Abstract: In the case of a gas in which several gases are mixed, a type and concentration of the gas may be incorrectly measured when measured using only an optical band-pass filter. The invention of the present application is directed to providing a technology in which a plurality of broadband band-pass filters having overlapping regions are provided to calculate a magnitude of absorption for each wavelength band for light passing through each broadband band-pass filter, thereby identifying the presence of a gas of interest and the presence of a gas other than the gas of interest.

Abstract: An artificial cornea and an associated manufacturing method are disclosed. The artificial cornea has two sides, each of which has an associated microstructure. In an embodiment, microlines can be provided on an anterior side, and a posterior side can have micropores. Both the geometry of the microstructures and their dimensions can be customized for an individual patient. The geometry of the artificial cornea itself and its dimensions can also be customized as such. In addition, the lifetime of the artificial cornea can be significantly enhanced by adding co-polymer(s) into the hydrogel to strengthen its mechanical properties. Patient recovery can be aided by adding peptides into the artificial cornea surfaces to improve cell growth post-operation.

Abstract: The present disclosure relates to a system and apparatus for monitoring a partial discharge in a switchboard, including a plurality of partial discharge sensors provided in each of a plurality of switchboards to acquire partial discharge data generated in at least one switchboard, and a noise sensor provided in any one of the plurality of switchboards to acquire noise data to be differentiated from the partial discharge data acquired from the at least one partial discharge sensor, and it can be applied to other exemplary embodiments.

Abstract: The semiconductor device includes a substrate, a stack structure including gate patterns and interlayer insulating films that are alternately stacked on the substrate, an insulating pillar extending in a thickness direction of the substrate within the stack structure, a polycrystalline metal oxide film extending along a sidewall of the insulating pillar between the insulating pillar and the stack structure, a liner film having a transition metal between the insulating pillar and the polycrystalline metal oxide film, and a tunnel insulating film, a charge storage film, and a blocking insulating film which are disposed in order between the polycrystalline metal oxide film and the gate patterns.

Abstract: Provided are a three-dimensional semiconductor memory device, a method for manufacturing the same, a method for operating the same, and an electronic system including the same. The three-dimensional semiconductor memory device includes a substrate, a stack structure on the substrate, and vertical channel structures, which are provided in channel holes penetrating the stack structure, wherein each of the vertical channel structures includes a data storage pattern, a vertical channel pattern, a conductive pad, and a vertical semiconductor pattern, wherein the vertical channel pattern includes a first portion contacting the upper surface of the substrate and a second portion provided between the data storage pattern and the vertical semiconductor pattern, and wherein the vertical semiconductor pattern is spaced apart from the substrate with the first portion of the vertical channel pattern therebetween.

Abstract: An electronic apparatus includes an input unit comprising input circuitry configured to receive a natural language input, a communicator comprising communication circuitry configured to perform communication with a plurality of external chatting servers, and a processor configured to analyze a characteristic of the natural language and a characteristic of the user and to identify a chatting server corresponding to the natural language from among the plurality of chatting servers, and to control the communicator to transmit the natural language to the identified chatting server in order to receive a response with respect to the natural language.

Abstract: A method for creating oil-filled porous anodic oxide coatings for stainless steel is disclosed. The coating has anti-corrosion and omniphobic properties to resist both atmospheric conditions, or other conditions with exposure to vapor, and wet conditions, in which the coating is exposed to and/or immersed in liquid. The anodic oxide coating of the present invention can be made by the steps of cleaning and/or electropolishing a steel substrate, applying anodic oxidation to the steel substrate, washing the steel substrate in an organic solvent, and annealing the substrate at high temperature. To fill the porous coating with an oil, a solvent exchange method may be applied.

