Abstract: A method of processing light-emitting elements includes: transferring a plurality of light-emitting elements from original wafers or next-stage carriers, based on a predetermined pattern. The predetermined pattern arranges two adjacent LED groups in a first direction on the original wafer or carriers to be placed on two non-adjacent positions in the first direction on the next-stage carriers. The light-emitting elements on the original wafer have a horizontal wafer pitch and a vertical wafer pitch. The light-emitting elements on each of the next-stage carriers have a first horizontal pitch and a first vertical pitch. The first horizontal pitch is greater than the horizontal wafer pitch, or the first vertical pitch is greater than the vertical wafer pitch. Besides, a light-emitting element device using the aforementioned method is also provided.

Abstract: A key structure includes a key body, a key portion disposed on the key body and installed inside a slot formed on a case of an electronic device in a movable manner, and an actuating portion disposed on the key body and synchronally movable with the key portion. The actuating portion includes two actuators for respectively actuating a corresponding electronic switch of the electronic device.

Abstract: A key structure includes a key body, a key portion disposed on the key body and installed inside a slot formed on a case of an electronic device in a movable manner, and an actuating portion disposed on the key body and synchronally movable with the key portion. The actuating portion includes two actuators for respectively actuating a corresponding electronic switch of the electronic device.

Abstract: A method of forming metal lines is disclosed. The method comprises the steps of: forming a composite metal layer over a wafer, the composite metal layer having a top layer of titanium/titanium nitride; oxidizing the top layer of titanium/titanium nitride to form a layer of titanium oxide; and patterning and etching the composite metal layer to form the metal lines.

Abstract: An alignment mark for increasing the accuracy of an alignment includes a cross pattern, two horizontal line patterns having serrated shape. The cross pattern is typically formed over a scribe line for alignment in semiconductor process. The cross pattern includes a vertical line and a horizontal line. The vertical line is vertical to the scribe line while the horizontal line is parallel to the scribe line. The horizontal patterns which are parallel to the scribe line are respectively connected to one end of the vertical line. The horizontal patterns have serrated patterns which are used to change the shape of a noise signal. The high of the serrated shape pattern is about 3 micro meters while the width of the serrated shape pattern is about 3 micro meters.