Patents by Inventor Chang-hyun Jeong
Chang-hyun Jeong has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20240133761Abstract: A battery cell internal pressure measurement apparatus for measuring an internal pressure of at least one battery cell according to an example embodiment of the present disclosure may include a jig housing configured to accommodate the at least one battery cell, and a jig cover coupled to the jig housing and configured to cover the at least one battery cell. The at least one cell groove into which the at least one battery cell is inserted may be formed at a bottom of the jig housing.Type: ApplicationFiled: October 17, 2022Publication date: April 25, 2024Applicant: LG ENERGY SOLUTION, LTD.Inventors: In-Seob HWANG, Kyung-Min LEE, Chang-Hyun HWANG, Bong-Hyun JEONG
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Publication number: 20240125908Abstract: A method for manufacturing a LiDAR device is proposed. The method may include providing a LiDAR module including a laser emitting module and a laser detecting module to a target region. The method may also include adjusting, on the basis of first detecting data obtained from the laser detecting module, a relative position of a detecting optic module with respect to the laser detecting module. The method may further include adjusting, on the basis of image data obtained from at least one image sensor, a relative position of an emitting optic module with respect to the laser emitting module.Type: ApplicationFiled: December 21, 2023Publication date: April 18, 2024Inventors: Chan M LIM, Dong Kyu KIM, Chang Mo JEONG, Hoon Il JEONG, Eunsung KWON, Junhyun JO, Bumsik WON, Suwoo NOH, Sang Shin BAE, Seong Min YUN, Jong Hyun YIM
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Publication number: 20240098382Abstract: An image processing device including: a decision pixel manager for setting a decision area for a defect candidate pixel, and determining a first decision pixel and a second decision pixel, based on first phase information of pixels included in the decision area with respect to a first modulation frequency of a sensing light source among the pixels; a target pixel determiner for calculating a phase difference between the first decision pixel and the second decision pixel, based on second phase information of the pixels with respect to a second modulation frequency of the sensing light source, and determining the defect candidate pixel as a target pixel, corresponding to that the phase difference exceeds a predetermined reference value; and a phase corrector for changing a phase of the target pixel, based on the phase difference.Type: ApplicationFiled: February 28, 2023Publication date: March 21, 2024Applicant: SK hynix Inc.Inventors: Woo Young JEONG, Ja Min KOO, Tae Hyun KIM, Jae Hwan JEON, Chang Hun CHO
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Publication number: 20080315188Abstract: In a thin film depositing apparatus, a first reaction gas, a second reaction gas, and a non-volatile gas are supplied to a reaction chamber in order to form a protective layer, in which an organic layer and an inorganic layer are alternately stacked, on a process substrate. The first reaction gas is supplied to the reaction chamber only while the inorganic layer is formed on the process substrate, and the second reaction gas and the non-volatile gas are supplied to the reaction chamber through while the inorganic and organic layers are formed on the process substrate. Thus, the discontinuous surfaces may be prevented from being formed between the organic layer and the inorganic layer, thereby preventing the peeling of the organic and inorganic layers and increasing light transmittance.Type: ApplicationFiled: December 3, 2007Publication date: December 25, 2008Inventors: Tae-Hyung Hwang, Geun-Young Yeom, Chang-Hyun Jeong, June-Hee Lee