Abstract: A method for creating oil-filled porous anodic oxide coatings for metallic surfaces is disclosed. The coating has anti-corrosion and omniphobic properties to resist both underwater and atmospheric conditions. To realize oil-impregnated three-dimensional bottle-shaped pores in the oxide layer in anodizing aluminum, the following steps may be taken. First, the target surface may be cleaned and electropolished. Then, a first anodizing step at a lower voltage is applied to create relatively small-diameter pores in the entrance (i.e., top) region of the oxide layer, followed by a second anodizing step at a higher voltage to subsequently create larger-diameter pores in the base (i.e., bottom) region of the oxide layer. Pore widening follows to enlarge the overall pore diameters. To fill the porous coating with an oil, a solvent exchange method may be utilized.

Abstract: An electronic apparatus includes an input unit comprising input circuitry configured to receive a natural language input, a communicator comprising communication circuitry configured to perform communication with a plurality of external chatting servers, and a processor configured to analyze a characteristic of the natural language and a characteristic of the user and to identify a chatting server corresponding to the natural language from among the plurality of chatting servers, and to control the communicator to transmit the natural language to the identified chatting server in order to receive a response with respect to the natural language.

Abstract: Disclosed is a method of manufacturing a three-dimensional semiconductor memory device including a ferroelectric thin film. The method includes forming a mold structure including interlayer dielectric layers and sacrificial layers alternately stacked on a substrate, forming channel holes penetrating the mold structure, forming vertical channel structures inside the channel holes, forming an isolation trench penetrating the mold structure and having a line shape extending in one direction, selectively removing the sacrificial layers exposed by the isolation trench, forming gate electrodes filling a space from which the sacrificial layers are removed, and performing a heat treatment process and a cooling process for the vertical channel structures.

Abstract: Smart membranes (14) are integrated into a small, unmanned surface vessel (20) to enable the efficient, automated cleanup of oil spills. Such a vessel (20) has the potential to provide a low-cost, modular solution for day-to-day oil-spill cleanup operations, especially in confined aquatic areas, such as under piers and in the small spaces between marine vessels and piers. The smart membranes (14) are provided on the surface of a conveyor belt (34) that circulates the membranes (14) through the surrounding body of water (10) for oil collection, as well as through an internal reduction chamber (22) of the vessel (20) for oil release. The smart membranes (14) are adapted to attract and repel oil (12) in response to low-voltage commands applied across the conveyor belt (34), using a process that is repeatable for a number of cycles, offering high efficiency and long durability (FIG. 5).

Abstract: Provided are a three-dimensional semiconductor memory device, a method for manufacturing the same, a method for operating the same, and an electronic system including the same. The three-dimensional semiconductor memory device includes a substrate, a stack structure on the substrate, and vertical channel structures, which are provided in channel holes penetrating the stack structure, wherein each of the vertical channel structures includes a data storage pattern, a vertical channel pattern, a conductive pad, and a vertical semiconductor pattern, wherein the vertical channel pattern includes a first portion contacting the upper surface of the substrate and a second portion provided between the data storage pattern and the vertical semiconductor pattern, and wherein the vertical semiconductor pattern is spaced apart from the substrate with the first portion of the vertical channel pattern therebetween.

Abstract: Disclosed is a method of manufacturing a three-dimensional semiconductor memory device including a ferroelectric thin film. The method includes forming a mold structure including interlayer dielectric layers and sacrificial layers alternately stacked on a substrate, forming channel holes penetrating the mold structure, forming vertical channel structures inside the channel holes, forming an isolation trench penetrating the mold structure and having a line shape extending in one direction, selectively removing the sacrificial layers exposed by the isolation trench, forming gate electrodes filling a space from which the sacrificial layers are removed, and performing a heat treatment process and a cooling process for the vertical channel structures.

Abstract: Provided are a three-dimensional semiconductor memory device, a method for manufacturing the same, a method for operating the same, and an electronic system including the same. The three-dimensional semiconductor memory device includes a substrate, a stack structure on the substrate, and vertical channel structures, which are provided in channel holes penetrating the stack structure, wherein each of the vertical channel structures includes a data storage pattern, a vertical channel pattern, a conductive pad, and a vertical semiconductor pattern, wherein the vertical channel pattern includes a first portion contacting the upper surface of the substrate and a second portion provided between the data storage pattern and the vertical semiconductor pattern, and wherein the vertical semiconductor pattern is spaced apart from the substrate with the first portion of the vertical channel pattern therebetween.

