Abstract: According to an embodiment of the present invention, a substrate processing apparatus includes: a chamber in which a process for a substrate is performed; a showerhead installed in the chamber to inject a reaction gas toward the substrate; and a susceptor installed below the showerhead to support the substrate. Here, the showerhead includes: a showerhead main body including an inner space to which the reaction gas is supplied from the outside and a plurality of injection holes configured to inject the reaction gas while communicating with the inner space; an inflow plate installed in the inner space to divide the inner space into an inflow space and a buffer space and including a plurality of inflow holes configured to allow the inflow space and the buffer space to communicate with each other; and a plurality of adjustment plates installed on the inflow holes in a movable manner, respectively, and configured to restrict movement of the reaction gas from the inflow space to the buffer space.

Abstract: According to an embodiment of the present invention, a substrate processing apparatus includes: a chamber in which a process for a substrate is performed; a showerhead installed in the chamber to inject a reaction gas toward the substrate; and a susceptor installed below the showerhead to support the substrate. Here, the showerhead includes: a showerhead main body including an inner space to which the reaction gas is supplied from the outside and a plurality of injection holes configured to inject the reaction gas while communicating with the inner space; an inflow plate installed in the inner space to divide the inner space into an inflow space and a buffer space and including a plurality of inflow holes configured to allow the inflow space and the buffer space to communicate with each other; and a plurality of adjustment plates installed on the inflow holes in a movable manner, respectively, and configured to restrict movement of the reaction gas from the inflow space to the buffer space.

Abstract: Provided is a substrate processing apparatus. The substrate processing apparatus includes a lower chamber having an opened upper side, an upper chamber opening or closing the upper side of the lower chamber, the upper chamber defining an inner space, in which a process is performed on a substrate, together with the lower chamber, a showerhead disposed on a lower portion of the upper chamber to supply a reaction gas toward the inner space, wherein a buffer space is defined between the showerhead and the upper chamber, a partition member disposed in the buffer space to partition the buffer space into a plurality of diffusion regions, and a plurality of gas supply ports disposed in the upper chamber to supply the reaction gas toward each of the diffusion regions.

Abstract: Provided is a substrate processing apparatus. The substrate processing apparatus includes a lower chamber having an opened upper side, an upper chamber opening or closing the upper side of the lower chamber, the upper chamber defining an inner space, in which a process is performed on a substrate, together with the lower chamber, a showerhead disposed on a lower portion of the upper chamber to supply a reaction gas toward the inner space, wherein a buffer space is defined between the showerhead and the upper chamber, a partition member disposed in the buffer space to partition the buffer space into a plurality of diffusion regions, and a plurality of gas supply ports disposed in the upper chamber to supply the reaction gas toward each of the diffusion regions.