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Patent number: 7012012Abstract: Thinning and dicing substrates using inductively coupled plasma reactive ion etching (ICP RIE). When dicing, a hard photo-resist pattern or metal mask pattern that defines scribe lines is formed on a sapphire substrate or on a semiconductor epitaxial layer, beneficially by lithographic techniques. Then, the substrate is etched along the scribe lines to form etched channels. An etching gas comprised of BCl3 and/or BCl3/Cl2 gas is used (optionally, Ar can be added). Stress lines are then produced through the substrate along the etched channels. The substrate is then diced along the stress lines. When thinning, a surface of a substrate is subjected to inductively coupled plasma reactive ion etching (ICP RIE) using BCl3 and/or BCl3/Cl2 gas, possibly with some Ar. ICP RIE is particularly useful when working sapphire and other hard substrates.Type: GrantFiled: August 30, 2004Date of Patent: March 14, 2006Assignee: LG Electronics Inc.Inventors: Geun-young Yeom, Myung cheol Yoo, Wolfram Urbanek, Youn-joon Sung, Chang-hyun Jeong, Kyong-nam Kim, Dong-woo Kim
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Publication number: 20050026396Abstract: Thinning and dicing substrates using inductively coupled plasma reactive ion etching (ICP RIE). When dicing, a hard photo-resist pattern or metal mask pattern that defines scribe lines is formed on a sapphire substrate or on a semiconductor epitaxial layer, beneficially by lithographic techniques. Then, the substrate is etched along the scribe lines to form etched channels. An etching gas comprised of BCl3 and/or BCl3/Cl2 gas is used (optionally, Ar can be added). Stress lines are then produced through the substrate along the etched channels. The substrate is then diced along the stress lines. When thinning, a surface of a substrate is subjected to inductively coupled plasma reactive ion etching (ICP RIE) using BCl3 and/or BCl3/Cl2 gas, possibly with some Ar. ICP RIE is particularly useful when working sapphire and other hard substrates.Type: ApplicationFiled: August 30, 2004Publication date: February 3, 2005Inventors: Geun-young Yeom, Myung Yoo, Wolfram Urbanek, Youn-joon Sung, Chang-hyun Jeong, Kyoung-nam Kim, Dong-woo Kim
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Patent number: 6818532Abstract: Thinning and dicing substrates using inductively coupled plasma reactive ion etching (ICP RIE). When dicing, a hard photo-resist pattern or metal mask pattern that defines scribe lines is formed on a sapphire substrate or on a semiconductor epitaxial layer, beneficially by lithographic techniques. Then, the substrate is etched along the scribe lines to form etched channels. An etching gas comprised of BCl3 and/or BCl3/Cl2 gas is used (optionally, Ar can be added). Stress lines are then produced through the substrate along the etched channels. The substrate is then diced along the stress lines. When thinning, a surface of a substrate is subjected to inductively coupled plasma reactive ion etching (ICP RIE) using BCl3 and/or BCl3/Cl2 gas, possibly with some Ar. ICP RIE is particularly useful when working sapphire and other hard substrates.Type: GrantFiled: April 9, 2002Date of Patent: November 16, 2004Assignee: Oriol, Inc.Inventors: Geun-young Yeom, Myung cheol Yoo, Wolfram Urbanek, Youn-joon Sung, Chang-hyun Jeong, Kyong-nam Kim, Dong-woo Kim
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Publication number: 20030190770Abstract: Thinning and dicing substrates using inductively coupled plasma reactive ion etching (ICP RIE). When dicing, a hard photo-resist pattern or metal mask pattern that defines scribe lines is formed on a sapphire substrate or on a semiconductor epitaxial layer, beneficially by lithographic techniques. Then, the substrate is etched along the scribe lines to form etched channels. An etching gas comprised of BCl3 and/or BCl3/Cl2 gas is used (optionally, Ar can be added). Stress lines are then produced through the substrate along the etched channels. The substrate is then diced along the stress lines. When thinning, a surface of a substrate is subjected to inductively coupled plasma reactive ion etching (ICP RIE) using BCl3 and/or BCl3/Cl2 gas, possibly with some Ar. ICP RIE is particularly useful when working sapphire and other hard substrates.Type: ApplicationFiled: April 9, 2002Publication date: October 9, 2003Applicant: Oriol, Inc.Inventors: Geun-young Yeom, Myung cheol Yoo, Wolfram Urbanek, Youn-joon Sung, Chang-hyun Jeong, Kyong-nam Kim, Dong-woo Kim