduced, resulting in no parallel resonance frequency effects. In addition, the MLCC has a capacitor structure, which provides a first surface and a second surface formed in a stacking direction of the dielectric layers in the capacitor body as a top surface and a bottom surface. Hence, in the thin capacitors having the same size, the number of internal electrode layers is increased, thereby reducing the equivalent series resistant (ESR) and equivalent series inductance (ESL). Further, the printed circuit board (PCB) having an embedded MLCC is easily manufactured.

Abstract: Disclosed herein is a multilayered chip capacitor array, including a capacitor body having a plurality of dielectric layers, a plurality of pairs of first and second inner electrodes which are formed on the plurality of dielectric layers such that one electrode of one pair of inner electrodes faces the other electrode of the one pair of inner electrodes with one of the plurality of dielectric layers interposed therebetween, at least one first outer terminal and a plurality of second outer terminals formed on at least one surface of a top surface and a bottom surface of the capacitor body, and at least one first conductive via and a plurality of second conductive vias formed in a stacking direction of the capacitor body and connected to the first outer terminal and the second outer terminal, respectively.

Abstract: A multilayer chip capacitor, which reduces ESL generated due to current flowing through external electrodes and assures an improved mechanical strength. The multilayer chip capacitor includes an upper dummy layer and a lower dummy layer; a plurality of internal electrodes interposed between the upper and lower dummy layers; and external electrodes connected to the internal electrodes, wherein the thickness of the lower dummy layer is smaller than the thickness of the upper dummy layer.

Abstract: A laminated ceramic capacitor includes a ceramic block formed by laminating a plurality of ceramic sheets, a plurality of external electrodes formed on outer surfaces of the ceramic block facing each other, and set as a positive terminal and a negative terminal, respectively, one or more first and second internal electrodes alternately arranged within the ceramic block such that electric currents flow in opposite directions in the internal electrodes, and a plurality of withdrawing patterns for connecting the first and second internal electrodes to the external electrodes, respectively.

Abstract: The present invention provides an MLCC and an MLCC array. The MLCC has desirably low ESL properties by forming the first and second internal electrodes to be spaced apart from each other on the same dielectric layer while overlapping with other first and second internal electrodes on the neighboring dielectric layers, and connecting the first and second internal electrodes to the external terminals provided on the top surface or the bottom surface of the capacitor body through conductive via holes formed in the capacitor body in a stacking direction of the capacitor body.

Abstract: A multilayered chip capacitor including a capacitor main body including a plurality of dielectric layers, which are laminated; at least one pair of first and second internal electrodes, each of which is formed on the corresponding one of the plural dielectric layers and includes at least one lead extended to one end of the corresponding dielectric layer; a plurality of external terminals formed on the outer surface of the capacitor main body, and respectively connected to the first and second internal electrodes through the leads; and at least one opened region, formed through the inner area of each of the first and second internal electrodes, for branching the flow of current so as to increase the offset quantity of parasitic inductances between the first and second internal electrodes.