Patents by Inventor Chang-Hyun Ko

Chang-Hyun Ko has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 8431762
    Abstract: The present invention relates to a hybrid process comprising an adsorption process and a distillation process for the separation of butene-1 from a C4 hydrocarbon mixture gas including butene-1, trans-2-butene, cis-2-butene, normal butane, isobutane, etc. The above hybrid process comprises introducing a gaseous C4 mixture into the adsorption tower loaded with adsorbents which adsorb olefins selectively to discharge C4 paraffins to the outlet of the tower, desorbing C4 olefins selectively adsorbed in the adsorption tower to produce high purity C4 olefins mixture gas in which isobutane and normal butane was removed, and separating the high C4 olefins mixture gas (a mixture of butene-1, trans-2-butene, cis-2-butene, and a trace amount of C4 paraffins) via distillation to obtain high purity butene-1 including a trace amount of isobutane in the top of the distillation tower and obtain a mixture gas including trans-2-butene, cis-2-butene and a trace amount of normal butane in the bottom of the tower.
    Type: Grant
    Filed: April 11, 2008
    Date of Patent: April 30, 2013
    Assignees: Korea Institute of Energy Research, SK Energy Co., Ltd
    Inventors: Jong-Ho Park, Jong-Nam Kim, Seong-Jun Lee, Min-Su Ko, Hee Tae Beum, Jongkee Park, Chang Hyun Ko, Sang Sup Han, Soon-Haeng Cho
  • Patent number: 8377205
    Abstract: The present disclosure relates to an apparatus for producing silicon nanocrystals, which can minimize plasma diffusion by finely adjusting a plasma region created by an ICP coil. The apparatus includes a reactor having an ICP coil wound around an outer wall thereof and a tube inserted into the reactor, wherein a primary gas for forming silicon nanocrystals and a secondary gas for surface reaction of the silicon nanocrystals are separately supplied to the reactor through an inner side and an outer side of the tube, respectively.
    Type: Grant
    Filed: October 26, 2009
    Date of Patent: February 19, 2013
    Assignee: Korea Institute of Energy Research
    Inventors: Bo-Yun Jang, Chang-Hyun Ko, Jeong-Chul Lee, Joon-Soo Kim, Joo-Seok Park
  • Publication number: 20120329889
    Abstract: The present invention relates to a method of manufacturing a cobalt metal foam catalyst including a metal foam coated with cobalt catalyst powder, a cobalt metal foam catalyst manufactured by the method, a thermal medium-circulated heat exchanger type reactor using the cobalt metal foam catalyst, and a method of producing liquid fuel by Fischer-Tropsch synthesis using the reactor. An object of the present invention is to provide a catalyst, which is used to obtain high liquid fuel productivity even at a low CO conversion ratio because the reaction temperature can be kept stable by controlling reaction heat with high efficiency in Fischer-Tropsch synthesis so that the mass transfer characteristics of a catalyst layer can be improved, and a method of manufacturing the catalyst, a reactor filled with the catalyst, and a method of producing liquid fuel using the reactor.
    Type: Application
    Filed: February 25, 2010
    Publication date: December 27, 2012
    Applicant: KOREA INSTITUTE OF ENERGY RESEARCH
    Inventors: Jung-Il Yang, Jung-Hoon Yang, Chang-Hyun Ko, Heon Jung, Ho-Tae Lee, Hak-Joo Kim, Dong-Hyun Chun
  • Publication number: 20120253091
    Abstract: The present invention relates to a method in which a catalytic reaction is used in order to produce hydrocarbons from renewable starting material derived from biological organisms such as vegetable lipids, animal lipids, and lipids extracted from macroalgae and microalgae, and more specifically relates to a method for selectively making a hydrocarbon, which is suitable for making gasoline or diesel, by removing the oxygen contained in the starting material without consuming hydrogen. In the present invention, the production takes place by bringing the starting material into contact with hydrotalcite, which constitutes a catalyst, thereby removing oxygen via a decarboxylation or decarbonylation reaction; and the starting material is one or more such material selected from triglycerides, fatty acids, and fatty acid derivatives obtained from a renewable source of supply originating from a biological organism.