Abstract: Smart membranes (14) are integrated into a small, unmanned surface vessel (20) to enable the efficient, automated cleanup of oil spills. Such a vessel (20) has the potential to provide a low-cost, modular solution for day-to-day oil-spill cleanup operations, especially in confined aquatic areas, such as under piers and in the small spaces between marine vessels and piers. The smart membranes (14) are provided on the surface of a conveyor belt (34) that circulates the membranes (14) through the surrounding body of water (10) for oil collection, as well as through an internal reduction chamber (22) of the vessel (20) for oil release. The smart membranes (14) are adapted to attract and repel oil (12) in response to low-voltage commands applied across the conveyor belt (34), using a process that is repeatable for a number of cycles, offering high efficiency and long durability (FIG. 5).

Abstract: Smart membranes are integrated into a small, unmanned surface vessel to enable the efficient, automated cleanup of oil spills. Such a vessel has the potential to provide a low-cost, modular solution for day-to-day oil-spill cleanup operations, especially in confined aquatic areas (e.g., under piers or in the small spaces between marine vessels and piers). The membranes are provided on the surface of a conveyor belt that circulates the membranes through the surrounding body of water for oil collection, as well as through an internal reduction chamber of the vessel for oil release. The smart membranes are adapted to attract and repel oil in response to low-voltage commands applied across the conveyor belt, using a process that is repeatable for a number of cycles, offering high efficiency and long durability. Segments of the conveyor belt can be electrically isolated from one another to allow disparate electrical potentials to be imposed thereon.

Abstract: A process includes means for depositing an anti-corrosion coating filled with liquid oil on an aluminum substrate. Aluminum is anodized and then treated with a thin hydrophobic sub-coating. The pores created through anodization are then impregnated with liquid oil. Oil penetration is maximized and residual air is minimized by first filling the pores with a filling solution, replacing the filling solution with an exchange fluid, and then replacing the exchange fluid with perfluorinated oil. The oil gives the surface coating anti-wetting properties and self-healing properties, thereby protecting the aluminum substrate underneath from corrosion.

Abstract: Provided are a device for providing a response operation corresponding to a device usage inquiry and a method of controlling the device. The method of controlling a device for providing a response operation corresponding to a device usage inquiry may include: receiving a user input corresponding to the device usage inquiry; classifying the device usage inquiry by analyzing the received user input corresponding to the device usage inquiry; extracting operation scenario information corresponding to a result of the classifying the device usage inquiry; and executing preset response operations of the device based on the operation scenario information, wherein the classifying includes classifying the device usage inquiry by inputting the user input of the device usage inquiry to a learning model that is a pre-generated.

Abstract: Provided are a three-dimensional semiconductor memory device, a method for manufacturing the same, a method for operating the same, and an electronic system including the same. The three-dimensional semiconductor memory device includes a substrate, a stack structure on the substrate, and vertical channel structures, which are provided in channel holes penetrating the stack structure, wherein each of the vertical channel structures includes a data storage pattern, a vertical channel pattern, a conductive pad, and a vertical semiconductor pattern, wherein the vertical channel pattern includes a first portion contacting the upper surface of the substrate and a second portion provided between the data storage pattern and the vertical semiconductor pattern, and wherein the vertical semiconductor pattern is spaced apart from the substrate with the first portion of the vertical channel pattern therebetween.

Abstract: An electronic apparatus includes an input unit comprising input circuitry configured to receive a natural language input, a communicator comprising communication circuitry configured to perform communication with a plurality of external chatting servers, and a processor configured to analyze a characteristic of the natural language and a characteristic of the user and to identify a chatting server corresponding to the natural language from among the plurality of chatting servers, and to control the communicator to transmit the natural language to the identified chatting server in order to receive a response with respect to the natural language.