Abstract: The present invention relates to a method for detecting a void in a concrete composite member covered with a steel plate using a thermal image, and a method for managing the construction of a concrete composite member covered with a steel plate by applying same. According to the present invention, since the presence of the void is determined based on the steel plate surface temperature measured using the thermal image during the construction of the concrete composite member covered with the steel plate, the void generation may be precisely expected.

Abstract: Provided is a substrate processing apparatus, more particularly, a substrate processing apparatus capable of suppressing an generation of process by-products in a substrate processing process. A substrate processing apparatus includes a chamber part configured to provide an inner space in which a substrate is processed, a gas supply part configured to supply a process gas to the inner space, a substrate support configured to support the substrate, a heating liner provided inside the chamber part to at least partially surround the inner space, and a heating part configured to heat the heating liner.

Abstract: Provided are a substrate processing apparatus and a substrate processing method, which are capable of independently performing processes on a plurality of substrates in a multi-station chamber.

Abstract: Provided are: a peptide for regulating reactivity to a serotonin reuptake inhibitor-based antidepressant; a vector and a pharmaceutical composition for preventing or treating depression, which comprise same; a method for screening for an antidepressant by evaluating the activity of mossy cells; and the like.

Abstract: Provided are: a peptide for regulating reactivity to a serotonin reuptake inhibitor-based antidepressant; a vector and a pharmaceutical composition for preventing or treating depression, which comprise same; a method for screening for an antidepressant by evaluating the activity of mossy cells; and the like.

Abstract: Provided is a method of depositing an insulation layer on a trench in a substrate, in which the trench having an aspect ratio of 5:1 or more is formed, including: an insulation layer deposition step of performing an adsorption step of adsorbing silicon to the substrate by injecting a silicon precursor into the inside of a chamber into which the substrate is loaded, a first purge step of removing the unreacted silicon precursor and reaction byproducts from the inside of the chamber, a reaction step of forming the adsorbed silicon as an insulation layer including silicon by supplying a first reaction source to the inside of the chamber, and a second purge step of removing the unreacted first reaction source and reaction byproducts from the inside of the chamber; and a densification step of forming a plasma atmosphere in the inside of the chamber by applying an radio frequency (RF) power and densifying the insulation layer including silicon by using the plasma atmosphere, wherein a frequency of the RF power is i

Abstract: Provided is a method of depositing an insulation layer on a trench in a substrate, in which the trench having an aspect ratio of 5:1 or more is formed, including: an insulation layer deposition step of performing an adsorption step of adsorbing silicon to the substrate by injecting a silicon precursor into the inside of a chamber into which the substrate is loaded, a first purge step of removing the unreacted silicon precursor and reaction byproducts from the inside of the chamber, a reaction step of forming the adsorbed silicon as an insulation layer including silicon by supplying a first reaction source to the inside of the chamber, and a second purge step of removing the unreacted first reaction source and reaction byproducts from the inside of the chamber; and a densification step of forming a plasma atmosphere in the inside of the chamber by applying an radio frequency (RF) power and densifying the insulation layer including silicon by using the plasma atmosphere, wherein a frequency of the RF power is i

Abstract: A cyclic deposition method for thin film formation includes forming a silicon thin film on an object by injecting a silicon precursor into a chamber in which the object is loaded, depositing silicon on the object, and performing a first purge, removing an unreacted portion of the silicon precursor and reaction by-products from the interior of the chamber, pre-processing a surface of the silicon thin film by forming a plasma atmosphere in the chamber and supplying a first reaction source having a hydrogen atom, and forming the silicon thin film as an insulating film including silicon, by forming the plasma atmosphere in the chamber and supplying a second reaction source having one or more oxygen atoms, one or more nitrogen atoms, or a mixture thereof.

Abstract: A cyclic deposition method for thin film formation includes forming a silicon thin film on an object by injecting a silicon precursor into a chamber in which the object is loaded, depositing silicon on the object, and performing a first purge, removing an unreacted portion of the silicon precursor and reaction by-products from the interior of the chamber, pre-processing a surface of the silicon thin film by forming a plasma atmosphere in the chamber and supplying a first reaction source having a hydrogen atom, and forming the silicon thin film as an insulating film including silicon, by forming the plasma atmosphere in the chamber and supplying a second reaction source having one or more oxygen atoms, one or more nitrogen atoms, or a mixture thereof.

Abstract: There is provided a substrate processing apparatus including: a chamber providing an internal space, in which a substrate is transferred through a passage and a process is performed on the substrate, and having a supply port supplying a gas to the substrate; and a susceptor installed in the internal space and including a heating region heating the substrate and a pre-heating region pre-heating the gas supplied from the supply port.