    Type: Application
    Filed: November 17, 2010
    Publication date: October 4, 2012
    Inventors: Chang-Hyun Ko, Jeong-Geol Na, Jong-Nam Kim, Kwang-Bok Yi, Sung-Youl Park, Jong-Ho Park, Hee-Tae Beum, Bo-Eun Yi
  • Publication number: 20120240764
    Abstract: An apparatus for separating carbon dioxide is provided. The apparatus includes: an absorption column in which carbon dioxide in off-gas is allowed to react with an absorbent solution so as to strip the carbon dioxide from the off-gas; a regeneration column in which the carbon dioxide is removed from the absorbent solution to regenerate the absorbent solution; and an ion-exchange column including a chamber having a cathode chamber space that receives the absorbent solution from the absorption column and an anode chamber space that receives the absorbent solution from the regeneration column, the ion-exchange column further including a permeable membrane that divides the chamber into the cathode chamber space and the anode chamber space.
    Type: Application
    Filed: May 25, 2010
    Publication date: September 27, 2012
    Applicant: KOREA INSTITUTE OF ENERGY RESEARCH
    Inventors: Jong Nam Kim, Kwang Bok Yi, Chang Hyun Ko, Jong Ho Park, Jeong Geol Na
  • Publication number: 20120110902
    Abstract: A sulfur compound adsorbent for solvent extraction of coal and methods using the same to adsorb sulfur compounds and refine coal are provided. The adsorbent for solvent extraction of coal serves to remove sulfur compounds from an organic solvent containing a coal's combustible component resulting from solvent extraction of low-grade coal and is composed of any one or a mixture of two or more selected from among alkali earth metal oxide, alkali earth metal hydroxide, aluminum oxide and activated carbon.
    Type: Application
    Filed: November 18, 2009
    Publication date: May 10, 2012
    Applicant: KOREA INSTITUTE OF ENERGY RESEARCH
    Inventors: Kwang Bok Yi, Jong Nam Kim, Si Hyun Lee, Chang Hyun Ko, Hee Tae Beum, In Baek Kim
  • Publication number: 20100203334
    Abstract: The present disclosure relates to an apparatus for producing silicon nanocrystals, which can minimize plasma diffusion by finely adjusting a plasma region created by an ICP coil. The apparatus includes a reactor having an ICP coil wound around an outer wall thereof and a tube inserted into the reactor, wherein a primary gas for forming silicon nanocrystals and a secondary gas for surface reaction of the silicon nanocrystals are separately supplied to the reactor through an inner side and an outer side of the tube, respectively.
    Type: Application
    Filed: October 26, 2009
    Publication date: August 12, 2010
    Inventors: Bo-Yun JANG, Chang-Hyun Ko, Jeong-Chul Lee, Joon-Soo Kim, Joo-Seok Park
  • Publication number: 20100116639
    Abstract: The present invention relates to a hybrid process comprising an adsorption process and a distillation process for the separation of butene-1 from a C4 hydrocarbon mixture gas including butene-1, trans-2-butene, cis-2-butene, normal butane, isobutane, etc. The above hybrid process comprises introducing a gaseous C4 mixture into the adsorption tower loaded with adsorbents which adsorb olefins selectively to discharge C4 paraffins to the outlet of the tower, desorbing C4 olefins selectively adsorbed in the adsorption tower to produce high purity C4 olefins mixture gas in which isobutane and normal butane was removed, and separating the high C4 olefins mixture gas (a mixture of butene-1, trans-2-butene, cis-2-butene, and a trace amount of C4 paraffins) via distillation to obtain high purity butene-1 including a trace amount of isobutane in the top of the distillation tower and obtain a mixture gas including trans-2-butene, cis-2-butene and a trace amount of normal butane in the bottom of the tower.
    Type: Application
    Filed: April 11, 2008
    Publication date: May 13, 2010
    Applicants: KOREA INSTITUTE OF ENERGY RESEARCH, SK ENERGY CO., LTD.
    Inventors: Jong-Ho Park, Jong-Nam Kim, Seong-Jun Lee, Min-Su Ko, Hee Tae Beum, Jongkee Park, Chang Hyun Ko, Sang Sup Han, Soon-Haeng Cho
  • Publication number: 20100048971
    Abstract: The present invention relates to a method and an apparatus for the separation of C4 olefins (butene-1, trans-2-butene, cis-2-butene, etc.) and C4 paraffins (normal butane, isobutane, etc.) from a C4 hydrocarbon mixed gas including butene-1, trans-2-butene, cis-2-butene, normal butane, isobutane, etc. The method of the present invention produces C4 olefins with high purity by introducing a gaseous C4 mixture into the adsorption tower loaded with adsorbent selectively adsorbing olefins to adsorb C4 olefins and to discharge C4 paraffins to the outlet of the tower, desorbing C4 olefins adsorbed on the adsorption tower with a desorbent (C5 hydrocarbon, C6 hydrocarbon, etc.), and then separating the C4 olefin and the desorbent by a distillation process.
    Type: Application
    Filed: March 28, 2008
    Publication date: February 25, 2010
    Applicants: KOREA INSTITUTE OF ENERGY RESEARCH, SK ENERGY CO., LTD.
    Inventors: Jong-Nam Kim, Jong-Ho Park, Seong-Jun Lee, Min-Su Ko, Hee Tae Beum, Jongkee Park, Chang Hyun Ko, Sang Sup Han, Soon-Haeng Cho
  • Patent number: 7153362
    Abstract: A system and method for real time deposition process control based on resulting product detection, where the system and method detect an amount of at least one reaction product in real time, while the deposition process is being performed, the detected amount of reaction product is compared with a reference amount, and a comparison result is fed back in real time to adjust a supply of one or more reactants. The system and method provide real time control over the deposition process and/or reduce the number of wafers produced that do not meet processing target values.
    Type: Grant
    Filed: April 30, 2002
    Date of Patent: December 26, 2006
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Chang-Hyun Ko, Jai-Dong Lee, Jin-Hee Lee
  • Patent number: 7007933
    Abstract: A method for supplying a source gas to a processing chamber for forming a film on a substrate in the processing chamber includes: heating a carrier gas; bubbling the heated carrier gas in a liquid source disposed in a container to form a vapor source; and supplying a source gas including the vapor source and the heated carrier gas into the processing chamber for forming the film.
    Type: Grant
    Filed: May 8, 2003
    Date of Patent: March 7, 2006
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Jai-Dong Lee, Ki-Hyun Hwang, Chang-Hyun Ko
  • Patent number: 7005389
    Abstract: Methods for forming a thin film on an integrated circuit device including providing energy to reactants in a deposition chamber to activate the reactants. The activated reactants are then deposited on the substrate to form a thin film on the substrate. The reactants selected may be selectively activated so that different thin films are formed in a single chamber thereby reducing processing time.
    Type: Grant
    Filed: March 31, 2004
    Date of Patent: February 28, 2006
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Chang-Hyun Ko, Ki-Hyun Hwang, Hyo-Jung Kim
  • Publication number: 20050032372
    Abstract: Methods for forming a thin film on an integrated circuit device including providing energy to reactants in a deposition chamber to activate the reactants. The activated reactants are then deposited on the substrate to form a thin film on the substrate. The reactants selected may be selectively activated so that different thin films are formed in a single chamber thereby reducing processing time.
    Type: Application
    Filed: March 31, 2004
    Publication date: February 10, 2005
    Inventors: Chang-Hyun Ko, Ki-Hyun Hwang, Hyo-Jung Kim
  • Patent number: 6797561
    Abstract: A method of fabricating a capacitor of a semiconductor device, includes forming a lower electrode on a semiconductor substrate, sequentially forming an aluminum oxide layer and a titanium oxide layer on the lower electrode, and forming an upper electrode on the titanium oxide layer, wherein the upper electrode crosses over the lower electrode. The titanium oxide layer is formed to have a thickness in a range of from about 2 Å to about 50 Å, and the upper electrode is formed at a temperature in a range of from about 150° C. to about 630° C. The temperature at which the upper electrode is formed is decreased as the thickness of the titanium oxide layer is increased to produce a capacitor of a semiconductor device having a minimized leakage current characteristic.
    Type: Grant
    Filed: April 4, 2003
    Date of Patent: September 28, 2004
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Chang Hyun Ko, Young Sub You, Jai Dong Lee, Ki Hyun Hwang
  • Publication number: 20040041286
    Abstract: A method for supplying a source gas to a processing chamber for forming a film on a substrate in the processing chamber includes: heating a carrier gas; bubbling the heated carrier gas in a liquid source disposed in a container to form a vapor source; and supplying a source gas including the vapor source and the heated carrier gas into the processing chamber for forming the film.
    Type: Application
    Filed: May 8, 2003
    Publication date: March 4, 2004
    Inventors: Jai-Dong Lee, Ki-Hyun Hwang, Chang-Hyun Ko
  • Publication number: 20030200924
    Abstract: A system and method for real time deposition process control based on resulting product detection, where the system and method detect an amount of at least one reaction product in real time, while the deposition process is being performed, the detected amount of reaction product is compared with a reference amount, and a comparison result is fed back in real time to adjust a supply of one or more reactants. The system and method provide real time control over the deposition process and/or reduce the number of wafers produced that do not meet processing target values.
    Type: Application
    Filed: April 30, 2002
    Publication date: October 30, 2003
    Inventors: Chang-Hyun Ko, Jai-Dong Lee, Jin-Hee Lee
  • Publication number: 20030190782
    Abstract: A method of fabricating a capacitor of a semiconductor device, includes forming a lower electrode on a semiconductor substrate, sequentially forming an aluminum oxide layer and a titanium oxide layer on the lower electrode, and forming an upper electrode on the titanium oxide layer, wherein the upper electrode crosses over the lower electrode. The titanium oxide layer is formed to have a thickness in a range of from about 2 Å to about 50 Å, and the upper electrode is formed at a temperature in a range of from about 150° C. to about 630° C. The temperature at which the upper electrode is formed is decreased as the thickness of the titanium oxide layer is increased to produce a capacitor of a semiconductor device having a minimized leakage current characteristic.
    Type: Application
    Filed: April 4, 2003
    Publication date: October 9, 2003
    Inventors: Chang Hyun Ko, Young Sub You, Jai Dong Lee, Ki Hyun Hwang
  • Patent number: 6585948
    Abstract: Disclosed is a carbon molecular sieve material. It is prepared by a method comprising the step of adsorbing a mixture of an aqueous carbohydrate solution and an acid or a polymer precursor into pores of an inorganic molecular sieve material; drying and polymerizing the adsorbates; re-adsorbing a mixture of an aqueous carbohydrate solution and an acid or a polymer precursor onto the resultant mixture obtained in the previous steps, and drying and polymerizing the adsorbates; carbonizing the adsorbates through thermal decomposition; and removing the framework of the inorganic molecular sieve from the carbonized adsorbates by use of a fluoric acid or a sodium hydroxide solution. With uniformity in pore size and regularity in structure, the carbon molecular sieve is suitable for use in catalysts, adsorbents, supports, sensors, electrodes, etc.
    Type: Grant
    Filed: July 27, 2000
    Date of Patent: July 1, 2003
    Assignee: Korea Advanced Institute of Science
    Inventors: Ryong Ryoo, Shinae Jun, Sang Hoon Joo, Chang Hyun Ko